1
MRF373R1 MRF373SR1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 860 MHz. The high gain and broadband performance of these
devices make them ideal for largesignal, common source amplifier applica-
tions in 28 volt transmitter equipment.
· Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
Output Power 60 Watts
Power Gain 13 dB
Efficiency 50%
· Typical Performance at 860 MHz, 28 Volts, Broadband PushPull Fixture
Output Power 100 Watts (PEP)
Power Gain 11.2 dB
Efficiency 40%
IMD 30 dBc
· Excellent Thermal Stability
· 100% Tested for Load Mismatch Stress at All
Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,
60 Watts CW
· In Tape and Reel. R1 = 500 units per 32 mm,
13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
65
Vdc
GateSource Voltage
V
GS
±20
Vdc
Drain Current Continuous
I
D
7
Adc
Total Device Dissipation @ T
C
= 25
°C
MRF373SR1
Derate above 25
°C
P
D
173
1.33
W
W/
°C
Storage Temperature Range
T
stg
65 to +150
°C
Operating Junction Temperature
T
J
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
MRF373SR1
R
JC
0.75
°C/W
Thermal Resistance, Junction to Case
MRF373R1
R
JC
1
°C/W
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF373/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
470 860 MHz, 60 W, 28 V
LATERAL NCHANNEL
BROADBAND
RF POWER MOSFETS
CASE 360B05, STYLE 1
NI360
MRF373R1
CASE 360C05, STYLE 1
NI360S
MRF373SR1
MRF373R1
MRF373SR1
Motorola, Inc. 2002
G
D
S
REV 6
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
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MRF373R1 MRF373SR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=1
µA)
V
(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
1
µAdc
GateSource Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0 Vdc)
I
GSS
1
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
µA)
V
GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 100 mA)
V
GS(Q)
3
4
5
Vdc
DrainSource OnVoltage
(V
GS
= 10 V, I
D
= 3 A)
V
DS(on)
0.6
0.8
Vdc
Forward Transconductance
(V
DS
= 10 V, I
D
= 3 A)
g
fs
2.2
2.9
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1 MHz)
C
iss
79
pF
Output Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1 MHz)
C
oss
46
pF
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1 MHz)
C
rss
4
pF
FUNCTIONAL CHARACTERISTICS, CW Operation
Common Source Power Gain
(V
DD
= 28 V, P
out
= 60 W, I
DQ
= 200 mA, f = 860 MHz)
G
ps
13
14.7
dB
Drain Efficiency
(V
DD
= 28 V, P
out
= 60 W, I
DQ
= 200 mA, f = 860 MHz)
50
54
%
Load Mismatch
(V
DD
= 28 V, P
out
= 60 W, I
DQ
= 200 mA, f = 860 MHz,
Load VSWR at 5:1 at All Phase Angles)
No Degradation in Output Power
TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373SR1), Broadband Fixture
Common Source Power Gain
(V
DD
= 28 Vdc, P
out
= 100 W PEP, I
DQ
= 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
G
ps
11.2
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 100 W PEP, I
DQ
= 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
40
%
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 100 W PEP, I
DQ
= 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
IMD
30
dBc
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
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MRF373R1 MRF373SR1
MOTOROLA RF DEVICE DATA
Figure 1. SingleEnded Narrowband Test Circuit Schematic (MRF373R1)
RF
INPUT
RF
OUTPUT
V
GG
C8
C7
R2
V
DD
C12
Z12
C14
C13
R1
Z2
Z3
Z4
C10
C11
Z8
Z9
Z10
Z11
Z7
C15
C1
4.7 pF, B Case Chip Capacitor, ATC
C2
15 pF, B Case Chip Capacitor, ATC
C3
6.8 pF, B Case Chip Capacitor, ATC
C4, C5, C6
10 pF, B Case Chip Capacitor, ATC
C7, C8
47 pF, B Case Chip Capacitor, ATC
C9
0.2 pF, B Case Chip Capacitor, ATC
C10, C13
300 pF, B Case Chip Capacitor, ATC, Side Mounted
C11
2) 2.2
mF, 50 V, Kemet P/N C1825C225
C12
22
mF, 50 V, Kemet P/N T491D226K50AS
C14
2) 1.0
mF, 50 V, Kemet P/N C1825C105
C15
10
mF, 35 V, Kemet P/N T491D106K35AS
L1
22 nH, Coilcraft P/N B07T
R1
1.2 k
, Vishay Dale Chip Resistor (1206)
R2
12 k
, Vishay Dale Chip Resistor (1206)
Connectors NType (female), M/A Com P/N 3052164810
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
(GX030055), height 30 mils,
r
= 2.55
Heatsink
Motorola P/N 9511LDMOSKPS1
LDMOS
m250 3 x 5 Bedstead
Insert
Motorola P/N 9511LDMOSKPS2
Insert for LDMOS
m250 3 x 5 Bedstead
End Plates
2) Motorola P/N 933MB9, End Plate for
TypeN Connector
Banana Jack and Nut
2) Johnson P/N 1080904001
Brass Banana Jack
2) H.H. Smith P/N SM101
Z1
C6
Z5
Z6
C5
C4
C1
C2
C3
C9
L1
Figure 2. SingleEnded Narrowband Test Circuit Layout
(Suitable for Use with MRF373R1)
R2
C15
C14
R1
C4
C1
C5
C6
C8
C2
C3
C9
C7
C12
C11
C10
L1
MRF373
C13
TO DRAIN
BIAS SUPPLY
TO GATE
BIAS SUPPLY
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
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MRF373R1 MRF373SR1
4
MOTOROLA RF DEVICE DATA
Figure 3. MRF373R1 Narrowband Test Fixture Photo
Figure 4. SingleEnded Narrowband Test Circuit Schematic (MRF373SR1)
RF
INPUT
RF
OUTPUT
V
GG
C10
C5
R2
V
DD
C22
Z16
C24
C23
R1
Z4
Z5
Z7
C20
C21
Z11
Z12
Z14
Z15
Z10
C25
Z1
Z8
Z9
C7
C1
C2
C4
C6
L1
C9
Z2
C11
Z13
C3
C8
Z6
Z3
C1, C2
18 pF, B Case Chip Capacitor, ATC
C3
12 pF, B Case Chip Capacitor, ATC
C4, C11
0.8 pF, B Case Chip Capacitor, ATC
C5, C10
68 pF, B Case Chip Capacitor, ATC
C6
0.3 pF, B Case Chip Capacitor, ATC
C7
15 pF, B Case Chip Capacitor, ATC
C8
10 pF, B Case Chip Capacitor, ATC
C9
1.8 pF, B Case Chip Capacitor, ATC
C20, C23
300 pF, B Case Chip Capacitor, ATC, Side Mounted
C21
2) 2.2
mF, 100 V, Vishay P/N VJ3640Y225KXBAT
C24
2) 1.0
mF, 50 V, Kemet P/N C1825C105
C22
22
mF, 35 V, Kemet P/N T491D226K35AS
C25
10
mF, 35 V, Kemet P/N T491D106K35AS
L1
22 nH, Coilcraft P/N B07T
R1
1.2 k
, Vishay Dale Chip Resistor (1206)
R2
12 k
, Vishay Dale Chip Resistor (1206)
Connectors NType (female), M/A Com P/N 3052164810
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
(GX030055), height 30 mils,
r
= 2.55
(new PCB's available from CMR)
Heatsink
Motorola P/N 9511LDMOSKPS1
LDMOS
m250 3 x 5 Bedstead
Insert
Motorola P/N 9511LDMOSKPS2S
Insert for LDMOS
m250S 3 x 5 Bedstead
End Plates
2) Motorola P/N 933MB9, End Plate for
TypeN Connector
Banana Jack and Nut
2) Johnson P/N 1080904001
Brass Banana Jack
2) H.H. Smith P/N SM101
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Archived 2005
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MRF373R1 MRF373SR1
MOTOROLA RF DEVICE DATA
Figure 5. SingleEnded Narrowband Test Circuit Layout
(Suitable for Use with MRF373SR1)
R2
C25
C24
R1
C7
C1
C8
C9
C10
C2
C3
C6
C5
C22
C21
C20
L1
MRF373S
C23
TO DRAIN
BIAS SUPPLY
TO GATE
BIAS SUPPLY
C4
C11
Figure 6. MRF373SR1 Narrowband Test Circuit Photo
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
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