The information in this document is subject to change without notice.
SILICON TRANSISTOR
2SC4954
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
·
Low Noise, High Gain
·
Low Voltage Operation
·
Low Feedback Capacitance
C
re
= 0.3 pF TYP.
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC4954-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side of the
tape.
2SC4954-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to perforation
side of the tape.
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
10
mA
Total Power Dissipation
P
T
60
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
65 to +150
°C
©
1993
DATA SHEET
Caution; Electrostatic Sensitive Device.
2.9±0.2
0.95
0.95
0.4
0.05
+0.1
1.5
0.4
0.05
+0.1
2.8±0.2
0.65
0.15
+0.1
3
2
1
0.16
0.06
+0.1
0 to 0.1
1.1 to 1.4
0.3
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
Document No. P10376EJ2V0DS00 (2nd edition)
(Previous No. TD-2405)
Date Published July 1995 P
Printed in Japan
2
2SC4954
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
I
CBO
0.1
µ
A
V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current
I
EBO
0.1
µ
A
V
EB
= 1 V, I
C
= 0
DC Current Gain
h
FE
75
150
V
CE
= 3 V, I
C
= 5 mA*
1
Gain Bandwidth Product
f
T
12
GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2.0 GHz
Feed-back Capacitance
C
re
0.3
0.5
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz*
2
Insertion Power Gain
|S
21e
|
2
7
8.5
dB
V
CE
= 3 V, I
C
= 5 mA, f = 2.0 GHz
Noise Figure
NF
2.5
4.0
dB
V
CE
= 3 V, I
C
= 3 mA, f = 2.0 GHz
*1
Pulse Measurement; PW
350
µ
s, Duty Cycle
2 % Pulsed.
*2
Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
FE
Classification
Rank
T82
Marking
T82
h
FE
75 to 150
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
T
A
Ambient Temperature °C
P
T
Total Power Dissipation mW
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
Base to Emitter Voltage V
I
C
Collector Current mA
50
200
100
0
50
100
150
60 mW
40
30
20
10
0
0.5
1
V
CE
= 3 V
Free Air
3
2SC4954
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
Collector to Emitter Voltage V
I
C
Collector Current mA
40
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
Collector Current mA
h
FE
DC Current Gain
200
0.1
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
I
C
Collector Current mA
f
T
Gain Bandwidth Product GHz
14
0.5
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
I
C
Collector Current mA
|S
21e
|
2
Insertion Power Gain dB
10
0.5
30
20
10
0
2
4
6
500 A
400 A
300 A
200 A
100
0
0.5 1
5
10
50 100
5 V
V
CE
= 3 V
12
10
8
6
4
2
1
2
5
10
20
5 V
3 V
V
CE
= 1 V
8
6
4
2
1
5
10
50
5 V
3 V
V
CE
= 1 V
µ
µ
µ
µ
f = 2 GHz
f = 2 GHz
100 A
µ
I
B
=
NOISE FIGURE vs.
COLLECTOR CURRENT
I
C
Collector Current mA
NF Noise Figure dB
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
Collector to Base Voltage V
C
re
Feed-back Capacitance pF
0.5
5
0.4
0.3
0.2
0.1
0
0.5
20
1
2
5
10
4
3
2
1
0
0.5
20
1
2
5
10
f = 2 GHz
V
CE
= 3 V
f = 1 MHz
4
2SC4954
S-PARAMETER
(V
CE
= 3 V, I
C
= 1 mA, Z
O
= 50
)
f
S
11
S
21
S
12
S
22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
0.9550
9.0
3.2340
168.1
0.0340
77.3
0.9870
6.8
0.400
0.9140
17.3
3.0460
154.7
0.0650
76.7
0.9640
13.4
0.600
0.8630
25.8
2.9630
144.2
0.0930
71.6
0.9250
19.5
0.800
0.7880
33.1
2.7870
133.1
0.1180
66.7
0.8850
24.3
1.000
0.7320
39.1
2.6480
123.5
0.1360
63.7
0.8330
28.9
1.200
0.6720
45.2
2.5390
114.4
0.1570
57.2
0.7820
33.2
1.400
0.5910
50.5
2.3460
106.8
0.1780
56.3
0.7570
37.1
1.600
0.5430
55.0
2.2000
99.0
0.1870
51.7
0.7250
40.1
1.800
0.4830
57.4
2.0710
91.6
0.2030
51.3
0.6720
43.2
2.000
0.4240
60.7
1.9590
85.7
0.2090
50.4
0.6490
46.1
2.200
0.3710
66.9
1.8970
79.8
0.2240
50.9
0.6230
49.1
2.400
0.3390
68.0
1.8100
74.8
0.2440
47.8
0.5970
49.4
2.600
0.3030
71.3
1.6980
70.2
0.2530
47.7
0.5740
54.1
2.800
0.2460
72.2
1.6530
64.7
0.2550
44.5
0.5610
56.8
3.000
0.1990
68.9
1.5750
59.9
0.2830
43.0
0.5130
61.6
(V
CE
= 3 V, I
C
= 3 mA, Z
O
= 50
)
f
S
11
S
21
S
12
S
22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
0.8730
15.0
7.3980
159.5
0.0340
74.6
0.9590
11.1
0.400
0.7600
26.2
6.3600
140.6
0.0580
71.3
0.8830
18.9
0.600
0.6530
35.6
5.5680
127.0
0.0840
69.6
0.7970
25.7
0.800
0.6530
35.6
5.5680
127.0
0.0840
69.6
0.7970
25.7
1.000
0.4750
45.3
4.1940
105.8
0.1160
64.0
0.6690
32.7
1.200
0.4110
48.3
3.7680
98.0
0.1330
64.0
0.6690
32.7
1.400
0.3470
49.3
3.3170
91.8
0.1510
61.9
0.6060
36.3
1.600
0.3190
50.4
3.0080
85.7
0.1600
62.5
0.5720
37.6
1.800
0.2830
46.5
2.7180
79.4
0.1820
58.0
0.5510
39.9
2.000
0.2510
45.6
2.5040
74.9
0.1980
57.5
0.5290
41.8
2.200
0.2020
48.2
2.3810
70.4
0.2150
56.6
0.5170
44.1
2.400
0.1940
47.4
2.2280
66.0
0.2290
53.2
0.5070
45.2
2.600
0.1850
47.8
2.0580
62.7
0.2310
56.3
0.4920
49.6
2.800
0.1710
39.0
1.9740
57.8
0.2620
54.7
0.4670
51.7
3.000
0.1430
31.7
1.8480
54.4
0.2940
53.6
0.4160
54.9
5
2SC4954
S-PARAMETER
(V
CE
= 3 V, I
C
= 5 mA, Z
O
= 50
)
f
S
11
S
21
S
12
S
22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
.775
19.9
10.233
153.0
.029
78.0
.931
14.1
0.400
.653
32.4
8.408
133.2
.056
66.1
.815
23.3
0.600
.527
39.8
6.761
119.0
.073
70.0
.717
27.3
0.800
.447
45.7
5.598
108.5
.088
67.6
.639
30.3
1.000
.359
49.6
4.670
100.0
.111
66.9
.595
31.2
1.200
.314
50.3
4.118
92.7
.123
67.5
.565
32.4
1.400
.279
48.1
3.630
87.1
.140
66.8
.545
34.4
1.600
.246
46.9
3.246
82.1
.154
64.1
.519
35.9
1.800
.219
46.8
2.885
78.1
.178
62.0
.521
37.0
2.000
.178
43.6
2.747
73.7
.194
62.9
.500
38.9
2.200
.165
44.7
2.581
68.8
.201
62.0
.478
43.1
2.400
.149
37.6
2.382
64.8
.224
60.1
.455
43.1
2.600
.137
50.0
2.244
61.4
.241
60.9
.471
43.9
2.800
.132
47.6
2.138
59.0
.253
57.7
.449
47.9
3.000
.103
33.7
2.044
55.3
.265
55.3
.438
47.0
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