MW6IC2015NBR1 MW6IC2015GNBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2015N wideband integrated circuit is designed for base station
applications. It uses Freescale's newest High Voltage (26 to 32 Volts) LDMOS
IC technology and integrates a multi-stage structure. Its wideband on-chip
design makes it usable from 1805 to 1990 MHz. The linearity performances
cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS,
TDMA, CDMA and W-CDMA.
Final Application
· Typical Two-Tone Performance: V
DD
= 26 Volts, I
DQ1
= 100 mA, I
DQ2
=
170 mA, P
out
= 15 Watts PEP, Full Frequency Band (1805-1880 MHz or
1930-1990 MHz)
Power Gain -- 26 dB
Power Added Efficiency -- 28%
IMD -- -30 dBc
Driver Application
· Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ1
= 130 mA, I
DQ2
=
170 mA, P
out
= 3 Watts Avg., Full Frequency Band (1805-1880 MHz or
1930-1990 MHz)
Power Gain -- 27 dB
Power Added Efficiency -- 19%
Spectral Regrowth @ 400 kHz Offset = -69 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM -- 0.8% rms
· Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW
Output Power
· Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 8 W CW
P
out
.
· Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
· On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
· Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
· Integrated ESD Protection
· Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
· 200°C Capable Plastic Package
· RoHS Compliant
· In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW6IC2015N
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
1805-1990 MHz, 15 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
MW6IC2015NBR1
MW6IC2015GNBR1
CASE 1329-09
TO-272 WB-16
PLASTIC
MW6IC2015NBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW6IC2015GNBR1
(Top View)
GND
NC
RF
in
V
GS1
GND
RF
out
/
V
DS2
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
V
GS2
9
10
GND
11
Quiescent Current
Temperature Compensation
V
DS1
RF
in
V
GS1
RF
out
/V
DS2
V
GS2
V
DS1
NC
NC
NC
NC
NC
NC
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
© Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MW6IC2015NBR1 MW6IC2015GNBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +6
Vdc
Storage Temperature Range
T
stg
-65 to +200
°C
Operating Junction Temperature
T
J
200
°C
Input Power
P
in
20
dBm
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
Final Application
Stage 1, 26 Vdc, I
DQ1
= 100 mA
(P
out
= 15 W CW)
Stage 2, 26 Vdc, I
DQ2
= 170 mA
Driver Application
Stage 1, 26 Vdc, I
DQ1
= 130 mA
(P
out
= 3 W CW)
Stage 2, 26 Vdc, I
DQ2
= 170 mA
R
JC
4.3
1.2
4.3
1.3
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale 1930-1990 MHz Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 100 mA, I
DQ2
= 170 mA, P
out
=
15 W PEP, f1 = 1930 MHz, f2 = 1930.1 MHz and f1 = 1990 MHz, f2 = 1990.1 MHz, Two-Tone CW
Power Gain
G
ps
24
26
--
dB
Power Added Efficiency
PAE
26
28
--
%
Intermodulation Distortion
IMD
--
-30
-27
dBc
Input Return Loss
IRL
--
--
-10
dB
Typical Two-Tone Performances (In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 100 mA, I
DQ2
= 170 mA, P
out
=
15 W PEP, 1805-1880 MHz, Two-Tone CW, 100 kHz Tone Spacing
Power Gain
G
ps
--
26
--
dB
Power Added Efficiency
PAE
--
28
--
%
Intermodulation Distortion
IMD
--
-30
--
dBc
Input Return Loss
IRL
--
-10
--
dB
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW6IC2015NBR1 MW6IC2015GNBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 100 mA, I
DQ2
= 170 mA,
1805-1880 MHz and 1930-1990 MHz
Saturated Pulsed Output Power, CW
(5 sec(on), 1 msec(off))
P
sat
--
35
--
W
Quiescent Current Accuracy over Temperature
with 1.8 k Gate Feed Resistors (-10 to 85°C)
(1)
I
QT
--
±3
--
%
Gain Flatness in 30 MHz Bandwidth @ P
out
= 3 W CW
G
F
--
0.3
--
dB
Deviation from Linear Phase in 30 MHz Bandwidth @ P
out
= 3 W CW
--
±1
--
°
Delay @ P
out
= 3 W CW Including Output Matching
Delay
--
2.7
--
ns
Part-to-Part Phase Variation @ P
out
= 3 W CW
--
±15
--
°
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 130 mA, I
DQ2
=
170 mA, P
out
= 3 W Avg., 1805-1990 MHz and 1930-1990 MHz EDGE Modulation
Power Gain
G
ps
--
27
--
dB
Power Added Efficiency
PAE
--
19
--
%
Error Vector Magnitude
EVM
--
0.8
--
%
Spectral Regrowth at 400 kHz Offset
SR1
--
-69
--
dBc
Spectral Regrowth at 600 kHz Offset
SR2
--
-78
--
dBc
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1977.
4
RF Device Data
Freescale Semiconductor
MW6IC2015NBR1 MW6IC2015GNBR1
Z6*
0.61 x 0.04 Microstrip
Z7
1.30 x 0.04 Microstrip
Z8, Z9
1.18 x 0.08 Microstrip
PCB
Taconic TLX8-0300, 0.030,
r
= 2.55
* Variable for tuning.
Z1*
1.68 x 0.08 Microstrip
Z2
0.50 x 0.08 Microstrip
Z3
0.15 x 0.04 Microstrip
Z4
0.13 x 0.35 Microstrip
Z5
0.10 x 0.35 Microstrip
Figure 3. MW6IC2015NBR1(GNBR1)
Test Circuit Schematic -- 1930-1990 MHz
R1
R2
Z2
RF
INPUT
V
G1
Z4
Z5
RF
OUTPUT
C11
V
D2
1
2
3
4
5
6
7
8
14
13
12
11
10
9
15
16
NC
NC
NC
NC
NC
DUT
Z3
C1
V
D1
Z8
Quiescent Current
Temperature Compensation
Z1
NC
Z9
Z6
Z7
C7
C8
C4
C5
C13
C15
C14
C6
NC
C12
V
G2
C9
C10
C2
C3
Table 6. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values -- 1930-1990 MHz
Part
Description
Part Number
Manufacturer
C1, C14, C15
2.2 F Chip Capacitors (1210)
C3225X5R1H225MT
TDK
C2, C4, C11
5.6 pF 100B Chip Capacitors
100B5R6CW
ATC
C3, C5
10 F Chip Capacitors (2220)
C5750X5R1H106MT
TDK
C6
1 pF 100B Chip Capacitor
100B1R0BW
ATC
C7, C8
2.2 pF 100B Chip Capacitors
100B2R2BW
ATC
C9, C10
0.5 pF 100B Chip Capacitors
100B0R5BW
ATC
C12
0.2 pF 100B Chip Capacitor
100B0R2BW
ATC
C13
0.1 pF 100B Chip Capacitor
100B0R1BW
ATC
R1
10 k, 1/4 W Chip Resistor (1206)
R2
18 , 1/4 W Chip Resistor (1206)
MW6IC2015NBR1 MW6IC2015GNBR1
5
RF Device Data
Freescale Semiconductor
Figure 4. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout -- 1930-1990 MHz
V
D1
C1
V
G1
V
D2
CUT
OUT
AREA
MW6IC2015, Rev. 0
C6
C14
R1
R2
V
G2
C4
C5
C10
C8
C7
C9
C11
C12 C13
C2
C3
C15
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