Motorola Bipolar Power Transistor Device Data

High-Current Complementary

Silicon Power Transistors

. . . designed for use in highґpower amplifier and switching circuit applications,

High Current Capability -- IC Continuous = 60 Amperes

DC Current Gain -- hFE = 15ґ100 @ IC = 50 Adc

Low CollectorґEmitter Saturation Voltage --

VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc

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MAXIMUM RATINGS

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Rating

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Symbol

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MJ14001

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MJ14002
MJ14003

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Unit

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CollectorґEmitter Voltage

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VCEO

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Vdc

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Collector Base Voltage

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VCBO

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Vdc

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EmitterґBase Voltage

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VEBO

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Vdc

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Collector Current -- Continuous

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Adc

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Base Current -- Continuous

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Adc

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Emitter Current -- Continuous

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Total Power Dissipation @ TC = 25

Derate above 25

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300

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Watts
W/

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Operating and Storage Junction

Temperature Range

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TJ, Tstg

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ґ 65 to + 200

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THERMAL CHARACTERISTICS

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Characteristic

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Symbol

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Max

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Unit

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Thermal Resistance, Junction to Case

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0.584

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C/W

150

Figure 1. Power Derating

TC, CASE TEMPERATURE (

╟

120

240

360

, POWER DISSIP

TION (W

TTS)

210

160

200

270

330

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ14001/D

╘

Motorola, Inc. 1995

MJ14002
MJ14001
MJ14003

*Motorola Preferred Device

60 AMPERES

COMPLEMENTARY

SILICON

POWER TRANSITORS

60 ґ 80 VOLTS

300 WATTS

NPN

PNP

CASE 197Aґ05

TOґ204AE (TOґ3)

REV 2

MJ14002 MJ14001 MJ14003

Motorola Bipolar Power Transistor Device Data

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ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

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Characteristic

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Symbol

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Min

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Max

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Unit

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OFF CHARACTERISTICS

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CollectorґEmitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0)

MJ14001
MJ14002, MJ14003

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VCEO(sus)

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60
80

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--
--

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Vdc

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Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

MJ14001

(VCE = 40 Vdc, IB = 0)

MJ14402, MJ14003

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ICEO

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--
--

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1.0
1.0

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Collector Cutoff Current

(VCE = 60 Vdc, VBE(off) = 1.5 V)

MJ14001

(VCE = 80 Vdc, VBE(off) = 1.5 V)

MJ14002, MJ14003

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ICEX

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--
--

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1.0
1.0

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Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

MJ14001

(VCB = 80 Vdc, IE = 0)

MJ14002, MJ14003

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ICBO

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--
--

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1.0
1.0

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Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

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IEBO

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1.0

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ON CHARACTERISTICS

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DC Current Gain (1)

(IC = 25 Adc, VCE = 3.0 V)
(IC = 50 Adc, VCE = 3.0 V)
(IC = 60 Adc, VCE = 3.0 V)

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hFE

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30
15

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100

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CollectorґEmitter Saturation Voltage (1)

(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 5.0 Adc)
(IC = 60 Adc, IB = 12 Adc)

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VCE(sat)

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--
--
--

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2.5

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Vdc

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BaseґEmitter Saturation Voltage (1)

(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 5.0 Adc)
(IC = 60 Adc, IB = 12 Adc)

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VBE(sat)

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--
--
--

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2
3
4

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Vdc

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DYNAMIC CHARACTERISTICS

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Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

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Cob

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2000

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(1) Pulse Test: Pulse Width = 300

╣

s, Duty Cycle

2%.

100

Figure 2. Maximum Rated Forward Biased

Safe Operating Area

VCE, COLLECTORґEMITTER VOLTAGE (VOLTS)

1.0

2.0 3.0

5.0

7.0

100

3.0

0.5

0.1

I C

, COLLECT

OR CURRENT

(AMP)

1.0

╣

1.0 ms

0.2

0.3

0.7

1.0

2.0

5.0

7.0

50
30

WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

TC = 25

╟

5.0 ms

MJ14001

MJ14002, MJ14003

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC ґ VCE limits of
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200

C; TC is

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)

200

C. TJ(pk) may be calculated from the data in Fig-

ure 13. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.

MJ14002 MJ14001 MJ14003

Motorola Bipolar Power Transistor Device Data

, COLLECT

ORґEMITTER VOL

T
AGE (VOL

TS)

, COLLECT

ORґEMITTER VOL

T
AGE (VOL

TS)

300

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

0.7 1.0

2.0

3.0

200

, DC CURRENT

GAIN

VCE = 3.0 V

100

7.0

5.0

3.0

5.0

70
50

Figure 4. DC Current Gain

2.8

0.1

IB, BASE CURRENT (AMPS)

1.0

TJ = 25

╟

5.0

3.0

2.0

0.5

2.0

1.2

0.8

0.4

7.0

1.6

2.4

7.0

0.7

0.3

0.2

300

Figure 5. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

0.7 1.0

2.0

3.0

200

, DC CURRENT

GAIN

100

7.0

5.0

3.0

5.0

70
50

Figure 6. Collector Saturation Region

2.8

0.1

IB, BASE CURRENT (AMPS)

1.0

5.0

3.0

2.0

0.5

2.0

1.2

0.8

0.4

7.0

1.6

2.4

7.0

0.7

0.3

0.2

IC = 60 A

TJ = 25

╟

NPN

MJ14002

PNP

MJ14001, MJ14003

2.8

0.7

IC, COLLECTOR CURRENT (AMPS)

, VOL

T
AGE (VOL

TS)

TJ = 25

╟

5.0

2.0

1.2

0.8

0.4

1.6

2.4

7.0

2.0

1.0

Figure 7. "On" Voltages

VBE(sat) @ IC/IB = 10

3.0

VBE(on) @ VCE = 3.0 V

VCE(sat) @ IC/IB = 10

2.8

0.7

IC, COLLECTOR CURRENT (AMPS)

, VOL

T
AGE (VOL

TS)

TJ = 25

╟

5.0

2.0

1.2

0.8

0.4

1.6

2.4

7.0

2.0

1.0

Figure 8. "On" Voltages

3.0

TJ = ґ 55

╟

TJ = 25

╟

TJ = 150

╟

VCE = 3.0 V

TJ = ґ 55

╟

TJ = 25

╟

TJ = 150

╟

IC = 25 A

IC = 10 A

IC = 60 A

IC = 25 A

IC = 10 A

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 3.0 V

VCE(sat) @ IC/IB = 10

TYPICAL ELECTRICAL CHARACTERISTICS

MJ14002 MJ14001 MJ14003

Motorola Bipolar Power Transistor Device Data

Figure 9. TurnґOn Switching Times

Figure 10. TurnґOff Switching Times

Figure 11. Capacitance Variation

Figure 12. Switching Test Circuit

4.0

IC, COLLECTOR CURRENT (AMPS)

0.04

2.0

1.0

0.3

3.0

0.7

0.1

0.07

C, CAP

ACIT

ANCE (pF)

5000

3000

10000

2.0

3.0

7.0

100

1.0

2000

1000

700

500

300

200

100

5.0

VR, REVERSE VOLTAGE (VOLTS)

t, TIME (ms)

1.0

0.01

0.02

0.1

r(t)

,
TRANSIENT

THERMAL

RESIST

ANCE (NORMALIZED)

2.0

100

JC(t) = r(t) R

JC = 0.584

╟

C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) ґ TC = P(pk) R

JC(t)

P(pk)

SINGLE PULSE

1000

D = 0.5

0.5

0.2

0.07

DUTY CYCLE, D = t1/t2

Figure 13. Thermal Response

TIME (

╣

MJ14002 (NPN)
MJ14001, MJ14003 (PNP)

IC, COLLECTOR CURRENT (AMPS)

1.0

2.0

3.0

7.0

5.0

0.5

0.3

1.0

0.2

0.1

0.07

0.05

0.03

0.02

0.01

TIME (

╣

0.7

1.0

2.0

3.0

7.0

5.0

0.7

0.2

0.5

Cob

7000

0.02

0.03

0.05

0.7

0.3

0.03

0.05

0.07

1.0

5.0

3.0

2000

200 300

500 700

20 30

50 70

7.0

0.2

0.1

0.5

0.3

0.7

0.05

0.2

MJ14002 (NPN)
MJ14001, MJ14003 (PNP)

TJ = 25

╟

Cib

Cob

+ 2.0 V

20 ns

ґ12 V

10 to 100

╣

DUTY CYCLE

2.0%

VCC ґ 30 V

TO SCOPE

20 ns

VCC ґ 30 V

TO SCOPE

20 ns

VBB

+ 7.0 V

+10

ґ12 V

10 to 100

╣

20 ns

DUTY CYCLE

2.0%

FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.

0.1

0.02

0.01

Part Number MJ14001