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Part Number RD45HMF1

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MITSUBISHI RF POWER MOS FET
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W
RD45HMF1
MITSUBISHI ELECTRIC
REV.2 7 Apr. 2003
1/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
RD45HMF1 is a MOS FET type transistor specifically
designed for 900MHz-band High power amplifiers
applications.

FEATURES
·High power and High Gain:
Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz
·High Efficiency: 50%typ.

APPLICATION
For output stage of high power amplifiers in
800-900MHz Band mobile radio sets.





ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS
RATINGS
UNIT
V
DSS
Drain to source voltage
Vgs=0V
30
V
V
GSS
Gate to source voltage
Vds=0V
+/-20
V
Pch Channel
dissipation Tc=25
°C
125
W
Pin Input
power
Zg=Zl=50
25
W
ID Drain
current
-
15
A
Tch Channel
temperature
-
175
°C
Tstg
Storage temperature
-
-40 to +175
°C
Rth j-c
Thermal resistance
junction to case
1.2
°C/W
Note 1: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS (Tc=25
°C
UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX.
I
DSS
Zerogate voltage drain current V
DS
=17V, V
GS
=0V -
-
10
uA
I
GSS
Gate to source leak current
V
GS
=10V, V
DS
=0V -
-
1
uA
V
TH
Gate threshold voltage
V
DS
=12V, I
DS
=1mA 1.0
-
3.0
V
Pout
Output power
f=900MHz ,V
DD
=12.5V 45
50
-
W
D
Drain efficiency
Pin=15W,Idq=2.0A
45
50
-
%
Load VSWR tolerance
V
DD
=15.2V,Po=45W(PinControl)
Idq=2.0A,Zg=50
Load VSWR=20:1(All Phase)
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
OUTLINE DRAWING
9.6+/-0.3
R1.6+/-0.15
25.0+/-0.3
18.5+/-0.3
24.0+/-0.6
3
5.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
4.5+/-0.7
6.2+/-0.7
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
3.3+/-0.2
0.1
4-C2
10.0+/-0.3
2
+0.05
-0.01
MITSUBISHI RF POWER MOS FET
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W
RD45HMF1
MITSUBISHI ELECTRIC
REV.2 7 Apr. 2003
2/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
0
40
80
120
160
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(°C)
CHANNEL DISSIPATION
Pch(W)
Vds VS. Ciss CHARACTERISTICS
0
50
100
150
200
250
300
0
5
10
15
20
Vds(V)
Ciss(pF)
Ta=+25°C
f=1MHz
Vds VS. Coss CHARACTERISTICS
0
100
200
300
400
500
0
5
10
15
20
Vds(V)
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
0
10
20
30
40
0
5
10
15
20
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Vgs-Ids CHARACTERISTICS
0
2
4
6
8
10
0
1
2
3
4
Vgs(V)
Ids(A)
Ta=+25°C
Vds=10V
Vds-Ids CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
8
10
Vds(V)
Ids(A)
Ta=+25°C
Vgs=3.7V
Vgs=2.5V
Vgs=3.4V
Vgs=3.1V
Vgs=2.8V
Vgs=2.2V
Vgs=4V
MITSUBISHI RF POWER MOS FET
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W
RD45HMF1
MITSUBISHI ELECTRIC
REV.2 7 Apr. 2003
3/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

TYPICAL CHARACTERISTICS
Vdd-Po CHARACTERISTICS
0
20
40
60
80
100
4
6
8
10
12
14
Vdd(V)
Po
(
W
)
0
5
10
15
20
25
Id
d
(
A
)
Po
Idd
Ta=25°C
f=900MHz
Pin=15W
Idq=2A
Zg=ZI=50 ohm
Vgs-Ids CHARACTERISTICS 2
0
2
4
6
8
10
1.5
2.5
3.5
Vgs(V)
Id
s
(
A
)
Vds=10V
Tc=-25~+75°C
-25°C
+75°C
+25°C
Pin-Po CHARACTERISTICS
0
10
20
30
40
50
25
30
35
40
45
Pin(dBm)
P
o
(d
B
m
) ,
G
p
(d
B
)
,
I
d
d
(
A
)
0
20
40
60
80
100

d(
%
)
Ta=+25°C
f=900MHz
Vdd=12.5V
Idq=2A
Po
Gp
Pin-Po CHARACTERISTICS
0
10
20
30
40
50
60
70
0
5
10
15
20
25
Pin(W)
P
o
u
t
(W
) ,

I
d
d
(
A
)
0
20
40
60
80
100
120
140


d(
%
)
Po
d
Idd
Ta=25°C
f=900MHz
Vdd=12.5V
Idq=2A
MITSUBISHI RF POWER MOS FET
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W
RD45HMF1
MITSUBISHI ELECTRIC
REV.2 7 Apr. 2003
4/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT(f=900MHz)
L1
9.1K OHM
100
90
17
4
56pF
5pF
2pF
5/5pF
5pF
2pF
3pF
f= 900MHz
Dimensions :m m
56pF
RF-IN
V dd
V gg
100OHM
L1:1Turns,I.D3mm ,D1.5mm s ilver plateted copper wire
330uF,50V
C1
RF-OUT
C1
C1:2200pF*2 in parallel
Note:Board material-Teflon substrate
M icro strip line width=4.2m m/50OHM ,er:2.7,t=1.6m m
49
90
100
10
18
53
77
1pF
5/5pF
5/5pF
L1
100pF
8.2kOHM
83
41
12
8
14
MITSUBISHI RF POWER MOS FET
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W
RD45HMF1
MITSUBISHI ELECTRIC
REV.2 7 Apr. 2003
5/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm)
Conditions
900 1.53-j0.17
1.63+j0.34
Po=45W, Vdd=12.5V,Pin=15W
Zo=10
f=900MHz Zin
f=900MHz Zout