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Part Number BC489

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1
Motorola Small­Signal Transistors, FETs and Diodes Device Data
High Current Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector ­ Emitter Voltage
VCEO
80
Vdc
Collector ­ Base Voltage
VCBO
80
Vdc
Emitter ­ Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
0.5
Adc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watt
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
­ 55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
°
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector ­ Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
80
--
--
Vdc
Collector ­ Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
V(BR)CBO
80
--
--
Vdc
Emitter ­ Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
--
--
Vdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
--
--
100
nAdc
ON CHARACTERISTICS*
DC Current Gain
(IC = 10 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
BC489
BC489A
BC489B
(IC = 1.0 Adc, VCE = 5.0 Vdc)*
hFE
40
60
100
160
15
--
--
160
260
--
--
400
250
400
--
--
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle 2%.
Order this document
by BC489/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC489,A,B
CASE 29­04, STYLE 17
TO­92 (TO­226AA)
1
2
3
©
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
BC489,A,B
2
Motorola Small­Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS*
(Continued)
Collector ­ Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
--
--
0.2
0.3
0.5
--
Vdc
Base ­ Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)(1)
VBE(sat)
--
--
0.85
0.9
1.2
--
Vdc
DYNAMIC CHARACTERISTICS
Current­Gain -- Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
fT
--
200
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
7.0
--
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
--
50
--
pF
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle 2.0%.
Figure 1. Switching Time Test Circuits
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
5.0
µ
s
+10 V
0
Vin
5.0
µ
F
100
100
TURN­ON TIME
­1.0 V
VCC
+40 V
RL
OUTPUT
*CS < 6.0 pF
tr = 3.0 ns
5.0
µ
s
Vin
5.0
µ
F
100
100
TURN­OFF TIME
+VBB
VCC
+40 V
RL
OUTPUT
*CS < 6.0 pF
tr = 3.0 ns
RB
RB
BC489,A,B
3
Motorola Small­Signal Transistors, FETs and Diodes Device Data
Figure 2. Current­Gain -- Bandwidth Product
IC, COLLECTOR CURRENT (mA)
200
70
50
30
20
10
7.0
5.0
3.0
2.0
300
200
100
70
50
30
VCE = 2.0 V
TJ = 25
°
C
f
, CURRENT­GAIN -- BANDWIDTH PRODUCT
(MHz)
T
C, CAP
ACIT
ANCE (pF)
t,
TIME (ns)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
80
60
40
20
10
4.0
TJ = 25
°
C
Cobo
Cibo
8.0
Figure 4. Switching Time
IC, COLLECTOR CURRENT (mA)
500
50
30
20
10
7.0
5.0
1.0 k
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
700
500
300
200
100
70
50
30
20
10
ts
tf
tr
td @ VBE(off) = 0.5 V
100
6.0
200
100
70
300
Figure 5. Thermal Response
t, TIME (ms)
1.0
r(t)
TRANSIENT

THERMAL
RESIST
ANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
D = 0.5
0.2
0.1
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN­469)
TJ(pk) ­ TC = P(pk) Z
JC(t)
TJ(pk) ­ TA = P(pk) Z
JA(t)
t1
t2
P(pk)
Z
JC(t) = r(t)
·
R
JC
Z
JA(t) = r(t)
·
R
JA
SINGLE PULSE
BC489,A,B
4
Motorola Small­Signal Transistors, FETs and Diodes Device Data
VCE, COLLECTOR­EMITTER VOLTAGE (VOLTS)
1.0 k
1.0
I C
, COLLECT
OR CURRENT
(mA)
2.0
5.0
Figure 6. Active Region -- Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
700
500
300
200
100
70
50
30
20
10
3.0
10
20
50
30
7.0
70
100
BC489
100
µ
s
1.0 ms
1.0 s
TC = 25
°
C
TA = 25
°
C
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
200
100
80
60
40
h
FE
, DC CURRENT
GAIN
TJ =125
°
C
25
°
C
­55
°
C
VCE = 1.0 V
300
500
IC, COLLECTOR CURRENT (mA)
Figure 8. "On" Voltages
V
, VOL
T
AGE (VOL
TS)
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
200
20
TJ = 25
°
C
VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10
5.0
10
50
100
VBE(sat) @ IC/IB = 10
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
V
CE
, COLLECT
OR­EMITTER VOL
T
AGE (VOL
TS)
1.0
0.8
0.6
0.4
0.2
0
0.1
10
1.0
TJ = 25
°
C
IC = 10 mA
0.05
0.2
0.5
2.0
5.0
20
100 mA
250 mA
50
mA
2.0
500
50
500 mA
BC489,A,B
5
Motorola Small­Signal Transistors, FETs and Diodes Device Data
IC, COLLECTOR CURRENT (mA)
Figure 10. Base­Emitter Temperature Coefficient
­0.8
­2.8
1.0
100
10
R
VB for VBE
0.5
2.0
5.0
20
50
200
­1.2
­1.6
­2.0
­2.4
R
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
°
500
IC, COLLECTOR CURRENT (mA)
Figure 11. "On" Voltages
V
, VOL
T
AGE (VOL
TS)
­1.0
­0.8
­0.6
­0.4
­0.2
0
TJ = 25
°
C
VBE(on) @ VCE = ­1.0 V
VCE(sat) @ IC/IB = 10
­0.5
VBE(sat) @ IC/IB = 10
­1.0
­2.0
­5.0
­10
­20
­50
­100
­200
­500
IB, BASE CURRENT (mA)
Figure 12. Collector Saturation Region
V
CE
, COLLECT
OR­EMITTER VOL
T
AGE (VOL
TS)
­1.0
­0.8
­0.6
­0.4
­0.2
0
­0.1
­10
­1.0
TJ = 25
°
C
IC = ­10 mA
­0.05
­0.2
­0.5
­2.0
­5.0
­20
­50 mA
­50
­100 mA
­250 mA ­500 mA
IC, COLLECTOR CURRENT (mA)
Figure 13. Base­Emitter Temperature Coefficient
­0.8
­2.8
­1.0
­100
­10
R
VB for VBE
­0.5
­2.0
­5.0
­20
­50
­200
­1.2
­1.6
­2.0
­2.4
R
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
°
­500
BC489,A,B
6
Motorola Small­Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION X­X
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
­­­
12.70
­­­
L
0.250
­­­
6.35
­­­
N
0.080
0.105
2.04
2.66
P
­­­
0.100
­­­
2.54
R
0.115
­­­
2.93
­­­
V
0.135
­­­
3.43
­­­
1
CASE 029­04
(TO­226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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BC489/D
*BC489/D*