2N4401
NPN General
Purpose Amplifier
TO-92
Features
·
Through Hole Package
·
Capable of 600mWatts of Power Dissipation
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
(I
C
=1.0mAdc, I
B
=0)
40
Vdc
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=10mAdc, I
E
=0)
60
Vdc
V
(BR)EBO
Emitter-Base Breakdown Voltage
(I
E
=0.1mAdc, I
C
=0)
6.0
Vdc
I
BL
Base Cutoff Current
(V
CE
=35Vdc, V
BE
=0.4Vdc)
0.1
µ
Adc
I
CEX
Collector Cutoff Current
(V
CE
=35Vdc, V
BE
=0.4Vdc)
0.1
µ
Adc
ON CHARACTERISTICS
h
FE
DC Current Gain*
(I
C
=0.1mAdc, V
CE
=1.0Vdc)
(I
C
=1.0mAdc, V
CE
=1.0Vdc)
(I
C
=10mAdc, V
CE
=1.0Vdc)
(I
C
=150mAdc, V
CE
=1.0Vdc)
(I
C
=500mAdc, V
CE
=1.0Vdc)
20
40
80
100
40
300
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
0.4
0.75
Vdc
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
0.75
0.95
1.2
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
Current Gain-Bandwidth Product
(I
C
=20mAdc, V
CE
=10Vdc, f=100MHz)
250
MHz
C
cb
Collector-Base Capacitance
(V
CB
=5.0Vdc, I
E
=0, f=100kHz)
6.5
pF
C
eb
Emitter-Base Capacitance
(V
BE
=0.5Vdc, I
C
=0, f=100kHz)
30.0
pF
SWITCHING CHARACTERISTICS
t
d
Delay Time
(V
CC
=30Vdc, V
BE
=0.2Vdc
15
ns
t
r
Rise Time
I
C
=150mAdc, I
B1
=15mAdc)
20
ns
t
s
Storage Time
(V
CC
=30Vdc, I
C
=150mAdc
225
ns
t
f
Fall Time
I
B1
=I
B2
=15mAdc)
30
ns
*Pulse Width
300
µ
s, Duty Cycle
2.0%
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
Pin Configuration
Bottom View
C B
E
A
E
B
C
D
G
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2N4401
DC Current Gain vs Collector Current
h
FE
I
C
(mA)
60
120
180
240
300
360
1
10
100
1000
Base-Emitter ON Voltage vs
Collector Current
V
BE(ON)
- (V)
I
C
- (mA)
0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
Collector-Emitter Saturation
Volatge vs Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
V
CE(SAT)
- (V)
V
BE(SAT)
- (V)
0
.04
.08
.12
.16
.20
.24
1.0
10
100
1000
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.0
10
100
1000
I
C
- (mA)
I
C
- (mA)
Collector-Base Diode Reverse
Current vs Temperature
I
CBO
- (mA)
T
J
- (
°
C)
0.1
1.0
10
100
0
25
50
75
100 125
150
V
CB
= 20V
I
C
/I
B
= 10
T
A
= 25
°
C
I
C
/I
B
= 10
T
A
= 25
°
C
V
CE
= 10V
V
CE
= 10V
T
A
= 25
°
C
T
A
= 125
°
C
Input Capacitance vs
Reverse Bias Voltage
Volts - (V)
pF
0
8
16
24
32
40
0.1
1.0
10
C
eb
f = 1MHz
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