Schottky Diodes: MNM 200 Series
Medium Barrier Schottky Mixer Diodes
Description
The MicroMetrics MNM 200 series of
Medium Barrier Schottky diodes are
metal semiconductor junction devices
that have a typical short reverse
recovery time. This allows their use at
high microwave frequencies when the
performance of the n-type may be
reduced. The forward I-V of schottky
diodes is determined by the junction
metal used. For every different metal
selection there is a different forward
voltage characteristic or "Barrier
Height". These devices are best suited
for applications through 26 GHz.
Applications
Medium Barrier Schottky Mixer diodes
are ideally suited for use in mixers,
doublers and modulators.
Features
· Multi-Junction Chips
· Low 1/F Noise
· Small Junction Capacitance
Packaging
· Chip, Glass, Ceramic, Beam Lead
52
Schottky Diodes
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Typical Performance
10
0
.5
1.0
10
1
100
µ
A
100 mA
FORW
ARD CURRENT
FORWARD VOLTAGE
(V)
Schottky Diodes: MNM 200 Series
Electrical Characteristics
53
Schottky Diodes
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Breakdown
Forward
Junction
Series
Tangential
Voltage
Voltage
Capacitance
Resistance
Signal
@10 µA
@1 mA
@0 Vdc 1 MHz
@5 mA
Sensitivity
MIN
MAX
TYP
TYP
TYP
Part
(V)
(V)
(pF)
(Ohms)
(dB)
Number
3.0
0.35
0.08
15.0
-52
MNM200
3.0
0.35
0.1
15.0
-50
MNM201
3.0
0.35
0.12
12.0
-48
MNM202
3.0
0.35
0.14
8.0
-45
MNM203
4.0
0.375
0.08
15.0
-52
MNM204
4.0
0.375
0.1
15.0
-50
MNM205
4.0
0.375
0.12
12.0
-48
MNM206
4.0
0.375
0.14
8.0
-45
MNM207
5.0
0.4
0.08
15.0
-52
MNM208
5.0
0.4
0.1
15.0
-50
MNM209
5.0
0.4
0.12
12.0
-48
MNM210
5.0
0.4
0.14
8.0
-45
MNM211
6.0
0.45
0.08
15.0
-52
MNM212
6.0
0.45
0.1
15.0
-50
MNM213
6.0
0.45
0.12
12.0
-48
MNM214
6.0
0.45
0.14
8.0
-45
MNM215
Maximum Ratings
Operating Temperature
-55°C to + 150°C
Storage Temperature
-65°C to + 200°C
Power Dissipation @25°C
250mW
(derate linearly to zero at 150°C)
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