Motorola Bipolar Power Transistor Device Data

High Voltage NPN Silicon

Power Transistors

. . . designed for line operated audio output amplifier, Switchmode power supply
drivers and other switching applications.

250 V to 400 V (Min) -- VCEO(sus)

1 A Rated Collector Current

Popular TOґ220 Plastic Package

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MAXIMUM RATINGS

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Rating

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Symbol

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TIP47

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TIP48

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TIP49

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TIP50

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Unit

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CollectorґEmitter Voltage

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VCEO

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250

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300

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350

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400

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Vdc

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CollectorґBase Voltage

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VCB

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350

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400

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450

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500

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Vdc

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EmitterґBase Voltage

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VEB

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5.0

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Vdc

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Collector Current -- Continuous

Peak

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1.0
2.0

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Adc

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Base Current

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0.6

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Adc

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Total Power Dissipation

@ TC = 25

Derate above 25

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0.32

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Watts
W/

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Total Power Dissipation

@ TA = 25

Derate above 25

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2.0

0.016

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Watts
W/

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Unclamped Inducting Load

Energy (See Figure 8)

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Operating and Storage Junction

Temperature Range

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TJ, Tstg

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ґ 65 to + 150

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THERMAL CHARACTERISTICS

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Characteristic

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Symbol

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Max

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Unit

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Thermal Resistance, Junction to Case

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3.125

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C/W

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Thermal Resistance, Junction to Ambient

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62.5

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C/W

Figure 1. Power Derating

TC, CASE TEMPERATURE (

╟

100

160

140

120

, POWER DISSIP

TION (W

TTS)

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP47/D

╘

Motorola, Inc. 1995

TIP47

TIP49

TIP48

TIP50

1.0 AMPERE

POWER TRANSISTORS

NPN SILICON

250 ґ 300 ґ 350 ґ 400 VOLTS

40 WATTS

*Motorola Preferred Device

CASE 221Aґ06

TOґ220AB

REV 1

TIP47 TIP49 TIP48 TIP50

Motorola Bipolar Power Transistor Device Data

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ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

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Characteristic

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Symbol

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Min

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Max

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Unit

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OFF CHARACTERISTICS

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CollectorґEmitter Sustaining Voltage (1)

TIP47

(IC = 30 mAdc, IB = 0)

TIP48
TIP49
TIP50

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VCEO(sus)

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250
300
350
400

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--
--
--
--

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Vdc

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Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

TIP47

(VCE = 200 Vdc, IB = 0)

TIP48

(VCE = 250 Vdc, IB = 0)

TIP49

(VCE = 300 Vdc, IB = 0)

TIP50

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ICEO

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--
--
--
--

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1.0
1.0
1.0
1.0

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mAdc

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Collector Cutoff Current

(VCE = 350 Vdc, VBE = 0)

TIP47

(VCE = 400 Vdc, VBE = 0)

TIP48

(VCE = 450 Vdc, VBE = 0)

TIP49

(VCE = 500 Vdc, VBE = 0)

TIP50

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ICES

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--
--
--
--

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1.0
1.0
1.0
1.0

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mAdc

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Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

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IEBO

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1.0

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mAdc

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ON CHARACTERISTICS (1)

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DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)

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hFE

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30
10

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150

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CollectorґEmitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.2 Adc)

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VCE(sat)

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1.0

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Vdc

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BaseґEmitter On Voltage

(IC = 1.0 Adc, VCE = 10 Vdc)

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VBE(on)

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1.5

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Vdc

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DYNAMIC CHARACTERISTICS

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CurrentґGain -- Bandwidth Product

(IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz)

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MHz

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SmallґSignal Current Gain

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

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hfe

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(1) Pulse Test: Pulse width

300

╣

s, Duty Cycle

2.0%.

TURNґON PULSE

APPROX

+11 V

Vin 0

VEB(off)

APPROX

+11 V

Vin

TURNґOFF PULSE

7.0 ns

100 < t2 < 500

╣

t3 < 15 ns

DUTY CYCLE

2.0%

APPROX ґ 9.0 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

SCOPE

VCC

Vin

Cjd << Ceb

ґ 4.0 V

Figure 2. Switching Time Equivalent Circuit

0.02

Figure 3. TurnґOn Time

IC, COLLECTOR CURRENT (AMPS)

0.01

0.1

2.0

1.0

TJ = 25

╟

VCC = 200 V
IC/IB = 5.0

TIME (

╣

0.5

0.2

0.1

0.05

0.5

0.02

1.0

0.2

TIP47 TIP49 TIP48 TIP50

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.1

r(t)

,
TRANSIENT

THERMAL

RESIST

ANCE (NORMALIZED)

1.0

100

JC(t) = r(t) R

JC = 3.125

╟

C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) ґ TC = P(pk) Z

JC(t)

P(pk)

SINGLE PULSE

1.0 k

D = 0.5

0.2

0.05

DUTY CYCLE, D = t1/t2

Figure 4. Thermal Response

0.1

0.05

0.02

0.01

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02

0.05

0.2

0.5

2.0

5.0

200

500

VCE, COLLECTORґEMITTER VOLTAGE (VOLTS)

5.0

500

Figure 5. Active Region Safe Operating Area

0.02

0.05

SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ 25

╟

BONDING WIRE LIMITED

1.0 ms

100

╣

0.2

0.1

5.0

2.0

I C

, COLLECT

OR CURRENT

(AMPS)

CURVES APPLY
BELOW RATED VCEO

1.0

0.5

100

200

500

╣

╟

TIP47
TIP48
TIP49
TIP50

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC ґ VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

0.05

0.1

0.2

0.02

0.5

IC, COLLECTOR CURRENT (AMPS)

Figure 6. TurnґOff Time

5.0

TIME (

╣

2.0

1.0

0.5

0.2

0.1

0.05

1.0

2.0

TJ = 25

╟

VCC = 200 V
IC/IB = 5.0

IC, COLLECTOR CURRENT (AMPS)

+ 4.5

,
TEMPERA

TURE COEFFICIENTS (mV/

╟

+ 3.5

+ 2.5

+ 1.5

ґ 0.5

ґ 1.5

ґ 2.5

*APPLIES FOR IC/IB

hFE/5

VC FOR VCE(sat)

VB FOR VBE

Figure 7. Temperature Coefficients

0.02

0.05

0.1

0.2

0.5

1.0

2.0

+ 25

╟

C to + 150

╟

ґ 55

╟

C to + 25

╟

+ 25

╟

C to + 150

╟

ґ 55

╟

C to + 25

╟

+ 0.5

TIP47 TIP49 TIP48 TIP50

Motorola Bipolar Power Transistor Device Data

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TIP47/D

*TIP47/D*

Part Number TIP47