The RF Line
NPN Silicon
RF Power Transistor
Designed for 28 Volt microwave largesignal, common base, ClassC CW
amplifier applications in the range 1600 1640 MHz.
·
Specified 28 Volt, 1.6 GHz ClassC Characteristics
Output Power = 30 Watts
Minimum Gain = 7.5 dB, @ 30 Watts
Minimum Efficiency = 40% @ 30 Watts
·
Characterized with Series Equivalent LargeSignal Parameters from
1500 MHz to 1700 MHz
·
Silicon Nitride Passivated
·
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCES
60
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
CollectorCurrent
IC
4.0
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
103
0.58
Watts
°
C/W
Storage Temperature Range
Tstg
65 to +150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case (1) (2)
R
JC
1.7
°
C/W
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
MRF16030
CASE 395C01, STYLE 2
30 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
Order this document
by MRF16030/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 3
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
55
--
--
Vdc
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
55
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0)
ICES
--
--
10
mAdc
ON CHARACTERISTICS
DC Current Gain
(ICE = 1.0 Adc, VCE = 5.0 Vdc)
hFE
20
35
80
--
FUNCTIONAL TESTS
CollectorBase Amplifier Power Gain
(VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz)
Gpe
7.5
7.7
--
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz)
40
45
--
%
Input Return Loss
(VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz)
IRL
8.0
--
--
dB
Output Mismatch Stress
VCC = 28 Vdc, Pout = 30 Watts, f = 1600 MHz, Load
VSWR = 3:1, All phase angles at frequency of test
No Degradation in Output Power
2
REV 3
Figure 1. MRF16030 Test Fixture Schematic
B1
Fair Rite Bead on #24 Wire
C1, C5
100 pF, B Case, ATC Chip Cap
C2
0.1
µ
F, Dipped Mica Cap
C3
0.1
µ
F, Chip Cap
C4
47
µ
F, 50 V, Electrolytic
L1, L2
3 Turns, #18, 0.133
ID, 0.15
Long
L3
9 Turns, #24 Enamel
R1
82
, 1.0 W, Carbon
Board Material Teflon
®
Glass Laminate Dielectric
Thickness = 0.30
,
r = 2.55
, 2.0 oz. Copper
Figure 2. Series Equivalent Input/Output Impedance
C1
C2
C4
C3
28 Vdc
L2
L1
B1
R1
L3
C5
VCC = 28 Vdc, Pout = 30 W
ZOL* = Conjugate of the optimum load impedance into which the device
output operates at a given output power, voltage and frequency.
Zin
ZOL*
1.7 GHz
Zo = 10
f = 1.5 GHz
1.6 GHz
1.7 GHz
1.6 GHz
f = 1.5 GHz
f
MHz
Zin
Ohms
ZOL*
Ohms
1500
3.05 + j 4.88
2.66 + j 2.53
1600
4.32 + j 6.00
1.79 + j 2.80
1700
5.62 + j 5.79
1.51 + j 2.64
3
REV 3
Pin, INPUT POWER (WATTS)
P out
, OUTPUT
POWER (W
A
TTS)
4.0
4.5
5.5
6.5
7.5
8.5
9.0
45
15
Figure 3. Output Power versus Input Power
7.0
8.0
5.0
6.0
VCC = 28 Vdc
1.64 GHz
f = 1.6 GHz
40
35
30
25
20
4
REV 3
PACKAGE DIMENSIONS
CASE 395C01
ISSUE A
U
D
K
N
J
H
E
C
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.739
0.750
18.77
19.05
INCHES
B
0.240
0.260
6.10
6.60
C
0.165
0.198
4.19
5.03
D
0.215
0.225
5.46
5.72
E
0.055
0.070
1.40
1.78
H
0.079
0.091
2.01
2.31
J
0.004
0.006
0.10
0.15
K
0.210
0.240
5.33
6.10
N
0.315
0.330
8.00
8.38
Q
0.125
0.135
3.18
3.42
U
0.560 BSC
14.23 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
T
1
2
3
A
B
2 PL
Q
M
A
M
0.51 (0.020)
B
M
T
STYLE 2:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
5
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 3
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