Motorola Bipolar Power Transistor Device Data

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general purpose amplifier and switching applications.

CollectorґEmitter Saturation Voltage --

VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc

CollectorґEmitter Sustaining Voltage --

VCEO(sus) = 60 Vdc (Min) -- TIP41A, TIP42A

VCEO(sus)

= 80 Vdc (Min) -- TIP41B, TIP42B

VCEO(sus)

= 100 Vdc (Min) -- TIP41C, TIP42C

High Current Gain -- Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

Compact TOґ220 AB Package

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*MAXIMUM RATINGS

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Rating

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Symbol

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TIP41A
TIP42A

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TIP41B
TIP42B

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TIP41C
TIP42C

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Unit

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CollectorґEmitter Voltage

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VCEO

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ннн

нннн

100

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Vdc

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CollectorґBase Voltage

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VCB

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ннн

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100

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Vdc

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EmitterґBase Voltage

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VEB

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5.0

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Vdc

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Collector Current -- Continuous

Peak

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Adc

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Base Current

ннн

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2.0

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Adc

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Total Power Dissipation

@ TC = 25

Derate above 25

ннн

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0.52

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Watts
W/

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Total Power Dissipation

@ TA = 25

Derate above 25

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2.0

0.016

ннн

Watts
W/

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Unclamped Inductive Load Energy (1)

ннн

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62.5

ннн

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Operating and Storage Junction

Temperature Range

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TJ, Tstg

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ґ 65 to + 150

ннн

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THERMAL CHARACTERISTICS

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Characteristic

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Symbol

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Max

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Unit

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Thermal Resistance, Junction to Ambient

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нннннн

62.5

ннн

C/W

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Thermal Resistance, Junction to Case

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нннннн

1.92

ннн

C/W

(1) IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP41A/D

╘

Motorola, Inc. 1995

TIP41A
TIP41B
TIP41C
TIP42A
TIP42B
TIP42C

6 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60 ґ 80 ґ 100 VOLTS

65 WATTS

*Motorola Preferred Device

NPN

PNP

CASE 221Aґ06

TOґ220AB

REV 1

TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

Motorola Bipolar Power Transistor Device Data

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ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

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Characteristic

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Symbol

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Min

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Max

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Unit

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OFF CHARACTERISTICS

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CollectorґEmitter Sustaining Voltage (1)

TIP41A, TIP42A

(IC = 30 mAdc, IB = 0)

TIP41B, TIP42B

TIP41C, TIP42C

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VCEO(sus)

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60
80

100

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--
--
--

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Vdc

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Collector Cutoff Current

TIP41A, TIP42A

(VCE = 30 Vdc, IB = 0)

TIP41B, TIP41C

(VCE = 60 Vdc, IB = 0)

TIP42B, TIP42C

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ICEO

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--
--
--

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0.7
0.7
0.7

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mAdc

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Collector Cutoff Current

(VCE = 60 Vdc, VEB = 0)

TIP41A, TIP42A

(VCE = 80 Vdc, VEB = 0)

TIP41B, TIP42B

(VCE = 100 Vdc, VEB = 0)

TIP41C, TIP42C

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ICES

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--
--
--

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400
400
400

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╣

Adc

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Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

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IEBO

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1.0

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mAdc

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ON CHARACTERISTICS (1)

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DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc)

DC Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc)

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hFE

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30
15

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CollectorґEmitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc)

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VCE(sat)

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1.5

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Vdc

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BaseґEmitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc)

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VBE(on)

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2.0

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Vdc

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DYNAMIC CHARACTERISTICS

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CurrentґGain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

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3.0

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MHz

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SmallґSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

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hfe

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(1) Pulse Test: Pulse Width

300

╣

s, Duty Cycle

2.0%.

Figure 1. Power Derating

T, TEMPERATURE (

╟

100

160

140

Figure 2. Switching Time Test Circuit

0.06

Figure 3. TurnґOn Time

IC, COLLECTOR CURRENT (AMP)

0.02

0.4

6.0

0.07

1.0

4.0

TJ = 25

╟

VCC = 30 V
IC/IB = 10

TIME (

╣

0.5

0.3

0.1

0.05

0.1

0.6

1.0

td @ VBE(off)

5.0 V

0.03

0.7

2.0

0.2

2.0

120

, POWER DISSIP

TION (W

TTS)

1.0

2.0

3.0

4.0

+11 V

╣

ґ 9.0 V

ґ 4 V

SCOPE

VCC

+ 30 V

tr, tf

10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

100 mA

MSD6100 USED BELOW IB

100 mA

0.2

TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.1

r(t)

,
TRANSIENT

THERMAL

RESIST

ANCE (NORMALIZED)

1.0

100

JC(t) = r(t) R

JC = 1.92

╟

C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) ґ TC = P(pk) Z

JC(t)

P(pk)

SINGLE PULSE

1.0 k

D = 0.5

0.2

0.05

DUTY CYCLE, D = t1/t2

Figure 4. Thermal Response

0.1

0.05

0.02

0.01

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02

0.05

0.2

0.5

2.0

5.0

200

500

VCE, COLLECTORґEMITTER VOLTAGE (VOLTS)

5.0

100

Figure 5. ActiveґRegion Safe Operating Area

0.2

0.1

0.5

SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ TC = 25

╟

(SINGLE PULSE)

1.0 ms

2.0

1.0

5.0

I C

, COLLECT

OR CURRENT

(AMP)

0.5 ms

CURVES APPLY BELOW RATED VCEO

3.0

0.3

5.0 ms

TJ = 150

╟

TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC ґ VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

0.1

0.4

0.6

4.0

0.06

1.0

2.0

0.2

IC, COLLECTOR CURRENT (AMP)

Figure 6. TurnґOff Time

5.0

TIME (

╣

2.0

1.0

0.7
0.5

0.3
0.2

0.1

0.07
0.05

6.0

1.0

3.0

5.0

0.5

2.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

300

C, CAP

ACIT

ANCE (pF)

200

100

TJ = 25

╟

VCC = 30 V
IC/IB = 10
IB1 = IB2

Cib

Cob

3.0

TJ = 25

╟

TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

Motorola Bipolar Power Transistor Device Data

, COLLECT

ORґEMITTER VOL

T
AGE (VOL

TS)

TJ, JUNCTION TEMPERATURE (

╟

103

ґ 0.3

101

100

10ґ2

102

10ґ1

10ґ3

10 M

100 k

10 k

0.1 k

1.0 M

1.0 k

IB, BASE CURRENT (mA)

IC, COLLECTOR CURRENT (AMP)

, DC CURRENT

GAIN

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

300

500

0.1

0.2

0.4

6.0

0.06

100

7.0

0.3

VBE, BASEґEMITTER VOLTAGE (VOLTS)

Figure 10. "On" Voltages

VCE = 2.0 V

5.0

1.0

2.0

0.6

1.6

2.0

100

1000

0.8

0.4

300

500

200

╟

TJ = 150

╟

ґ 55

╟

1.2

2.0

0.06

IC, COLLECTOR CURRENT (AMP)

1.6

0.8

1.2

0.4

0.1

0.2 0.3 0.4

0.6

1.0

+ 2.5

IC = 1.0 A

100

120

160

140

, VOL

T
AGE (VOL

TS)

TJ = 25

╟

2.5 A

5.0 A

2.0 3.0 4.0

6.0

VBE(sat) @ IC/IB = 10

VBE @ VCE = 4.0 V

VCE(sat) @ IC/IB = 10

,
TEMPERA

TURE COEFFICIENTS (mV/

╟

+ 2.0

+ 1.5

+ 1.0

+ 0.5

ґ 0.5

ґ 1.0

ґ 1.5

ґ 2.0

ґ 2.5

*APPLIES FOR IC/IB

hFE/4

VC FOR VCE(sat)

VB FOR VBE

Figure 11. Temperature Coefficients

, COLLECT

OR CURRENT

(

╣

I C

ґ 0.2 ґ 0.1

+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6

Figure 12. Collector CutґOff Region

Figure 13. Effects of BaseґEmitter Resistance

VCE = 30 V

TJ = 150

╟

100

╟

REVERSE

FORWARD

IC = ICES

, EXTERNAL

BASEґEMITTER RESIST

ANCE (OHMS)

VCE = 30 V

IC = 10 x ICES

ICES

IC = 2 x ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

200

4.0

0.06

0.1

0.2 0.3

0.5

1.0

2.0 3.0 4.0

6.0

+ 25

╟

C to + 150

╟

ґ 55

╟

C to + 25

╟

+ 25

╟

C to + 150

╟

ґ 55

╟

C to + 25

╟

+ 0.7

TJ = 25

╟

TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

Motorola Bipolar Power Transistor Device Data

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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TIP41A/D

*TIP41A/D*

Part Number TIP41A