Motorola TMOS Power MOSFET Transistor Device Data

Designer's

Data Sheet

TMOS E-FET

Power Field Effect Transistor

TO-247 with Isolated Mounting Hole

NChannel EnhancementMode Silicon Gate

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltageblocking capability without
degrading performance over time. In addition, this advanced TMOS
EFET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
draintosource diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.

Robust High Voltage Termination

Avalanche Energy Specified

SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

IDSS and VDS(on) Specified at Elevated Temperature

Isolated Mounting Hole Reduces Mounting Hardware

MAXIMUM RATINGS

(TC = 25

C unless otherwise noted)

Rating

Symbol

Value

Unit

DrainSource Voltage

VDSS

600

Vdc

DrainGate Voltage (RGS = 1.0 M

)

VDGR

600

Vdc

GateSource Voltage -- Continuous

GateSource Voltage

-- NonRepetitive (tp

10 ms)

VGS

VGSM

Vdc
Vpk

Drain Current -- Continuous

Drain Current

-- Continuous @ 100

Drain Current

-- Single Pulse (tp

ID
ID

IDM

8.0
6.4

Adc

Apk

Total Power Dissipation

Derate above 25

180

1.43

Watts

Operating and Storage Temperature Range

TJ, Tstg

55 to 150

Single Pulse DraintoSource Avalanche Energy -- Starting TJ = 25

(VDD = 100 Vdc, VGS = 10 Vdc, IL = 24 Apk, L = 3.0 mH, RG = 25

)

EAS

864

Thermal Resistance -- Junction to Case

Thermal Resistance

-- Junction to Ambient

0.70

C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

from case for 10 seconds

260

Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 4

Order this document

by MTW8N60E/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MTW8N60E

TMOS POWER FET

8.0 AMPERES

600 VOLTS

RDS(on) = 0.55 OHM

Motorola Preferred Device

CASE 340K01, Style 1

TO247AE

Motorola, Inc. 1996

MTW8N60E

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

(TJ = 25

C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

DrainSource Breakdown Voltage

(VGS = 0 Vdc, ID = 250

Adc)

Temperature Coefficient (Positive)

V(BR)DSS

600

695

--
--

Vdc

mV/

Zero Gate Voltage Drain Current

(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125

IDSS

--
--

100

Adc

GateBody Leakage Current (VGS =

20 Vdc, VDS = 0)

IGSS

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250

Adc)

Temperature Coefficient (Negative)

VGS(th)

2.0

3.0
7.0

4.0

Vdc

mV/

Static DrainSource OnResistance (VGS = 10 Vdc, ID = 4.0 Adc)

RDS(on)

0.46

0.55

Ohm

DrainSource OnVoltage (VGS = 10 Vdc)

(ID = 8.0 Adc)
(ID = 4.0 Adc, TJ = 125

VDS(on)

--
--

3.2

4.8
4.6

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 4.0 Adc)

gFS

4.0

8.5

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

25 Vdc V

0 Vdc

Ciss

2480

3470

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

247

346

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

120

SWITCHING CHARACTERISTICS (2)

TurnOn Delay Time

300 Vd

8 0 Ad

td(on)

23.6

Rise Time

(VDD = 300 Vdc, ID = 8.0 Adc,

VGS = 10 Vdc

37.6

TurnOff Delay Time

VGS = 10 Vdc,

RG = 9.1

)

td(off)

170

Fall Time

)

Gate Charge

(See Figure 8)

300 Vd

8 0 Ad

100

(VDS = 300 Vdc, ID = 8.0 Adc,

VGS = 10 Vdc)

SOURCEDRAIN DIODE CHARACTERISTICS

Forward OnVoltage (1)

(IS = 8.0 Adc, VGS = 0 Vdc)

(IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125

VSD

--
--

0.829

0.71

1.1

Vdc

Reverse Recovery Time

(See Figure 14)

8 0 Ad

0 Vd

trr

381

(See Figure 14)

(IS = 8.0 Adc, VGS = 0 Vdc,

225

( S

dIS/dt = 100 A/

156

Reverse Recovery Stored Charge

QRR

4.61

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25

from package to center of die)

4.5

Internal Source Inductance

(Measured from the source lead 0.25

from package to source bond pad)

(1) Pulse Test: Pulse Width

300

s, Duty Cycle

2%.

(2) Switching characteristics are independent of operating junction temperature.

Part Number MTW8N60E