Motorola Bipolar Power Transistor Device Data

Plastic Darlington

Complementary Silicon Power

Transistors

. . . designed for generalґpurpose amplifier and lowґspeed switching applications.

High DC Current Gain --

hFE = 2000 (Typ) @ IC = 2.0 Adc

Monolithic Construction with Builtґin BaseґEmitter Resistors to Limit Leakage
Multiplication

Choice of Packages --

MJE700 and MJE800 series
T0220AB, MJE700T and MJE800T

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MAXIMUM RATINGS

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Rating

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Symbol

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MJE700,T
MJE800,T

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MJE702
MJE703
MJE802
MJE803

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Unit

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CollectorґEmitter Voltage

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VCEO

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Vdc

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CollectorґBase Voltage

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VCB

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Vdc

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EmitterґBase Voltage

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VEB

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5.0

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Vdc

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Collector Current

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4.0

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Adc

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Base Current

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0.1

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Adc

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CASE 77

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TOґ220

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Total Power Dissipation @ TC = 25

Derate above 25

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0.32

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0.40

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Watts
W/

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Operating and Storage Junction

Temperature Range

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TJ, Tstg

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ґ 55 to + 150

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THERMAL CHARACTERISTICS

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Characteristic

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Symbol

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Max

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Unit

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Thermal Resistance, Junction to Case

CASE 77

TOґ220

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3.13
2.50

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C/W

TC, CASE TEMPERATURE (

╟

125

150

, POWER DISSIP

TION (W

TTS)

TOґ220AB

Figure 1. Power Derating

100

TOґ126

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE700/D

╘

Motorola, Inc. 1995

MJE700,T

MJE702
MJE703

MJE800,T

MJE802
MJE803

4.0 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

40 WATT
50 WATT

PNP

NPN

CASE 77ґ08

TOґ225AA TYPE

MJE700 ґ 703
MJE800 ґ 803

CASE 221Aґ06

TOґ220AB

MJE700T
MJE800T

REV 3

MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803

Motorola Bipolar Power Transistor Device Data

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ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

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Characteristic

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Symbol

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Min

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Max

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Unit

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OFF CHARACTERISTICS

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CollectorґEmitter Breakdown Voltage (1)

MJE700,T, MJE800,T

(IC = 50 mAdc, IB = 0)

MJE702, MJE703, MJE802, MJE803

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V(BR)CEO

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60
80

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--
--

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Vdc

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Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

MJE700,T, MJE800,T

(VCE = 80 Vdc, IB = 0)

MJE702, MJE703, MJE802, MJE803

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ICEO

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--
--

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100
100

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╣

Adc

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Collector Cutoff Current (VCB = Rated BVCEO, IE = 0)

Collector Cutoff Current

(VCB = Rated BVCEO, IE = 0, TC = 100

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ICBO

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--
--

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100
500

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╣

Adc

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Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

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IEBO

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2.0

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mAdc

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ON CHARACTERISTICS

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DC Current Gain (1)

(IC = 1.5 Adc, VCE = 3.0 Vdc)

MJE700,T, MJE702, MJE800,T, MJE802

(IC = 2.0 Adc, VCE = 3.0 Vdc)

MJE703, MJE803

(IC = 4.0 Adc, VCE = 3.0 Vdc)

All devices

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hFE

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750
750
100

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--
--
--

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CollectorґEmitter Saturation Voltage (1)

(IC = 1.5 Adc, IB = 30 mAdc)

MJE700,T, MJE702, MJE800,T, MJE802

(IC = 2.0 Adc, IB = 40 mAdc)

MJE703, MJE803

(IC = 4.0 Adc, IB = 40 mAdc)

All devices

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VCE(sat)

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--
--
--

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2.5
2.8
3.0

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Vdc

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BaseґEmitter On Voltage (1)

(IC = 1.5 Adc, VCE = 3.0 Vdc)

MJE700,T, MJE702, MJE800,T, MJE802

(IC = 2.0 Adc, VCE = 3.0 Vdc)

MJE703, MJE803

(IC = 4.0 Adc, VCE = 3.0 Vdc)

All devices

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VBE(on)

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--
--
--

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2.5
2.5
3.0

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Vdc

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DYNAMIC CHARACTERISTICS

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SmallґSignal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

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hfe

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1.0

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(1) Pulse Test: Pulse Width

300

╣

s, Duty Cycle

2.0%.

0.04

0.2

2.0

0.1

0.06

0.4

1.0

4.0

IC, COLLECTOR CURRENT (AMP)

TIME (

╣

2.0

1.0
0.8

0.6

0.4

0.2

Figure 2. Switching Times Test Circuit

td @ VBE(off) = 0

PNP
NPN

4.0

0.6

Figure 3. Switching Times

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t)

,
TRANSIENT

THERMAL

RESIST

ANCE (NORMALIZED)

0.05

1.0

2.0

5.0

100

200

1.0 k

500

JC(t) = r(t) R

JC = 2.50

╟

C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) ґ TC = P(pk) Z

JC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

0.1

0.5

0.2

0.02

Figure 4. Thermal Response (MJE700T, 800T Series)

APPROX

+ 8.0 V

6.0 k

SCOPE

VCC

ґ 30 V

For td and tr, D1 id disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.

For NPN test circuit, reverse diode,
polarities and input pulses.

╣

tr, tf

10 ns

DUTY CYCLE = 1.0%

+ 4.0 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

100 mA

MSD6100 USED BELOW IB

100 mA

APPROX

ґ12 V

TUT

150

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25

╟

MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t)

,
TRANSIENT

THERMAL

RESIST

ANCE

0.05

1.0

2.0

5.0

100

200

1000

500

JC(t) = r(t)

JC = 3.12

╟

C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) ґ TC = P(pk)

JC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

0.1

0.5

0.2

Figure 5. Thermal Response (MJE700, 800 Series)

0.03

3.0

300

0.3

(NORMALIZED)

VCE, COLLECTORґEMITTER VOLTAGE (VOLTS)

0.1

100

2.0

5.0

0.5

Figure 6. MJE700 Series

MJE702, 703
MJE700

1.0

3.0

1.0 ms

7.0

5.0

100

╣

TJ = 150

╟

I C

, COLLECT

OR CURRENT

(AMP)

VCE, COLLECTORґEMITTER VOLTAGE (VOLTS)

0.1

Figure 7. MJE800 Series

I C

, COLLECT

OR CURRENT

(AMP)

100

7.0

5.0

0.2

0.7

0.3

7.0

2.0

5.0

0.5

1.0

3.0

0.2

0.7

0.3

7.0

5.0 ms

BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25

╟

C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

100

╣

1.0 ms

5.0 ms

TJ = 150

╟

BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25

╟

C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

MJE802, 803
MJE800

ACTIVEґREGION SAFEґOPERATING AREA

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC ґ VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.

The data of Figures 6 and 7 are based on TJ(pk) = 150

TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150

C. TJ(pk) may be calculated from the data in Figure 4

or 5. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.

VCE, COLLECTORґEMITTER VOLTAGE (VOLTS)

0.1

1.0

5.0

0.2

Figure 8. MJE700T

0.5

2.0

5.0

I C

, COLLECT

OR CURRENT

(AMP)

VCE, COLLECTORґEMITTER VOLTAGE (VOLTS)

0.1

Figure 9. MJE800T

I C

, COLLECT

OR CURRENT

(AMP)

100

7.0

5.0

100

7.0

1.0

5.0

0.2

0.5

2.0

100

╣

1.0 ms

5.0 ms

TJ = 150

╟

BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25

╟

C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

100

╣

1.0 ms

5.0 ms

TJ = 150

╟

BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25

╟

C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803

Motorola Bipolar Power Transistor Device Data

, COLLECT

ORґEMITTER VOL

T
AGE (VOL

TS)

, COLLECT

ORґEMITTER VOL

T
AGE (VOL

TS)

IC, COLLECTOR CURRENT (AMP)

PNP

MJE700, T Series

NPN

MJE800, T Series

Figure 10. DC Current Gain

Figure 11. Collector Saturation Region

Figure 12. "On" Voltages

0.04

IC, COLLECTOR CURRENT (AMP)

300

0.06

0.2

2.0 k

800

4.0 k

, DC CURRENT

GAIN

VCE = 3.0 V

TJ = 125

╟

3.0 k

0.1

0.6

╟

ґ 55

╟

1.0 k

0.4

1.0

6.0 k

400

600

2.0

4.0

0.04

300

0.06

0.2

2.0 k

800

4.0 k

, DC CURRENT

GAIN

3.0 k

0.1

0.6

1.0 k

0.4

1.0

6.0 k

400

600

2.0

4.0

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.6

0.1

0.2

0.5

2.0

5.0

IC =

0.5 A

1.0 A

1.0

TJ = 25

╟

3.0

1.0

0.04

IC, COLLECTOR CURRENT (AMP)

1.4

1.0

, VOL

T
AGE (VOL

TS)

2.2

1.8

0.6

0.2

0.06

0.2

2.0

0.1

0.6

0.4

1.0

4.0

0.04

IC, COLLECTOR CURRENT (AMP)

1.4

1.0

, VOL

T
AGE (VOL

TS)

2.2

1.8

0.6

0.2

0.06

0.2

2.0

0.1

0.6

0.4

1.0

4.0

100

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.6

0.1

0.2

0.5

2.0

5.0

1.0

3.0

1.0

100

VBE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

2.0 A

4.0 A

TJ = 25

╟

VCE = 3.0 V

TJ = 125

╟

ґ 55

╟

IC =

0.5 A

1.0 A

TJ = 25

╟

2.0 A

4.0 A

VBE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

TJ = 25

╟

Part Number MJE800