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Motorola, Inc. 1997

Logic Level TMOS

NChannel Enhancement Mode

This TMOS FET is designed for high voltage, high speed

switching applications such as line drivers, relay drivers, CMOS
logic, microprocessor or TTL to high voltage interface and high
voltage display drivers.

Low Drive Requirement, VGS = 3.0 V max

Inherent Current Sharing Capability Permits Easy Paralleling of
many Devices

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain Source Voltage

VDSS

200

Vdc

GateSource Voltage

VGS

Vdc

Drain Current

Continuous(1)
Pulsed(2)

IDM

250
500

mAdc

Total Power Dissipation

@ TA = 25

Derate above TA = 25

350

6.4

mW/

Operating and Storage Temperature Range

TJ, Tstg

55 to +150

1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

TMOS is a registered trademark of Motorola, Inc.

Order this document

by BS108/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BS108

200 VOLTS

NCHANNEL TMOS

POWER FET

LOGIC LEVEL

CASE 2904, STYLE 30

TO92

1 DRAIN

2
GATE

3 SOURCE

BS108

Motorola SmallSignal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25

C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

DrainSource Breakdown Voltage

(VGS = 0, ID = 10

V(BR)DSS

200

Vdc

Zero Gate Voltage Drain Current

(VDSS = 130 Vdc, VGS = 0)

IDSS

nAdc

GateBody Leakage Current

(VGS = 15 Vdc, VDS = 0)

IGSSF

nAdc

ON CHARACTERISTICS (2)

Gate Threshold Voltage

(ID = 1.0 mA, VDS = VGS)

VGS(th)

0.5

1.5

Vdc

Static DraintoSource OnResistance

(VGS = 2.0 Vdc, ID = 50 mA)
(VGS = 2.8 Vdc, ID = 100 mA)

rDS(on)

--
--

8.0

Ohms

Drain Cutoff Current

(VGS = 0.2 V, VDS = 70 V)

IDSX

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 V, VGS = 0, f = 1.0 MHz)

Ciss

150

Output Capacitance

(VDS = 25 V, VGS = 0, f = 1.0 MHz)

Coss

Reverse Transfer Capacitance

(VDS = 25 V, VGS = 0, f = 1.0 MHz)

Crss

SWITCHING CHARACTERISTICS

TurnOn Time (See Figure 1)

td(on)

TurnOff Time (See Figure 1)

td(off)

2. Pulse Test: Pulse Width

300

s, Duty Cycle = 2.0%.

Figure 1. Switching Test Circuit

Figure 2. Switching Waveforms

RESISTIVE SWITCHING

OUTPUT
INVERTED

50%

10%

50%

toff

ton

Vin

Vout

PULSE
WIDTH

90%

10%

INPUT

90%

10 V

20 dB

ATTENUATOR

PULSE GENERATOR

+25 V

Vin

40 pF

1.0 M

Vout

TO SAMPLING SCOPE
50

INPUT

BS108

Motorola SmallSignal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 02904

(TO226AA)

ISSUE AD

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

SECTION XX

X X

SEATING
PLANE

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

0.175

0.205

4.45

5.20

0.170

0.210

4.32

5.33

0.125

0.165

3.18

4.19

0.016

0.022

0.41

0.55

0.016

0.019

0.41

0.48

0.045

0.055

1.15

1.39

0.095

0.105

2.42

2.66

0.015

0.020

0.39

0.50

0.500

12.70

0.250

6.35

0.080

0.105

2.04

2.66

0.100

2.54

0.115

2.93

0.135

3.43

STYLE 30:

PIN 1. DRAIN

2. GATE
3. SOURCE

BS108

Motorola SmallSignal Transistors, FETs and Diodes Device Data

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals"
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Opportunity/Affirmative Action Employer.

Mfax is a trademark of Motorola, Inc.

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BS108/D

Part Number BS108