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MRF20060R MRF20060RS
MOTOROLA RF DEVICE DATA
The RF SubMicron Bipolar Line
RF Power Bipolar Transistors
The MRF20060R and MRF20060RS are designed for class AB broadband
commercial and industrial applications at frequencies from 1800 to 2000 MHz.
The high gain, excellent linearity and broadband performance of these devices
make them ideal for largesignal, common emitter class AB amplifier applica-
tions. These devices are suitable for frequency modulated, amplitude modulated
and multicarrier base station RF power amplifiers.
· Guaranteed Twotone Performance at 2000 MHz, 26 Volts
Output Power -- 60 Watts (PEP)
Power Gain -- 9 dB
Efficiency -- 33%
Intermodulation Distortion -- 30 dBc
· Characterized with Series Equivalent LargeSignal Impedance Parameters
· SParameter Characterization at High Bias Levels
· Excellent Thermal Stability
· Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP)
Output Power
· Designed for FM, TDMA, CDMA and MultiCarrier Applications
· Test Fixtures Available at: http://motsps.com/rf/designtds/
Note: Not suitable for class A operation.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage (I
B
= 0 mA)
V
CEO
25
Vdc
CollectorEmitter Voltage
V
CES
60
Vdc
CollectorBase Voltage
V
CBO
60
Vdc
CollectorEmitter Voltage (R
BE
= 100 Ohm)
V
CER
30
Vdc
BaseEmitter Voltage
V
EB
3
Vdc
Collector Current Continuous
I
C
8
Adc
Total Device Dissipation @ T
C
= 25
°C
Derate above 25
°C
P
D
250
1.43
Watts
W/
°C
Storage Temperature Range
T
stg
65 to +150
°C
Operating Junction Temperature
T
J
200
°C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.7
°C/W
Order this document
by MRF20060R/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF20060R
MRF20060RS
60 W, 2000 MHz
RF POWER
BROADBAND
NPN BIPOLAR
CASE 45106, STYLE 1
(MRF20060R)
CASE 451A03, STYLE 1
(MRF20060RS)
Motorola, Inc. 2000
REV 3
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MRF20060R MRF20060RS
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 50 mAdc, I
B
= 0)
V
(BR)CEO
25
28
--
Vdc
CollectorEmitter Breakdown Voltage
(I
C
= 50 mAdc, V
BE
= 0)
V
(BR)CES
60
69
--
Vdc
CollectorBase Breakdown Voltage
(I
C
= 50 mAdc, I
E
= 0)
V
(BR)CBO
60
69
--
Vdc
Reverse BaseEmitter Breakdown Voltage
(I
B
= 10 mAdc, I
C
= 0)
V
(BR)EBO
3
3.5
--
Vdc
Zero Base Voltage Collector Leakage Current
(V
CE
= 30 Vdc, V
BE
= 0)
I
CES
--
--
10
mAdc
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 5 Vdc, I
C
= 1 Adc)
h
FE
20
40
80
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 26 Vdc, I
E
= 0, f = 1.0 MHz)
(1)
C
ob
--
55
--
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
CommonEmitter Amplifier Power Gain
(V
CC
= 26 Vdc, P
out
= 60 Watts (PEP), I
CQ
= 200 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
G
pe
9
9.8
--
dB
Collector Efficiency
(V
CC
= 26 Vdc, P
out
= 60 Watts (PEP), I
CQ
= 200 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
33
35
--
%
Intermodulation Distortion
(V
CC
= 26 Vdc, P
out
= 60 Watts (PEP), I
CQ
= 200 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
IMD
--
32
30
dB
Input Return Loss
(V
CC
= 26 Vdc, P
out
= 60 Watts (PEP), I
CQ
= 200 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz)
IRL
12
19
--
dB
Output Mismatch Stress
(V
CC
= 26 Vdc, P
out
= 60 Watts (PEP), I
CQ
= 200 mA,
f
1
= 2000.0 MHz, f
2
= 2000.1 MHz, VSWR = 3:1, All Phase
Angles at Frequency of Test)
No Degradation in Output Power
(1) For Information Only. This Part Is Collector Matched.
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MRF20060R MRF20060RS
MOTOROLA RF DEVICE DATA
Figure 1. 1.93 2 GHz Test Fixture Electrical Schematic
B1
Ferrite Bead, P/N 5659065/3B, Ferroxcube
C1
100
µF, 50 V, Electrolytic Capacitor, Mallory
C2, C4, C13
0.64.0 pF, Variable Capacitor, Gigatrim, Johanson
C3, C14
0.1
µF, Chip Capacitor, Kemit
C5
15 pF, B Case Chip Capacitor, ATC
C6, C12
1000 pF, B Case Chip Capacitor, ATC
C7, C9
91 pF, B Case Chip Capacitor, ATC
C8, C10
24 pF, B Case Chip Capacitor, ATC
C11
13 pF, B Case Chip Capacitor, ATC
C15
470
µF, 50 V, Electrolytic Capacitor, Mallory
D1
Diode, Motorola (MURS160T3)
L1, L5
12 Turns, 22 AWG, 0.140
Choke
L2, L4
.5 inch of 20 AWG
L3
12.5 nH Inductor
R1
2 x 130
, 1/8 W Chip Resistor, Rohm
R2
2 x 100
, 1/8 W Chip Resistor, Rohm
R3, R4
10
, 1/2 W, Resistor
Q1
Transistor, PNP Motorola (BD136)
Q2
Transistor, NPN Motorola (MJD47)
Board
Glass Teflon
, Arlon GX03005522,
r
RF
INPUT
RF
OUTPUT
DUT
Z10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z9
V
BB
V
CC
Q2
Q1
D1
R1
C1
C3
C6
R3
L1
L3
R2
C7
C8
L2
C5
C2
C4
C9
C10
L4
C13
B1
C12
C14 C15
R4
L5
C11
+
+
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MRF20060R MRF20060RS
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
G
pe
, POWER GAIN (dB)
G
pe
, GAIN (dB)
Figure 2. Output Power & Power Gain
versus Input Power
60
P
in
, INPUT POWER (WATTS)
10
0
4
20
40
30
Figure 3. Output Power versus Frequency
0
1850
f, FREQUENCY (MHz)
70
40
10
2
6
10
60
P out
, OUTPUT
POWER (W
A
TTS)
1800
2000
0
P out
, OUTPUT
POWER (W
A
TTS)
50
11
10
9
8
G
pe
, GAIN (dB)
1900
1950
Figure 4. Intermodulation Distortion
versus Output Power
- 20
P
out
, OUTPUT POWER (WATTS) PEP
- 70
40
Figure 5. Power Gain and Intermodulation
Distortion versus Supply Voltage
10
V
CC
, COLLECTOR SUPPLY VOLTAGE (Vdc)
9
20
60
80
8
IMD, INTERMODULA
TION DIST
OR
TION (dBc)
Figure 6. Intermodulation Distortion
versus Output Power
0.1
P
out
, OUTPUT POWER (WATTS) PEP
- 35
- 50
10
- 25
Figure 7. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
6
1.0
10
10
1.0
100
100
0.1
0
7
8
9
9.5
8.5
7.5
20
22
18
- 40
- 30
- 20
IMD, INTERMODULA
TION DIST
OR
TION (dBc)
-40
-35
IMD, INTERMODULA
TION DIST
OR
TION (dBc)
V
CC
= 26 Vdc
I
CQ
= 200 mA
f = 2000 MHz Single Tone
70
24
26
28
11
10.5
-30
-25
-20
-15
-10
- 60
- 50
- 40
- 30
20
50
30
P
out
= 60 W (PEP)
I
CQ
= 200 mA
f1 = 2000.0 MHz
f2 = 2000.1 MHz
G
pe
IMD
G
pe
P
out
3rd Order
7th Order
5th Order
P
in
= 7 W
5 W
600 mA
V
CC
= 26 Vdc
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
400 mA
200 mA
I
CQ
= 100 mA
V
CC
= 26 Vdc
I
CQ
= 200 mA
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
8
- 45
30
10
50
70
100 mA
I
CQ
= 600 mA
400 mA
200 mA
V
CC
= 26 Vdc
f
1
= 2000.0 MHz
f
2
= 2000.1 MHz
11.5
10.5
9.5
8.5
3 W
V
CC
= 26 Vdc
I
CQ
= 200 mA
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MRF20060R MRF20060RS
MOTOROLA RF DEVICE DATA
Figure 8. Performance in Broadband Circuit
f, FREQUENCY MHz)
2000
1960
1940
1920
1900
10
9
8.5
8
38
34
32
28
COLLECT
OR EFFICIENCY
(%)
INPUT
VSWR
G
pe
, GAIN (dB)
1.3:1
1.2:1
1.1:1
9.5
36
G
pe
VSWR
P
out
= 60 W (PEP)
V
CC
= 26 Vdc
I
CQ
= 200 mA
1980
Figure 9. MTBF Factor versus
Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C)
250
200
150
100
50
0
1.E+11
1.E+10
1.E+08
1.E+07
1.E+06
1.E+05
MTBF F
ACT
OR (HOURS x
AMPS )
This above graph displays calculated MTBF in hours x ampere
2
emitter curent. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by I
C2
for MTBF in a particular application.
1.E+09
2
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