MMBTA13
MMBTA14
NPN Darlington
Amplifier Transistor
SOT-23
Suggested Solder
Pad Layout
Features
·
Operating And Storage Temperatures 55
O
C to 150
O
C
·
R
JA
is 556
O
C/W (Mounted on FR-5 PCB 1.0"x0.75"x0.062")
·
Capable of 225mWatts of Power Dissipation
·
Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N
DIMENSIONS
INCHES
MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
(I
C
=100uAdc, I
B
=0)
30 Vdc
V
(BR)CBO
Collector-Base Breakdown Voltage 30 Vdc
V
(BR)EBO
Emitter-Base Breakdown Voltage 10 Vdc
I
C
Collector Current-Continuous 300 mAdc
I
CBO
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
100 nAdc
I
EBO
Emitter Cutoff Current
(V
EB
=10Vdc, I
C
=0)
100 nAdc
ON CHARACTERISTICS
h
FE
MMBTA13
MMBTA14
MMBTA13
MMBTA14
DC Current Gain*
(I
C
=10mAdc, V
CE
=5.0Vdc)
(I
C
=150mAdc, V
CE
=1.0Vdc)
5000
10000
10000
20000
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=0.1mAdc)
1.5
Vdc
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=100mAdc,V
CE
=5.0Vdc)
2.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
Current Gain-Bandwidth Product
(I
C
=10mAdc, V
CE
=5.0Vdc, f=100MHz)
125
MHz
C
obo
Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=1.0MHz) 8.0 pF
C
ibo
Input Capacitance
(V
BE
=0.5Vdc, I
C
=0, f=1.0MHz)
15
pF
SWITCHING CHARACTERISTICS
t
d
Delay Time (V
CC
=30Vdc, V
BE
=0.5Vdc 10 ns
t
r
Rise Time I
C
=150mAdc, I
B1
=15mAdc) 25 ns
t
s
Storage Time (V
CC
=30Vdc, I
C
=150mAdc 225 ns
t
f
Fall Time I
B1
=I
B2
=15mAdc) 60 ns
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
A
B
C
D
E
F
G
H
J
Base
Collector
Emitter
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
M C C
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mccsemi
.com
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
R
S
, SOURCE RESISTANCE (k
)
Figure 5. Wideband Noise Figure
R
S
, SOURCE RESISTANCE (k
)
5.0
50
70
100
200
30
10
20
1.0
10
10
20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
R
S
0
I
C
= 1.0 mA
100
µ
A
10
µ
A
BANDWIDTH = 1.0 Hz
I
C
= 1.0 mA
100
µ
A
10
µ
A
e n
, NOISE VOL
T
AGE (nV)
i n
, NOISE CURRENT
(pA)
2.0
5.0
10
20
50
100 200
500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
= 10
µ
A
100
µ
A
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0
2.0
5.0
10
20
50 100
200
500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10
µ
A
100
µ
A
I
C
= 1.0 mA
V T
,
T
O
T
A
L
WIDEBAND NOISE VOL
T
AGE (nV)
NF
, NOISE FIGURE (dB)
10 20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
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MMBTA14
MMBTA13
Figure 6. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
I
B
, BASE CURRENT (
µ
A)
2.0
200 k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
T
J
= 25
5
C
C, CAP
ACIT
ANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|h
fe
|, SMALL-SIGNAL
CURRENT
GAIN
h FE
, DC CURRENT
GAIN
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
0.1
0.2
0.4
1.0 2.0
4.0
10
20
40
C
ibo
C
obo
0.5
1.0
2.0
0.5
10
20
50
100 200
500
V
CE
= 5.0 V
f = 100 MHz
T
J
= 25
5
C
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
7.0 10
20
30
50 70 100
200 300
500
T
J
= 125
5
C
25
5
C
-55
5
C
V
CE
= 5.0 V
0.1 0.2 0.5 1.0 2.0
5.0 10 20 50 100 200 500 1000
T
J
= 25
5
C
I
C
= 10 mA 50 mA
250 mA 500 mA
Figure 10. "On" Voltages
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
1.6
5.0
-1.0
V
,
VOL
T
AGE (VOL
TS)
1.4
1.2
1.0
0.8
0.6
7.0
10
20 30
50 70 100 200 300
500
V
BE(sat)
@ I
C
/I
B
= 1000
R
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
5
T
J
= 25
5
C
V
BE(on)
@ V
CE
= 5.0 V
V
CE(sat)
@ I
C
/I
B
= 1000
-2.0
-3.0
-4.0
-5.0
-6.0
5.0 7.0 10
20 30
50 70 100
200 300
500
25
5
C TO 125
5
C
-55
5
C TO 25
5
C
*R
qVC
FOR V
CE(sat)
q
VB
FOR V
BE
25
5
C TO 125
5
C
-55
5
C TO 25
5
C
*APPLIES FOR I
C
/I
B
3
h
FE
/3.0
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MMBTA14
MMBTA13
Figure 12. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT
THERMAL
2.0
5.0
1.0
0.5
0.2
0.1
RESIST
ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0 k
2.0 k
5.0 k 10 k
Figure 13. Active Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 k
0.4
700
500
300
200
100
70
50
30
20
10
0.6
1.0
2.0
4.0 6.0
10
20
40
I C
, COLLECT
OR CURRENT
(mA)
T
A
= 25
°
C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Z
JC(t)
= r(t)
·
R
JC
T
J(pk)
- T
C
= P
(pk)
Z
JC(t)
Z
JA(t)
= r(t)
·
R
JA
T
J(pk)
- T
A
= P
(pk)
Z
JA(t)
1.0 ms
100
µ
s
T
C
= 25
°
C
1.0 s
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
t
P
P
P
P
P
t
1
1/f
DUTY CYCLE + t1 f +
t1
tP
PEAK PULSE POWER = P
P
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MMBTA14
MMBTA13
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