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1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Amplifier Transistors
MAXIMUM RATINGS
Rating
Symbol
MPSA05
MPSA55
MPSA06
MPSA56
Unit
Collector Emitter Voltage
VCEO
60
80
Vdc
Collector Base Voltage
VCBO
60
80
Vdc
Emitter Base Voltage
VEBO
4.0
Vdc
Collector Current Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
(1)
200
°
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
MPSA05, MPSA55
MPSA06, MPSA56
V(BR)CEO
60
80
--
--
Vdc
Emitter Base Breakdown Voltage
(IE = 100
µ
Adc, IC = 0)
V(BR)EBO
4.0
--
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICES
--
0.1
µ
Adc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
MPSA05, MPSA55
(VCB = 80 Vdc, IE = 0)
MPSA06, MPSA56
ICBO
--
--
0.1
0.1
µ
Adc
1. R
q
JA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSA05/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN
MPSA05
MPSA06
PNP
MPSA55
MPSA56
*Motorola Preferred Device
*
CASE 2904, STYLE 1
TO92 (TO226AA)
1
2
3
*
Voltage and current are negative
for PNP transistors
©
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
NPN MPSA05 MPSA06 PNP MPSA55 MPSA56
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
100
100
--
--
--
Collector Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
--
0.25
Vdc
BaseEmitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
VBE(on)
--
1.2
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product(3)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
MPSA05
MPSA06
(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz)
MPSA55
MPSA56
fT
100
50
--
--
MHz
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. Switching Time Test Circuits
OUTPUT
TURNON TIME
1.0 V
VCC
+40 V
RL
* CS
t
6.0 pF
RB
100
100
Vin
5.0
m
F
tr = 3.0 ns
0
+10 V
5.0
m
s
OUTPUT
TURNOFF TIME
+VBB
VCC
+40 V
RL
* CS
t
6.0 pF
RB
100
100
Vin
5.0
m
F
tr = 3.0 ns
5.0
m
s
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
NPN MPSA05 MPSA06 PNP MPSA55 MPSA56
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 2. MPSA05/06 CurrentGain --
Bandwidth Product
Figure 3. MPSA55/56 CurrentGain --
Bandwidth Product
Figure 4. MPSA05/06 Capacitance
Figure 5. MPSA55/56 Capacitance
Figure 6. MPSA05/06 Switching Time
Figure 7. MPSA55/56 Switching Time
100
200
2.0
IC, COLLECTOR CURRENT (mA)
300
200
100
70
50
30
IC, COLLECTOR CURRENT (mA)
100
200
10
200
100
70
50
20
10
100
0.1
VR, REVERSE VOLTAGE (VOLTS)
80
60
40
20
10
8.0
VR, REVERSE VOLTAGE (VOLTS)
1.0
100
0.1
100
70
50
30
20
10
2.0
20
VCE = 2.0 V
TJ = 25
°
C
VCE = 2.0 V
TJ = 25
°
C
TJ = 25
°
C
f T
, CURRENTGAIN BANDWIDTH PRODUCT
(MHz)
NPN
PNP
C, CAP
ACIT
ANCE (pF)
3.0
5.0 7.0
10
20
30
50
70
2.0 3.0
5.0 7.0
20
30
50 70
30
f T
, CURRENTGAIN BANDWIDTH PRODUCT
(MHz)
50
1.0
2.0
5.0
0.2
0.5
6.0
4.0
Cibo
Cobo
7.0
5.0
0.2
0.5
5.0
10
20
50
TJ = 25
°
C
Cibo
Cobo
20
10
IC, COLLECTOR CURRENT (mA)
200
100
50
20
10
IC, COLLECTOR CURRENT (mA)
10
5.0
500
200
100
50
20
10
100
100
t,
TIME (ns)
t,
TIME (ns)
50
200
500
1.0 k
500
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
ts
tf
tr
50
200
500
1.0 k
5.0 7.0
30
70
300
700
30
70
td @ VBE(off) = 0.5 V
300
700
70
30
7.0
300
70
20 30
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
ts
tf
tr
td @ VBE(off) = 0.5 V
C, CAP
ACIT
ANCE (pF)
300
NPN MPSA05 MPSA06 PNP MPSA55 MPSA56
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 8. MPSA05/06 ActiveRegion Safe
Operating Area
Figure 9. MPSA55/56 ActiveRegion Safe
Operating Area
Figure 10. MPSA05/06 DC Current Gain
Figure 11. MPSA55/56 DC Current Gain
Figure 12. MPSA05/06 "ON" Voltages
Figure 13. MPSA55/56 "ON" Voltages
2.0
500
0.5
IC, COLLECTOR CURRENT (mA)
400
200
100
80
60
40
10
, DC CURRENT
GAIN
NPN
PNP
TJ = 125
°
C
10
500
1.0
IC, COLLECTOR CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
100
TJ = 25
°
C
V
, VOL
T
AGE (VOL
TS)
V
, VOL
T
AGE (VOL
TS)
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
10
1.0
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
500
200
100
50
20
10
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
50
1.0
500
200
100
50
20
10
20
30
I C
, COLLECT
OR CURRENT
(mA)
2.0
5.0
1.0 k
2.0
5.0
50
1.0 k
I C
, COLLECT
OR CURRENT
(mA)
1.0 ms
1.0 s
TA = 25
°
C
MPSA05
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSA06
100
70
20
3.0
7.0
100
m
s
TC = 25
°
C
1.0
3.0
5.0
VCE = 1.0 V
20
100
30
50
200 300
h
FE
25
°
C
55
°
C
0.5
2.0
5.0
200
20
50
2.0
500
0.5
IC, COLLECTOR CURRENT (mA)
400
200
100
80
60
40
10
, DC CURRENT
GAIN
TJ = 125
°
C
1.0
5.0
VCE = 1.0 V
20
100
50
200
h
FE
25
°
C
55
°
C
10
500
1.0
IC, COLLECTOR CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
100
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
0.5
2.0
5.0
200
20
50
700
300
30
70
1.0 ms
1.0 s
TA = 25
°
C
MPSA55
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSA56
100
m
s
TC = 25
°
C
3.0
7.0
30
100
70
30
70
300
700
NPN MPSA05 MPSA06 PNP MPSA55 MPSA56
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 14. MPSA05/06 Collector Saturation
Region
Figure 15. MPSA55/56 Collector Saturation
Region
Figure 16. MPSA05/06 BaseEmitter
Temperature Coefficient
Figure 17. MPSA55/56 BaseEmitter
Temperature Coefficient
100
500
0.5
IC, COLLECTOR CURRENT (mA)
0.8
1.2
1.6
2.0
2.4
2.8
IC, COLLECTOR CURRENT (mA)
0.1
10
0.05
IC, COLLECTOR CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
IB, BASE CURRENT (mA)
1.0
TJ = 25
°
C
R
VB
,
TEMPERA
TURE COEFFICIENT
(mV/ C)
NPN
PNP
10
R
q
VB for VBE
q
°
R
VB
,
TEMPERA
TURE COEFFICIENT
(mV/ C)
q
°
50
IC =
100 mA
IC =
50 mA
IC =
250 mA
IC =
500 mA
IC =
10 mA
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
CE
1.0
2.0
5.0
20
50
200
20
2.0
5.0
0.2
0.5
100
500
0.5
0.8
1.2
1.6
2.0
2.4
2.8
10
R
q
VB for VBE
1.0 2.0
5.0
20
50
200
0.1
10
0.05
1.0
0.8
0.6
0.4
0.2
0
1.0
TJ = 25
°
C
50
IC =
100 mA
IC =
50 mA
IC =
250 mA
IC =
500 mA
IC =
10 mA
20
2.0
5.0
0.2
0.5
Figure 18. MPSA05, MPSA06, MPSA55 and MPSA56 Thermal Response
t, TIME (ms)
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
0.03
0.02
0.1
0.07
0.05
0.01
0.3
0.2
1.0
0.7
0.5
r(t), NORMALIZED
TRANSIENT
THERMAL
RESIST
ANCE
Z
JC(t) = r(t)
·
R
JC
TJ(pk) TC = P(pk) Z
JC(t)
Z
JA(t) = r(t)
·
R
JA
TJ(pk) TA = P(pk) Z
JA(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
(SEE AN469)
t1
t2
DUTY CYCLE, D = t1/t2
P(pk)
D = 0.5
0.2
0.1
0.02
0.01
SINGLE PULSE
SINGLE PULSE
0.05
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