Motorola TMOS Power MOSFET Transistor Device Data

Designer's

Data Sheet

Medium Power Surface Mount Products

TMOS Single P-Channel

Field Effect Transistors

MiniMOS

devices are an advanced series of power MOSFETs

which utilize Motorola's High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the draintosource diode
has a very low reverse recovery time. MiniMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dcdc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage transients.

Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

Logic Level Gate Drive -- Can Be Driven by Logic ICs

Miniature SO8 Surface Mount Package -- Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

IDSS Specified at Elevated Temperature

Avalanche Energy Specified

Mounting Information for SO8 Package Provided

DEVICE MARKING

ORDERING INFORMATION

S5P02H

Device

Reel Size

Tape Width

Quantity

S5P02H

MMSF5P02HDR2

12 mm embossed tape

4000 units

Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.

HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMSF5P02HD/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Motorola, Inc. 1997

CASE 75105, Style 13

SO8

MMSF5P02HD

SINGLE TMOS

POWER MOSFET

8.7 AMPERES

20 VOLTS

RDS(on) = 0.03 OHM

Motorola Preferred Device

Source

Top View

Source

Gate

Drain

REV 2

MMSF5P02HD

Motorola TMOS Power MOSFET Transistor Device Data

MAXIMUM RATINGS

(TJ = 25

C unless otherwise noted)

Negative sign for PChannel devices omitted for clarity

Rating

Symbol

Max

Unit

DraintoSource Voltage

VDSS

DraintoGate Voltage (RGS = 1.0 M

)

VDGR

GatetoSource Voltage -- Continuous

VGS

8.0

1 inch SQ.
FR4 or G10 PCB

10 seconds

Thermal Resistance -- Junction to Ambient
Total Power Dissipation @ TA = 25

Linear Derating Factor
Drain Current -- Continuous @ TA = 25

Continuous @ TA = 70

Pulsed Drain Current (1)

RTHJA

ID
ID

IDM

2.5

8.7
7.0

43.5

C/W

Watts

mW/

A
A
A

Minimum
FR4 or G10 PCB

10 seconds

Thermal Resistance -- Junction to Ambient
Total Power Dissipation @ TA = 25

Linear Derating Factor
Drain Current -- Continuous @ TA = 25

Continuous @ TA = 70

Pulsed Drain Current (1)

RTHJA

ID
ID

IDM

1.56
12.5

6.9
5.5

C/W

Watts

mW/

A
A
A

Operating and Storage Temperature Range

TJ, Tstg

55 to 150

Single Pulse DraintoSource Avalanche Energy -- Starting TJ = 25

(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 19 Apk, L = 5.5 mH, RG = 25

)

EAS

1000

(1) Repetitive rating; pulse width limited by maximum junction temperature.

MMSF5P02HD

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

DraintoSource Breakdown Voltage

(Cpk

2.0)

(1) (3)

(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)

V(BR)DSS

--
--

Vdc

mV/

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125

IDSS

--
--

1.0

Adc

GateBody Leakage Current (VGS =

8.0 Vdc, VDS = 0)

IGSS

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(Cpk

2.0)

(1) (3)

(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)

VGS(th)

0.7

0.9
2.6

1.4

Vdc

mV/

Static DraintoSource OnResistance

(Cpk

2.0)

(1) (3)

(VGS = 4.5 Vdc, ID = 6.4 Adc)
(VGS = 2.5 Vdc, ID = 5.1 Adc)

RDS(on)

--
--

22
35

30
45

OnState Drain Current

(VDS

5.0 V, VGS = 4.5 V)

(VDS

5.0 V, VGS = 2.5 V)

ID(on)

5.0

--
--

Forward Transconductance (VDS = 9.0 Vdc, ID = 6.4 Adc)

(1)

gFS

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

16 Vdc V

0 Vdc

Ciss

1400

1960

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

925

1300

Transfer Capacitance

f = 1.0 MHz)

Crss

370

520

SWITCHING CHARACTERISTICS(2)

TurnOn Delay Time

6 0 Vd

1 0 Ad

td(on)

Rise Time

(VDD = 6.0 Vdc, ID = 1.0 Adc,

VGS = 4 5 Vdc

TurnOff Delay Time

VGS = 4.5 Vdc,
RG = 6.0

) (1)

td(off)

130

200

Fall Time

) ( )

150

Gate Charge

See Figure 8

6 0 Vd

6 4 Ad

27.3

See Figure 8

(VDS = 6.0 Vdc, ID = 6.4 Adc,

3.4

( DS

, D

VGS = 4.5 Vdc) (1)

8.0

SOURCEDRAIN DIODE CHARACTERISTICS

Forward OnVoltage(1)

(IS = 2.5 Adc, VGS = 0 Vdc) (1)

(IS = 2.5 Adc, VGS = 0 Vdc, TJ = 125

VSD

--
--

0.77

0.6

1.2

Vdc

Reverse Recovery Time

See Figure 15

2 5 Ad

0 Vd

trr

180

See Figure 15

(IS = 2.5 Adc, VGS = 0 Vdc,

( S

dIS/dt = 100 A/

s) (1)

Reverse Recovery Stored Charge

QRR

0.151

(1) Pulse Test: Pulse Width

300

s, Duty Cycle

2%.

(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.

Cpk =

Max limit Typ

3 x SIGMA

(4) Repetitive rating; pulse width limited by maximum junction temperature.

MMSF5P02HD

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

VGS =

Figure 1. OnRegion Characteristics

Figure 2. Transfer Characteristics

Figure 3. OnResistance versus Drain Current

Figure 4. OnResistance versus Drain Current

and Gate Voltage

Figure 5. OnResistance Variation with

Temperature

Figure 6. DraintoSource Leakage Current

versus Voltage

2.0

VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

8.0

6.0

VGS, GATETOSOURCE VOLTAGE (VOLTS)

3.0

1.0

4.0

2.0

VGS, GATETOSOURCE (VOLTS)

0.06

0.04

0.02

ID, DRAIN CURRENT (AMPS)

2.0

0.04

0.02

4.0

TJ, JUNCTION TEMPERATURE (

2.0

1.5

1.0

0.5

VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

4.0

1000

100

1.0

I D

, DRAIN CURRENT

(AMPS)

(W)

, DRAINT

OSOURCE

RESIST

ANCE

(OHMS)

DS(on)

, DRAINT

OSOURCE

RESIST

ANCE

(OHMS)

0.5

1.0

1.5

2.5

1.5

2.0

6.0

2.0

4.0

6.0

8.0

6.0

8.0

, DRAINT

OSOURCE

RESIST

ANCE

DS(on)

100

8.0

I DSS

, LEAKAGE (nA)

, DRAIN CURRENT

(AMPS)

DS(on)

125

150

(NORMALIZED)

TJ = 25

VGS = 4.5 V

2.5 V

VGS = 4.5 V
ID = 5.1 A

100

TJ = 125

VGS = 0 V

ID = 6.4 A
TJ = 25

TJ = 55

100

VDS

10 V

1.7 V

1.9 V

2.1 V

2.3 V

TJ = 25

2.5 V

2.7 V

3.1 V

4.5 V

3.7 V

0.06

8.0

4.0

2.0

MMSF5P02HD

Motorola TMOS Power MOSFET Transistor Device Data

POWER MOSFET SWITCHING

Switching behavior is most easily modeled and predicted

by recognizing that the power MOSFET is charge controlled.
The lengths of various switching intervals (

t) are deter-

mined by how fast the FET input capacitance can be charged
by current from the generator.

The published capacitance data is difficult to use for calculat-
ing rise and fall because draingate capacitance varies
greatly with applied voltage. Accordingly, gate charge data is
used. In most cases, a satisfactory estimate of average input
current (IG(AV)) can be made from a rudimentary analysis of
the drive circuit so that

t = Q/IG(AV)
During the rise and fall time interval when switching a resis-
tive load, VGS remains virtually constant at a level known as
the plateau voltage, VSGP. Therefore, rise and fall times may
be approximated by the following:

tr = Q2 x RG/(VGG VGSP)
tf = Q2 x RG/VGSP
where

VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turnon and turnoff delay times, gate current is
not constant. The simplest calculation uses appropriate val-
ues from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:

td(on) = RG Ciss In [VGG/(VGG VGSP)]
td(off) = RG Ciss In (VGG/VGSP)

The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the offstate condition when cal-
culating td(on) and is read at a voltage corresponding to the
onstate when calculating td(off).

At high switching speeds, parasitic circuit elements com-

plicate the analysis. The inductance of the MOSFET source
lead, inside the package and in the circuit wiring which is
common to both the drain and gate current paths, produces a
voltage at the source which reduces the gate drive current.
The voltage is determined by Ldi/dt, but since di/dt is a func-
tion of drain current, the mathematical solution is complex.
The MOSFET output capacitance also complicates the
mathematics. And finally, MOSFETs have finite internal gate
resistance which effectively adds to the resistance of the
driving source, but the internal resistance is difficult to mea-
sure and, consequently, is not specified.

The resistive switching time variation versus gate resis-

tance (Figure 9) shows how typical switching performance is
affected by the parasitic circuit elements. If the parasitics
were not present, the slope of the curves would maintain a
value of unity regardless of the switching speed. The circuit
used to obtain the data is constructed to minimize common
inductance in the drain and gate circuit loops and is believed
readily achievable with board mounted components. Most
power electronic loads are inductive; the data in the figure is
taken with a resistive load, which approximates an optimally
snubbed inductive load. Power MOSFETs may be safely op-
erated into an inductive load; however, snubbing reduces
switching losses.

Figure 7. Capacitance Variation

VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

6000

4000

C, CAP

ACIT

ANCE

(pF)

2000

Ciss

Crss

Coss

TJ = 25

VGS = 0 V

VGS

VDS

Part Number MMSF5P02HD