MRF18085AR3 MRF18085ALSR3

5 - 1

RF Device Data
Freescale Semiconductor

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

D e s i g n e d f o r G S M a n d G S M E D G E b a s e s t a t i o n a p p l i c a t i o n s w i t h

f r e q u e n c i e s f r o m 1 8 0 0 t o 2 0 0 0 M H z . S u i t a b l e f o r T D M A , C D M A a n d
multicarrier amplifier applications. To be used in Class AB for PCN - PCS/
c e l l u l a r r a d i o a n d W L L a p p l i c a t i o n s . S p e c i f i e d f o r G S M - G S M E D G E
1805 - 1880 MHz.
· GSM and GSM EDGE Performance, Full Frequency Band

(1805 - 1880 MHz)

Power Gain - 15 dB (Typ) @ 85 Watts CW
Efficiency - 52% (Typ) @ 85 Watts CW

· Internally Matched, Controlled Q, for Ease of Use
· High Gain, High Efficiency and High Linearity
· Integrated ESD Protection
· Designed for Maximum Gain and Insertion Phase Flatness
· Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,

@ f = 1805 MHz

· Excellent Thermal Stability
· Characterized with Series Equivalent Large-Signal Impedance Parameters
· Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

µ Nominal.

· In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain - Source Voltage

DSS

- 0.5, +65

Vdc

Gate - Source Voltage

- 0.5, +15

Vdc

Total Device Dissipation @ T

= 25

°C

Derate above 25

°C

273

1.56

°C

Storage Temperature Range

stg

- 65 to +150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(1)

Unit

Thermal Resistance, Junction to Case

0.79

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M3 (Minimum)

1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

MRF18085A

Rev. 4, 12/2004

Freescale Semiconductor
Technical Data

MRF18085AR3

MRF18085ALSR3

1800 - 1880 MHz, 85 W, 26 V

GSM/GSM EDGE

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465 - 06, STYLE 1

NI - 780

MRF18085AR3

CASE 465A - 06, STYLE 1

NI - 780S

MRF18085ALSR3

5 - 2

RF Device Data

Freescale Semiconductor

MRF18085AR3 MRF18085ALSR3

Table 4. Electrical Characteristics

= 25

°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain - Source Breakdown Voltage

= 0 Vdc, I

= 100

µAdc)

(BR)DSS

Vdc

Zero Gate Voltage Drain Current

= 26 Vdc, V

= 0 Vdc)

DSS

µAdc

Gate - Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

µAdc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 200

µAdc)

GS(th)

Vdc

Gate Quiescent Voltage

= 26 Vdc, I

= 600 mAdc)

GS(Q)

2.5

3.9

4.5

Vdc

Drain - Source On - Voltage

= 10 Vdc, I

= 2 Adc)

DS(on)

0.15

Vdc

Forward Transconductance

= 10 Vdc, I

= 2 Adc)

6.0

Dynamic Characteristics

Reverse Transfer Capacitance

(1)

= 26 Vdc, V

= 0, f = 1 MHz)

rss

3.6

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Common- Source Amplifier Power Gain @ 85 W

(2)

= 26 Vdc, I

= 800 mA, f = 1805 - 1880 MHz)

13.5

Drain Efficiency @ 85 W

(2)

= 26 Vdc, I

= 800 mA, f = 1805 - 1880 MHz)

Input Return Loss @ 85 W

(2)

= 26 Vdc, I

= 800 mA, f = 1805 - 1880 MHz)

IRL

- 12

- 9

Power Output, 1 dB Compression Point

= 26 Vdc, I

= 800 mA, f = 1805 - 1880 MHz)

P1dB

Watts

Output Mismatch Stress @ P1dB

= 26 Vdc, I

= 800 mA, f = 1805 MHz,

VSWR = 5:1, All Phase Angles at Frequency of Tests)

No Degradation In Output Power

Before and After Test

1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring

batch - to - batch consistency.

MRF18085AR3 MRF18085ALSR3

5 - 3

RF Device Data
Freescale Semiconductor

BIAS

C1, C3, C6, C7

10 pF Chip Capacitors, ATC

1.8 pF Chip Capacitor, ATC

mF, 35 V Tantalum Capacitor, AVX

C5, C8

1 nF Chip Capacitors, ATC

220

mF, 63 V Electrolytic Capacitor, Radial, Philips

C10

0.3 pF Chip Capacitor, ATC

R1, R2

10 k

W, 1/4 W Chip Resistors (1206)

1.0 k

W, 1/4 W Chip Resistor (1206)

0.671

x 0.087 Microstrip

0.568

x 0.087 Microstrip

0.500

x 0.098 Microstrip Shorted Stub

0.610

x 00.118 Microstrip

0.331

x 1.153 Microstrip

0.063

x 1.153 Microstrip

0.122

x 0.925 Microstrip

0.547

x 0.925 Microstrip

0.394

x 0.177 Microstrip

Z10

0.180

x 0.087 Microstrip

Z11

0.686

x 0.087 Microstrip

Z12

0.294

x 0.087 Microstrip

PCB

Taconic TLX8, 30 mils,

= 2.55

Figure 1. 1800 - 1880 MHz Test Fixture Schematic

INPUT

OUTPUT

DUT

Z10

Z12

SUPPLY

C10

Z11

Figure 2. 1800 - 1880 MHz Test Fixture Component Layout

MRF18085A

C - PP - 02 - 01 - 2 - Rev0

CUT

OUT

AREA

Strap

C5 C6

C10

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

5 - 4

RF Device Data

Freescale Semiconductor

MRF18085AR3 MRF18085ALSR3

TYPICAL CHARACTERISTICS

1000

out

, OUTPUT POWER (WATTS)

Figure 3. Power Gain versus Output Power

, POWER GAIN (dB)

100

out

, OUTPUT POWER (WATTS)

Figure 4. Power Gain versus Output Power

, POWER GAIN (dB)

1000

= 25

out

, OUTPUT POWER (WATTS)

Figure 5. Power Gain versus Output Power

, POWER GAIN (dB)

= 26 Vdc

= 800 mA

f = 1840 MHz

100

1900

120

1800

= 8 W

f, FREQUENCY (MHz)

Figure 6. Output Power versus Frequency

out

, OUTPUT

POWER (W

TTS)

= 26 Vdc

= 800 mA

= 25

4 W

1 W

0.5 W

100

1820

1840

1860

1880

1950

1750

-28

@ 30 W

f, FREQUENCY (MHz)

Figure 7. Power Gain versus Frequency

, POWER GAIN (dB)

INPUT

RETURN LOSS (dB)

IRL,

= 26 Vdc

= 800 mA

= 25

@ 80 W

IRL @ 80 W

IRL @ 30 W

-4

-8

-12

-16

-20

-24

1800

1850

1900

1000

0.1

out

, OUTPUT POWER (WATTS)

Figure 8. Power Gain and Efficiency versus

Output Power

, POWER GAIN (dB)

, DRAIN EFFICIENCY

(%)

= 26 Vdc

= 800 mA

f = 1840 MHz
T

= 25

100

1000

0.1

24 V

= 800 mA

f = 1840 MHz
T

= 25

100

= 20 V

28 V

32 V

= 1000 mA

= 26 Vdc

f = 1840 MHz
T

= 25

800 mA

600 mA

400 mA

MRF18085AR3 MRF18085ALSR3

5 - 5

RF Device Data
Freescale Semiconductor

Figure 9. Series Equivalent Source and Load Impedance

MHz

source

load

1710

1785

1.13 - j3.62

1.69 - j4.34

1.61 - j4.23

1.79 - j2.88

1.82 - j3.15

1.90 - j2.66

= 26 V, I

= 800 mA, P

out

= 85

W CW

= 10

f = 1990 MHz

f = 1710 MHz

1805

1880

2.83 - j5.25

2.09 - j2.77

1930

4.39 - j4.97

3.00 - j5.18

2.01 - j2.44

2.01 - j2.57

1960

1990

6.59 - j4.74

1.79 - j2.37

source

= Test circuit impedance as measured from

gate to ground.

load

= Test circuit impedance as measured

from drain to ground.

Z source

Z load

Input
Matching
Network

Device
Under Test

Output
Matching
Network

load

Part Number MRF18085AR3