Features
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Low Leakage
l
Surface Mount Package Ideally Suited for Automatic Insertion
l
150
o
C Junction Temperature
l
High Conductance
Mechanical Data
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Case: SOT-23, Molded Plastic
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Terminals: Solderable per MIL-STD-202, Method 208
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Polarity: See Diagram
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Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Characteristic
Symbol
Value
Unit
Working Inverse Voltage
V
IV
180
V
DC Forward Current
I
F
600
mA
Average Rectified Current
Io
200
mA
Recurrent Peak Forward Current
i
f
700
mA
Peak Forward Surge Current @
@t=1.0ms
i
f(surge)
1.0
2.0
A
Power Dissipation
Pd
350
mW
Thermal Resistance
R
357
o
C/W
Operation & Storage Temp. Range
Tj, T
STG
-55 to +150
o
C
Note:
1)
These ratings are based on a max. junction temperature of 150 degrees C
2)
These are steady state limits. T he factory should be consulted on applications
involving pulsed or low duty cycle operation
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Charateristic
Symbol
Min
Max
Unit
Test Cond.
Breakdown Voltage
B
V
200
V
I
R
=5.0uA
Forward Voltage Drop
V
F
620
720
800
0.83
0.87
0.9
750
850
950
1.1
1.3
1.5
mV
mV
mV
V
V
V
I
F
=1.0mA
I
F
=10mA
I
F
=50mA
I
F
=100mA
I
F
=200mA
I
F
=300mA
Reverse Current
I
R
-----
1.0
3.0
10
5.0
nA
uA
nA
uA
V
R
=125V
V
R
=125V T
A
=150
o
C
V
R
=180V
V
R
=180V T
A
=150
o
C
Junction Capacitance Cj ----- 4 pF V
R
=0V, f=1.0MHz
MMBD1501(A)
THRU
MMBD1505(A)
High Conductance
Low Leakage Diode
350mW
t=1.0s
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
A
B
C
D
E
F
G H J
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mccsemi
.com
omponents
21201 Itasca Street Chatsworth
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M C C
MMBD1501(A) thru MMBD1505(A)
www.
mccsemi
.com
M C C
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 3.0 to 100 uA
3
5
10
20
30
50
100
250
275
300
325
I - REVERSE CURRENT (uA)
V
- RE
VERS
E
VOL
T
A
G
E
(V)
R
R
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 130 - 205 Volts
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
130
150
170
190
0
1
2
3
V - REVERSE VOLTAGE (V)
I
-
RE
VE
RS
E CU
RRE
NT
(
n
A
)
R
R
Ta= 25°C
205
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1 to 100 uA
1
2
3
5
10
20 30
50
100
350
400
450
500
550
I - FORWARD CURRENT (uA)
V
- FOR
W
A
RD VOL
T
A
G
E (mV)
F
F
Ta= 25°C
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
0.1
0.2 0.3
0.5
1
2
3
5
10
500
550
600
650
700
750
800
I - FORWARD CURRENT (mA)
V
- F
O
R
W
A
R
D
VOL
T
A
G
E
(mV)
F
F
Ta= 25°C
V
F
V
F
Average Rectified Current (Io) &
Forward Current (I ) versus
Ambient Temperature (T )
0
50
100
150
0
100
200
300
400
500
T - AMBIENT TEMPERATURE ( C)
I
-
CU
RRE
N
T
(
m
A
)
A
A
I - FO
RW
AR
D C
URR
EN
T S
TEA
DY
STA
TE -
mA
o
R
F
Io - AVE
RAGE RE
CTIFIED CU
RRENT -
mA
CAPACITANCE vs REVERSE VOLTAGE
VR - 0 to 15 V
0
2
4
6
8
10
12
14
1
1.5
2
2.5
3
3.5
4
REVERSE VOLTAGE (V)
CA
P
A
CIT
A
N
C
E (pF)
Ta= 25°C
15
POWER DERATING CURVE
0
50
100
150
200
0
100
200
300
400
500
I - AVERAGE TEMPERATURE ( C)
P
-
PO
WE
R D
I
SS
I
P
A
T
I
O
N
(
m
W)
O
D
o
DO-35 Pkg
SOT-23 Pkg
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 to 800 mA
10
20
30
50
100
200 300
500
0.8
0.9
1
1.1
1.2
I - FORWARD CURRENT (mA)
V
- FOR
W
A
RD VOL
T
A
GE (V)
F
F
Ta= 25°C
I
F
MMBD1501(A) thru MMBD1505(A)
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mccsemi
.com
M C C
CONNECTION DIAGRAMS
3
2
1
3
2
1
3
2
1
3
1
2 NC
1501
1504
1505
1503
3
1
2
11
MMBD1503 13 MMBD1503A A13
MARKING
MMBD1504 14 MMBD1504A A14
MMBD1505 15 MMBD1505A A15
MMBD1501 11 MMBD1501A A11
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