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Part Number MRF553

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1
MRF553
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the VHF
frequency range.
·
Specified @ 12.5 V, 175 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 11.5 dB
Efficiency 60% (Typ)
·
Cost Effective PowerMacro Package
·
Electroless Tin Plated Leads for Improved Solderability
·
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector­Emitter Voltage
VCEO
16
Vdc
Collector­Base Voltage
VCBO
36
Vdc
Emitter­Base Voltage
VEBO
4.0
Vdc
Collector Current -- Continuous
IC
500
mAdc
Total Device Dissipation @ TC = 75
°
C (1, 2)
Derate above 75
°
C
PD
3.0
40
Watts
mW/
°
C
Storage Temperature Range
Tstg
­ 55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction to Case
R
JC
25
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector­Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
16
--
--
Vdc
Collector­Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
36
--
--
Vdc
Collector­Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0)
V(BR)CBO
36
--
--
Vdc
Emitter­Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
V(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25
°
C)
ICES
--
--
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
hFE
30
--
200
--
NOTES:
(continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF553 PowerMacro must be properly mounted for reliable operation. AN938, "Mounting Techniques in PowerMacro Transistor,"
discusses methods of mounting and heatsinking.
Order this document
by MRF553/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF553
1.5 W, 175 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 317D­02, STYLE 2
©
Motorola, Inc. 1995
REV 7
MRF553
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
12
20
pF
FUNCTIONAL TESTS
Common­Emitter Amplifier Power Gain
Figures 1, 2
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz)
Gpe
11.5
13
--
dB
Collector Efficiency
Figures 1, 2
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz)
50
60
--
%
Load Mismatch Stress
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz,
VSWR
10:1 All Phase Angles)
No Degradation in Output Power
--
Figure 1. 140 ­ 175 MHz Broadband Circuit Schematic
C1 -- 36 pF Mini Underwood
C2 -- 47 pF Mini Underwood
C3 -- 91 pF Mini Underwood
C4 -- 68 pF Mini Underwood
C5, C9 -- 1.0
µ
F Erie Red Cap Capacitor
C6, C10 -- 0.1
µ
F, 35 V Tantulum
C7 -- 470 pF Chip Capacitor
C8 -- 2200 pF Chip Capacitor
R1 -- 4.7 k
, 1/4 W
R2 -- 100
, 1/4 W
D1 -- 1N4148 Diode
L1 -- 3 Turns, #18 AWG, 0.210
ID, 3/16
Length
L2, L4, L7 -- 0.62
, #18 AWG Wire Bent into "V"
L3, L6 -- 60 x 125 x 250 Mils Copper Pad on 27 Mils Thick Alumina Substrate
L5 -- 12
µ
H Molded Choke
L8 -- 7 Turns, #18 AWG, 0.170
ID, 7/16
Length
L9 -- 1.0
, #18 AWG Wire with 5 Ferrite Beads
B -- Ferrite Bead
Board Material -- Glass Teflon,
r = 2.56, t = 0.0625
VBB =
12.5 V
RF
INPUT
RF
OUTPUT
R1
C5
C6
+
R2
D1
B
L5
L4
C4
L3
D.U.T.
L6
L2
C2
L1
C1
C3
L7
C7
C10
C9
5 x B
L9
B
C8
L8
VCC =
12.5 V
+
3
MRF553
MOTOROLA RF DEVICE DATA
Figure 2. Typical Performance in
Broadband Circuit
G
pe
, POWER GAIN (dB)
c
, COLLECT
OR EFFICIENCY
(%)
20
18
16
14
12
10
8
6
4
2
180
140
150
160
170
100
90
80
70
60
50
40
30
20
10
0
f, FREQUENCY (MHz)
10
15
20
Gpe
c
IRL
Pout = 1.5 W, VCC = 12.5 Vdc
5
IRL, INPUT
RETURN LOSS (dB)
f
Frequency
MHz
Zin
Ohms
ZOL*
Ohms
f
Frequency
MHz
VCC = 7.5 V; Pin
VCC = 12.5 V; Pin
VCC = 7.5 V; Pout
VCC = 12.5 V; Pout
Frequency
MHz
100 mW
200 mW
300 mW
50 mW
100 mW
150 mW
1.0 W
1.6 W
2.2 W
1.1 W
2.0 W
2.6 W
140
1.65­j3.6
2.0­j2.6
2.3­j1.2
1.7­j4.1
1.8­j3.1
1.9­j2.7
9.9­j11.1
10.6­j5.1
10­j4.9
28.3­j21.5
16­j20.5
16.3­j16.5
175
2.5­j5.6
2.3­j5.9
2.8­j4.0
2.3­j4.6
2.4­j1.2
2.4­j5.7
12.1­j14.9
7.2­j9.8
8.1­j5.4
30.8­j23.3 11.4­j20.9 11.1­j14.3
f
Frequency
MHz
Zin
Ohms
ZOL*
Ohms
f
Frequency
MHz
VCC = 7.5 V; Pin
VCC = 12.5 V; Pin
VCC = 7.5 V; Pout
VCC = 12.5 V; Pout
Frequency
MHz
50 mW
100 mW
200 mW
25 mW
50 mW
100 mW
1.25 W
1.5 W
2.0 W
1.5 W
2.25 W
3.0 W
90
2.5­j9.3
2.5­j6.4
2.5­j4.4
1.6­j10.7
2.5­j7.1
2.2­j1.3
31.8­j9.2
32­j8.9
30.2­j10.7
45.8­j7.2
45.2­j3.9
40­j4.5
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Table 1. Zin and ZOL versus Collector Voltage, Input Power, and Output Power
MRF553
4
MOTOROLA RF DEVICE DATA
Figure 3. Power Output versus Power Input
Figure 4. Power Output versus Power Input
Figure 5. Power Output versus Frequency
Figure 6. Power Output versus Frequency
Figure 7. Power Output versus
Collector Voltage
Figure 8. Power Output versus
Collector Voltage
P
, POWER OUTPUT
(W
A
TTS)
out
P
, POWER OUTPUT
(W
A
TTS)
out
P
, POWER OUTPUT
(W
A
TTS)
out
P
, OUTPUT
POWER (W
A
TTS)
out
P
, POWER OUTPUT
(W
A
TTS)
out
P
, POWER OUTPUT
(W
A
TTS)
out
2.5
2
1.5
1
0.5
400
300
200
100
0
Pin, POWER INPUT (mW)
f = 175 MHz
VCC = 7.5 Vdc
4
150
100
0
Pin, POWER INPUT (mW)
3
2
1
50
200
f = 175 MHz
VCC = 12.5 Vdc
4
150
140
f, FREQUENCY (MHz)
3
2
1
160
170
180
VCC = 7.5 Vdc
Pin = 300 mW
200 mW
100 mW
4
150
140
f, FREQUENCY (MHz)
3
2
1
160
170
180
VCC = 12.5 Vdc
Pin = 150 mW
100 mW
50 mW
4
8
6
VCC, COLLECTOR VOLTAGE (Vdc)
3
2
1
10
12
14
16
f = 140 MHz
Pin = 150 mW
100 mW
50 mW
4
8
6
VCC, COLLECTOR VOLTAGE (Vdc)
3
2
1
10
12
14
16
f = 175 MHz
Pin = 150 mW
100 mW
50 mW
5
MRF553
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 317D­02
ISSUE C
STYLE 2:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION N AND R.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
C
0.075
0.100
1.91
2.54
D
0.033
0.039
0.84
0.99
F
0.097
0.104
2.46
2.64
H
0.348
0.383
8.84
9.72
J
0.008
0.012
0.24
0.30
K
0.285
0.320
7.24
8.12
N
­­­
0.065
­­­
1.65
R
­­­
0.128
­­­
3.25
T
0.025
0.040
0.64
1.01
F
D
K
H
R
A
1
2
4
3
T
SEATING
PLANE
J
C