363

Motorola Thyristor Device Data

Triacs

Silicon Bidirectional Thyristors

. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.

Blocking Voltage to 800 Volts

All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity

and Stability

Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes

(MAC15AFP Series)

MAXIMUM RATINGS

(TJ = 25

C unless otherwise noted.)

Rating

Symbol

Value

Unit

Repetitive Peak Off-State Voltage(1) (TJ = 40 to +125

1/2 Sine Wave 50 to 60 Hz, Gate Open)

MAC15-4FP, MAC15A4FP
MAC15-6FP, MAC15A6FP
MAC15-8FP, MAC15A8FP
MAC15-10FP, MAC15A10FP

VDRM

200
400
600
800

Volts

On-State RMS Current (TC = +80

C)(2)

Full Cycle Sine Wave 50 to 60 Hz (TC = +95

IT(RMS)

15
12

Amps

Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80

preceded and followed by rated current

ITSM

150

Amps

Peak Gate Power (TC = +80

C, Pulse Width = 2

PGM

Watts

Average Gate Power (TC = +80

C, t = 8.3 ms)

PG(AV)

0.5

Watt

Peak Gate Current

IGM

Amps

Peak Gate Voltage

VGM

Volts

RMS Isolation Voltage (TA = 25

C, Relative Humidity

20%)

V(ISO)

1500

Volts

Operating Junction Temperature

40 to +125

Storage Temperature Range

Tstg

40 to +150

1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic

body.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MAC15FP

Series

MAC15AFP

Series

CASE 221C-02

STYLE 3

ISOLATED TRIACs

THYRISTORS

15 AMPERES RMS

200 thru 800 VOLTS

MT1

MT2

MAC15FP Series MAC15AFP Series

364

Motorola Thyristor Device Data

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

C/W

Thermal Resistance, Case to Sink

2.2 (typ)

C/W

Thermal Resistance, Junction to Ambient

C/W

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current (Either Direction) TJ = 25

(VD = Rated VDRM, TJ = 125

C, Gate Open)

IDRM

--
--

Peak On-State Voltage (Either Direction)

(ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle

2%)

VTM

1.3

1.6

Volts

Gate Trigger Current (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+) "A" SUFFIX ONLY

IGT

--
--
--
--

50
50
50
75

Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+) "A" SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 k

, TJ = +110

MT2(+), G(+); MT2(), G(); MT2(+), G()
MT2(), G(+) "A" SUFFIX ONLY

VGT

--
--
--
--

0.2
0.2

0.9
0.9
1.1
1.4

--
--

2
2
2

2.5

--
--

Volts

Holding Current (Either Direction)

(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)

Turn-On Time

(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1

s, Pulse Width = 2

tgt

1.5

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, TC = 80

dv/dt(c)

QUADRANT DEFINITIONS

QUADRANT II

QUADRANT I

QUADRANT III

QUADRANT IV

MT2(+)

MT2()

MT2(+), G()

MT2(+), G(+)

MT2(), G()

MT2(), G(+)

G()

G(+)

Trigger devices are recommended for gating on Triacs. They provide:

1. Consistent predictable turn-on points.

2. Simplified circuitry.

3. Fast turn-on time for cooler, more efficient and reliable operation.

ELECTRICAL CHARACTERISTICS of RECOMMENDED

BIDIRECTIONAL SWITCHES

Usage

General

Part Number

MBS4991

MBS4992

610 V

7.59 V

350

A Max

120

A Max

VS1VS2

0.5 V Max

0.2 V Max

Temperature

Coefficient

0.02%/

C Typ

1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the

voltage applied exceeds the rated blocking voltage.

MAC15FP Series MAC15AFP Series

365

Motorola Thyristor Device Data

, CASE

TEMPERA

TURE ( C)

GTMV , GA

TRIGGER VOL

T
AGE (NORMALIZED)

Figure 4. Typical Gate Trigger Current

Figure 1. RMS Current Derating

Figure 3. Typical Gate Trigger Voltage

Figure 2. On-State Power Dissipation

Figure 5. Maximum On-State Characteristics

130

120

100

110

= CONDUCTION ANGLE

125

150

to 180

TJ = 125

= CONDUCTION ANGLE

= 180

120

IT(RMS), RMS ON-STATE CURRENT (AMP)

120

100

140

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

0.7

0.5

0.3

120

100

140

TJ, JUNCTION TEMPERATURE (

0.7

0.5

0.3

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

100

0.1

0.7

0.5

0.3

0.2

TJ = 25

125

0.4

0.8

1.2

1.6

2.4

2.8

3.6

3.2

4.4

vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (

I , , GA

TRIGGER CURRENT

(NORMALIZED)

GTM

D(A

VERAGE POWER DISSIP

TION (W

TTS)

i , INST

ANT

ANEOUS FOR

ARD CURRENT

(AMP)

TYPICAL CHARACTERISTICS

MAC15FP Series MAC15AFP Series

366

Motorola Thyristor Device Data

NUMBER OF CYCLES

Figure 6. Typical Holding Current

Figure 8. Thermal Response

Figure 7. Maximum Nonrepetitive Surge Current

120

100

140

TJ, JUNCTION TEMPERATURE (

0.7

0.5

0.3

GATE OPEN
APPLIES TO EITHER DIRECTION

0.1

5 k

2 k

1 k

500

200

100

10 k

JC(t) = r(t)

t, TIME (ms)

0.2

0.5

0.02

0.1

0.01

0.5

0.2

0.05

r(t),

TRANSIENT

THERMAL

RESIST

ANCE

(NORMALIZED)

TC = 80

f = 60 Hz

300

200

100

I , HOLDING CURRENT

(NORMALIZED)

I , PEAK SURGE CURRENT

(AMP)

TSM

SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT

Part Number MAC15-10FP