MRF18030BR3 MRF18030BSR3

MOTOROLA RF DEVICE DATA

The RF MOSFET Line

RF Power Field Effect Transistors

NChannel EnhancementMode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies

from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. Specified for GSM 1930 1990 MHz.
· Typical GSM Performance:

Power Gain 14 dB (Typ) @ 30 Watts
Efficiency 50% (Typ) @ 30 Watts

· Internally Matched, Controlled Q, for Ease of Use
· High Gain, High Efficiency and High Linearity
· Integrated ESD Protection
· Designed for Maximum Gain and Insertion Phase Flatness
· Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power
· Excellent Thermal Stability
· Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm,

13 inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

DrainSource Voltage

DSS

Vdc

GateSource Voltage

+15, 0.5

Vdc

Total Device Dissipation @ T

= 25

°C

Derate above 25

°C

83.3
0.48

Watts

°C

Storage Temperature Range

stg

65 to +200

°C

Operating Junction Temperature

200

°C

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

2 (Minimum)

Machine Model

M3 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

2.1

°C/W

NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Order this document

by MRF18030B/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF18030BR3

MRF18030BSR3

GSM/GSM EDGE 1.93 1.99 GHz,

30 W, 26 V

LATERAL NCHANNEL

RF POWER MOSFETs

CASE 465E03, STYLE 1

NI400

MRF18030BR3

CASE 465F03, STYLE 1

NI400S

MRF18030BSR3

Motorola, Inc. 2002

REV 2

MRF18030BR3 MRF18030BSR3
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS

= 25

°C, 50 ohm system unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

DrainSource Breakdown Voltage

= 0 Vdc, I

= 20

µAdc)

(BR)DSS

Vdc

Zero Gate Voltage Drain Current

= 26 Vdc, V

= 0 Vdc)

DSS

µAdc

GateSource Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

µAdc

ON CHARACTERISTICS

Gate Threshold Voltage

= 10 Vdc, I

= 100

µAdc)

GS(th)

Vdc

Gate Quiescent Voltage

= 26 Vdc, I

= 250 mAdc)

GS(Q)

3.9

4.5

Vdc

DrainSource OnVoltage

= 10 Vdc, I

= 1 Adc)

DS(on)

0.29

0.4

Vdc

Forward Transconductance

= 10 Vdc, I

= 1 Adc)

DYNAMIC CHARACTERISTICS

Reverse Transfer Capacitance (1)

= 26 Vdc

± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

1.3

FUNCTIONAL TESTS (In Motorola Test Fixture) (2)

Output Power, 1 dB Compression Point

= 26 Vdc, I

= 250 mA, f = 1930 1990 MHz)

P1dB

Watts

CommonSource Amplifier Power Gain @ 30 W

= 26 Vdc, I

= 250 mA, f = 1930 1990 MHz)

Drain Efficiency @ 30 W

= 26 Vdc, I

= 250 mA, f = 1930 1990 MHz)

46.5

Input Return Loss @ 30 W

= 26 Vdc, I

= 250 mA, f = 1930 1990 MHz)

IRL

Output Mismatch Stress @ 30 W

= 26 Vdc, I

= 250 mA, f1 = 1930 1990 MHz,

VSWR = 5:1, All Phase Angles at Frequency of Tests)

No Degradation In Output Power

Before and After Test

(1) Part is internally matched both on input and output.
(2) Device specifications obtained on a Production Test Fixture.

MRF18030BR3 MRF18030BSR3

MOTOROLA RF DEVICE DATA

1.8 pF, 100B Chip Capacitor

0.8 pF, 100B Chip Capacitor

C4, C5

1.2 pF, 100B Chip Capacitors

C6, C7, C8

8.2 pF, 100B Chip Capacitors

220

mF, 63 V Electrolytic Capacitor

1.0 k

, 1/8 W Chip Resistor (0805)

R2, R3

10 k

, 1/8 W Chip Resistors (0805)

0.496

x 0.087 Microstrip

1.022

x 0.087 Microstrip

0.257

x 0.633 Microstrip

0.189

x 0.394 Microstrip

0.335

x 0.394 Microstrip

0.616

x 0.087 Microstrip

0.845

x 0.087 Microstrip

0.366

x 0.087 Microstrip

0.500 x 0.087 Microstrip

Figure 1. 1930 1990 MHz Test Fixture Schematic

Figure 2. 1930 1990 MHz Test Fixture Component Layout

INPUT

OUTPUT

DUT

VBIAS

Ground

VSUPPLY

MRF18030B

(bias)

(supply)

CUT

OUT

AREA

MRF18030BR3 MRF18030BSR3
4

MOTOROLA RF DEVICE DATA

Figure 3. Wideband Gain and IRL at 30 W and

15 W Output Power

Figure 4. Output Power versus Frequency

Figure 5. Power Gain versus Output Power

Figure 6. Power Gain versus Output Power

Figure 7. Power Gain versus Output Power

Figure 8. Power Gain and Efficiency versus

Output Power

INPUT

RETURN LOSS (dB)

IRL,

1850

-30

IRL @ 30 W

@ 15 W

= 26 Vdc

= 250 mA

T = 25_C

f, FREQUENCY (MHz)

, POWER GAIN (dB)

@ 30 W

IRL @ 15 W

-25

-20

-15

-10

-5

1900

1950

2000

2050

f, FREQUENCY (MHz)

2020

1880

= 2 W

= 26 Vdc

= 250 mA

T = 25_C

1 W

0.5 W

0.25 W

1900

1920

1940

1960

1980

2000

P out

, OUTPUT

POWER (W

A
TTS)

100

0.1

out

, OUTPUT POWER (WATTS)

, POWER GAIN (dB)

= 400 mA

300 mA

= 26 Vdc

f = 1960 MHz

T = 25_C

200 mA

100 mA

85_C

100

0.1

T = 25_C

= 26 Vdc

= 250 mA

f = 1960 MHz

out

, OUTPUT POWER (WATTS)

, POWER GAIN (dB)

55_C

100

0.1

= 26 Vdc

= 250 mA

f = 1960 MHz

T = 25_C

out

, OUTPUT POWER (WATTS)

, POWER GAIN (dB)

,
DRAIN EFFICIENCY

(
%

)

100

= 22 V

24 V

= 250 mA

f = 1960 MHz

T = 25_C

out

, OUTPUT POWER (WATTS)

, POWER GAIN (dB)

28 V

30 V

26 V

MRF18030BR3 MRF18030BSR3

MOTOROLA RF DEVICE DATA

Figure 9. Series Equivalent Input and Output Impedance

MHz

1710

1785

1805

2.92 + j8.24

4.15 + j10.38

3.84 + j9.75

4.18 + j9.06

4.59 + j9.46

4.98 + j9.06

= Complex conjugate of the source impedance.

* = Complex conjugate of the optimum load

impedance at a given power, voltage,
bias current and frequency.

Note: Z

* was chosen based on tradeoffs between gain,

output power, and drain efficiency.

= 26 V, I

= 250 mA, P

out

= 30 W (CW)

Zin

Z OL*

Input

Matching

Network

Device

Under Test

Output

Matching

Network

f = 2110 MHz

f = 1710 MHz

1840

1880

1960

4.04 + j10.22

6.20 + j12.29

6.12 + j12.29

6.10 + j7.63

5.83 + j6.89

5.55 + j6.33

1990

2110

15.19 + j11.85

8.61 + j12.10

5.93 + j6.66

3.82 + j5.33

f = 1710 MHz

f = 2110 MHz

= 25

Part Number MRF18030BR3