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Motorola Bipolar Power Transistor Device Data

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general purpose amplifier and switching applications.

CollectorEmitter Saturation Voltage --

VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc

CollectorEmitter Sustaining Voltage --

VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

VCEO(sus)

= 100 Vdc (Min.) BD241C, BD242C

High Current Gain -- Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

Compact TO220 AB Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

BD241B
BD242B

ÎÎÎÎ

BD241C
BD242C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

CollectorEmitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

CollectorEmitter Voltage

ÎÎÎÎ

VCES

ÎÎÎÎ

115

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

EmitterBase Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current -- Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎ

3.0
5.0

ÎÎÎ

Adc
Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎ

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.32

ÎÎÎ

Watts
W/

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

65 to + 150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

ÎÎÎÎÎÎ

3.125

ÎÎÎ

C/W

100

120

140

160

Figure 1. Power Derating

TC, CASE TEMPERATURE (

, POWER DISSIP

TION (W

TTS)

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BD241B/D

Motorola, Inc. 1995

BD241B
BD241C
BD242B
BD242C

3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

80, 100 VOLTS

40 WATTS

*Motorola Preferred Device

CASE 221A06

TO220AB

NPN

PNP

REV 7

BD241B BD241C BD242B BD242C

Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min.

ÎÎÎÎ

Max.

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

CollectorEmitter Sustaining Voltage1

(IC = 30 mAdc, IB = 0)

BD241B, BD242B

BD241C, BD242C

ÎÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

BD241B, BD241C, BD242B, BD242C

ÎÎÎÎ

ICEO

ÎÎÎÎ

0.3

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 80 Vdc, VEB = 0)

BD241B, BD242B

(VCE = 100 Vdc, VEB = 0)

BD241C, BD242C

ÎÎÎÎ

ICES

ÎÎÎÎ

200
200

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

25
10

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

CollectorEmitter Saturation Voltage

(IC = 3.0 Adc, IB = 600 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

1.2

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

BaseEmitter On Voltage

(IC = 3.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain Bandwidth Product2

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

ÎÎÎÎ

3.0

ÎÎÎÎ

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SmallSignal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

ÎÎÎ

1 Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

2 fT = |hfe|

ftest.

2.0

0.03

IC, COLLECTOR CURRENT (AMP)

TIME (

1.0

0.7

0.5

0.3

0.1

0.07

0.02

0.05

0.1

0.3

0.5 0.7 1.0

3.0

td @ VBE(off) = 2.0 V

IC/IB = 10
TJ = 25

tr @ VCC = 30 V

tr @ VCC = 10 V

0.07

0.03

0.05

Figure 2. Switching Time Equivalent Circuit

Figure 3. TurnOn Time

APPROX

+ 11 V

TURN-ON PULSE

Vin 0

VEB(off)

APPROX 9.0 V

TURN-OFF PULSE

Vin

APPROX

+ 11 V

VCC

SCOPE

Cjd

Ceb

4.0 V

7.0 ns

100

500

15 ns

DUTY CYCLE

[

2.0%

Vin

BD241B BD241C BD242B BD242C

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7
0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

100

200

1.0 k

500

JC (t) = r(t) R

JC = 3.125

C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) Z

JC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

r(t),

TRANSIENT

THERMAL

RESIST

ANCE

(NORMALIZED)

, COLLECT

OREMITTER VOL

T
AGE (VOL

TS)

SECOND BREAKDOWN
LIMITED @ TJ

150

THERMAL LIMITATION @ TC = 25

BONDING WIRE LIMITED

CURVES APPLY BELOW
RATED VCEO

5.0

Figure 5. Active Region Safe Operating Area

IC, COLLECTOR CURRENT (AMP)

5.0

1.0

0.1

100

BD241B, BD242B

BD241C, BD242C

5.0 ms

100

1.0 ms

0.2

2.0

0.5

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)

150

C, TJ(pk) may be calculated from the data in Fig-

ure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

3.0

0.03

Figure 6. TurnOff Time

IC, COLLECTOR CURRENT (AMP)

tf @ VCC = 30 V

TIME (

2.0

1.0

0.5

0.3
0.2

0.1

0.05

0.03

0.05 0.07 0.1

0.2

0.5

1.0

2.0

3.0

tf @ VCC = 10 V

IB1 = IB2
IC/IB = 10
ts

= ts 1/8 tf

TJ = 25

0.3

0.7

0.07

0.7

300

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

1.0

2.0 3.0

5.0

20 30 40

0.2 0.3

0.5

CAP

ACIT

ANCE (pF)

200

100

TJ = + 25

Ceb

Ccb

BD241B BD241C BD242B BD242C

Motorola Bipolar Power Transistor Device Data

, COLLECT

OREMITTER VOL

T
AGE (VOL

TS)

500

0.03

5.0

0.05 0.07 0.1

0.3

0.5

1.0

3.0

100

300

TJ = 150

VCE = 2.0 V

0.7

7.0

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

1.4

0.003

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

0.01 0.020.03

0.1

0.2

0.5

1.0

2.0 3.0

0.8

0.6

0.4

0.2

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

, VOL

T
AGE (VOL

TS)

2.0

1.0

Figure 10. "On" Voltages

IB, BASE CURRENT (mA)

2.0

5.0

100 200

500

1000

1.6

1.2

0.8

0.4

IC = 0.3 A

TJ = 25

1.0 A

3.0 A

, DC CURRENT

GAIN

+ 2.5

0.003

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

0.01 0.02

0.05

0.1

0.2 0.3

1.0

2.0 3.0

,
TEMPERA

TURE COEFFICIENTS (mV/

+ 2.0

+ 1.5

+ 0.5

0.5

1.0

1.5

2.0

2.5

VB FOR VBE

VC FOR VCE(sat)

*APPLIES FOR IC/IB

5.0

TJ = 65

C TO + 150

103

0.4

Figure 12. Collector CutOff Region

VBE, BASEEMITTER VOLTAGE (VOLTS)

102

101

100

101

, COLLECT

OR CURRENT

(

I C 10 2

10 3

0.3 0.2 0.1

+ 0.1 + 0.2 + 0.3

+ 0.4 + 0.5

+ 0.6

VCE = 30 V

TJ = 150

100

REVERSE

FORWARD

ICES

107

Figure 13. Effects of BaseEmitter Resistance

TJ, JUNCTION TEMPERATURE (

100

120

140

160

106

105

104

103

102

, EXTERNAL

BASEEMITTER RESIST

ANCE (OHMS)

VCE = 30 V

IC = 10 x ICES

ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

0.005

0.3

0.05

1.2

1.0

VBE @ VCE = 2.0 V

+ 1.0

0.5

0.005

IC = 2 x ICES

Part Number BD242B