©
1984
DATA SHEET
SILICON TRANSISTOR
2SC4182
DESCRIPTION
The 2SC4182 is designed for use as an oscillator or a mixer in a VHF
TV tuners. Super mini mold package makes it suitable for use in small
type equipments especially recommended for Hibrid Integrated Circuits
and other applications.
FEATURES
·
High Gain Bandwidth Product
: f
T
= 1.1 GHz TYP.
·
Low Collector to Base Time Constant : C
C
·
r
b'b
= 9 ps TYP.
·
Low Output Capacitance
: C
ob
= 1.5 pF MAX.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Collector to Base Voltage
V
CB0
30
V
Collector to Emitter Voltage
V
CE0
15
V
Emitter to Base Voltage
V
EB0
4.5
V
Collector Current
I
C
50
mA
Total Power Dissipation
P
T
160
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
65 to +150
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
Characteristics
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Collector Cutoff Current
I
CB0
0.1
µ
A
V
CB
= 20 V, I
E
= 0
DC Current Gain
h
FE
60
220
V
CE
= 3 V, I
C
= 5 mA
Collector Saturation Voltage
V
CE(sat)
0.5
V
I
C
= 10 mA, I
B
= 1 mA
Gain Bandwidth Product
f
T
1 100
MHz
V
CE
= 3 V, I
C
= 5 mA
Output Capacitance
C
ob
1.1
1.5
pF
V
CB
= 3 V, I
E
= 0
Collector to Base Time Constant
C
C
·
r
b'b
9
15
ps
V
CE
= 3 V, I
E
= 5 mA, f = 31.9 MHz
h
FE
Classifications
Rank
T32
T33
T34
Marking
T32
T33
T34
h
FE
60 to 105
85 to 150
120 to 220
Document No. P10407EJ4V0DS00 (4th edition)
(Previous No. TC-1430A)
Date Published February 1996 P
Printed in Japan
UHF/VHF OSCILLATOR AND VHF MIXER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
1
3
2.0 ± 0.2
0.3
+0.1
0
0.65
0.65
0.3
+0.1
0
0.15
+0.1
0.05
0 to 0.1
0.3
0.9 ± 0.1
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
2SC4182
2
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
T
A
- Ambient Temperature - °C
P
T
- Total Power Dissipation - mW
Free Air
200
150
100
50
0
50
100
150
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
24
20
16
12
8
4
0
5
10
15
20
25
30
200 A
180 A
160 A
140 A
120 A
100 A
50 A
80 A
40 A
IB = 20 A
I
C
- Collector Current - mA
0.1
100
V
CB
- Collector to Base Voltage - V
0.3
1
30
200
10
5
2
h
FE
- DC Current Gain
C
ob
- Output Capacitance - pF
0.2
0.5 1.0 2.0
10 20
50
100
20
10
50
V
CE
= 3 V
V
CE
= 10 V
f = 1.0 MHz
3
10
1.0
0.5
0.2
0.1
GAIN BANDWIDTH PRODUCT vs.
EMITTER CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
I
C
- Collector Current - mA
20
3
12
10
8
6
4
2
f
T
- Gain Bandwidth Product - MHz
S
21e
2
- Insertion Gain - dB
1
2
5
10
I
C
- Collector Current - mA
1
20
2
10
V
CE
= 3 V
V
CE
= 10 V
5
2
1
0.5
0.2
f = 400 MHz
V
CE
= 10 V
V
CE
= 3 V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
DC CURRENT GAIN vs.
COLLECTOR CURRENT
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
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