LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series1/11
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
1
3
2
MUN2211T1
SERIES
SC59
CASE 318D, STYLE 1
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
D
230(Note 1)
mW
T
A
= 25°C
338(Note 2)
Derate above 25°C
1.8 (Note 1)
°C/W
2.7 (Note 2)
Thermal Resistance
R
JA
540(Note 1)
°C/W
Junction-to-Ambient
370(Note 2)
Thermal Resistance
R
JL
264(Note 1)
°C/W
Junction-to-Lead
287(Note 2)
Junction and Storage
T
J
, T
stg
55 to +150
°C
Temperature Range
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
PIN 2
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
R
1
R
2
MARKING DIAGRAM
8X
M
8X = Specific Device Code*
M = Date Code
This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors; a
series base resistor and a baseemitter resistor. The BRT eliminates these indi-
vidual components by
integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC59 package which is
designed for low power surface mount applications.
· Simplifies Circuit Design
· Reduces Board Space
· Reduces Component Count
· Moisture Sensitivity Level: 1
· ESD Rating Human Body Model: Class 1
ESD Rating
Machine Model: Class B
· The SC59 package can be soldered using wave or reflow. The modified
gullwinged leads absorb thermal stress during soldering eliminating the
possibility of damage to the die.
· Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
DEVICE MARKING INFORMATION
*See specific marking information in the device marking table on page 2 of this data sheet.
NPN SILICON
BIAS RESISTOR
TRANSISTORS
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series2/11
MUN2211T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN2211T1
SC59
8A
10
10
3000/Tape & Reel
MUN2212T1
SC59
8B
22
22
3000/Tape & Reel
MUN2213T1
SC59
8C
47
47
3000/Tape & Reel
MUN2214T1
SC59
8D
10
47
3000/Tape & Reel
MUN2215T1 (Note 3)
SC59
8E
10
3000/Tape & Reel
MUN2216T1 (Note 3)
SC59
8F
4.7
3000/Tape & Reel
MUN2230T1 (Note 3)
SC59
8G
1.0
1.0
3000/Tape & Reel
MUN2231T1 (Note 3)
SC59
8H
2.2
2.2
3000/Tape & Reel
MUN2232T1 (Note 3)
SC59
8J
4.7
4.7
3000/Tape & Reel
MUN2233T1 (Note 3)
SC59
8K
4.7
47
3000/Tape & Reel
MUN2234T1 (Note 3)
SC59
8L
22
47
3000/Tape & Reel
MUN2236T1
SC59
8N
100
100
3000/Tape & Reel
MUN2237T1
SC59
8P
47
22
3000/Tape & Reel
MUN2240T1 (Note 3)
SC59
8T
47
3000/Tape & Reel
MUN2241T1 (Note 3)
SC59
8U
100
3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series3/11
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
Emitter-Base Cutoff Current
MUN2211T1
(V
EB
= 6.0 V, I
C
= 0)
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.2
0.1
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
µ
A, I
E
= 0)
V
(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
ON CHARACTERISTICS
(Note 4)
DC Current Gain
MUN2211T1
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
150
140
350
350
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN2230T1/MUN2231T1
(I
C
= 10 mA, I
B
= 1 mA) MUN2215T1/MUN2216T1/
MUN2232T1/MUN2233T1/MUN2234T1
V
CE(sat)
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
)
MUN2211T1
MUN2212T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
)
MUN2213T1
MUN2240T1
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k
)
MUN2236T1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k
)
MUN2237T1
(V
CC
= 5.0 V, V
B
= 5.0 V, R
L
= 1.0 k
)
MUN2241T1
V
OL
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
4. Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
MUN2211T1 Series
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series4/11
MUN2211T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 5) (Continued)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k
)
MUN2230T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
)
MUN2215T1
MUN2216T1
MUN2233T1
MUN2240T1
V
OH
4.9
Vdc
Input Resistor
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2235T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
70
32.9
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
100
47
100
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
130
61.1
100
k
Resistor Ratio
MUN2211T1/MUN2212T1/MUN2213T1/
MUN2236T1
MUN2214T1
MUN2215T1/MUN2216T1/MUN2240T1/
MUN2241T1
MUN2230T1/MUN2231T1/MUN2232T1
MUN2233T1
MUN2234T1
MUN2237T1
R
1
/R
2
0.8
0.17
0.8
0.055
0.38
1.7
1.0
0.21
1.0
0.1
0.47
2.1
1.2
0.25
1.2
0.185
0.56
2.6
5. Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
Figure 1. Derating Curve
350
200
150
100
50
0
50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
°
C)
R
JA
= 370
°
C/W
250
P
D
, POWER DISSIP
A
TION (mW)
300
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series5/11
TYPICAL ELECTRICAL CHARACTERISTICS MUN2211T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN
Figure 2. V
CE(sat)
versus I
C
10
0
20
30
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
V
O
= 0.2 V
T
A
= -25
°
C
75
°
C
25
°
C
40
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001
0
20
40
60
80
I
C
, COLLECTOR CURRENT (mA)
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
°
C
25
°
C
-25
°
C
T
A
= -25
°
C
25
°
C
I
C
/I
B
= 10
Figure 5. Output Current versus Input Voltage
75
°
C
25
°
C
T
A
= -25
°
C
100
10
1
0.1
0.01
0.001
0
1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 6. Input Voltage versus Output Current
50
0
10
20
30
40
4
3
1
2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
75
°
C
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
MUN2211T1 Series
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series6/11
TYPICAL ELECTRICAL CHARACTERISTICS MUN2212T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
°
C
25
°
C
-25
°
C
100
10
1
100
75
°
C
25
°
C
100
0
V
in
, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001
2
4
6
8
10
T
A
= -25
°
C
0
I
C
, COLLECTOR CURRENT (mA)
100
V
O
= 0.2 V
T
A
= -25
°
C
75
°
C
10
1
0.1
10
20
30
40
50
25
°
C
Figure 11. Input Voltage versus Output Current
0.001
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
25
°
C
I
C
/I
B
= 10
0.01
0.1
1
40
I
C
, COLLECTOR CURRENT (mA)
0
20
60
80
50
0
10
20
30
40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
T
A
= -25
°
C
75
°
C
MUN2211T1 Series
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series7/11
TYPICAL ELECTRICAL CHARACTERISTICS MUN2213T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN
Figure 12. V
CE(sat)
versus I
C
0
2
4
6
8
10
100
10
1
0.1
0.01
0.001
V
in
, INPUT VOLTAGE (VOLTS)
T
A
= -25
°
C
75
°
C
25
°
C
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 15. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
°
C
25
°
C
-25
°
C
100
10 1
100
Figure 16. Input Voltage versus Output Current
0
20
40
60
80
10
1
0.1
0.01
I
C
, COLLECTOR CURRENT (mA)
T
A
= -25
°
C
25
°
C
75
°
C
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
T
A
= -25
°
C
25
°
C
75
°
C
50
0
10
20
30
40
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
MUN2211T1 Series
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series8/11
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MUN2214T1
10
1
0.1
0
10
20
30
40
50
100
10
1
0
2
4
6
8
10
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8 10 15 20 25 30 35 40 45 50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN
Figure 17. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0
20
40
60
80
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
Figure 18. DC Current Gain
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
Figure 21. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25
°
C
25
°
C
T
A
= 75
°
C
V
CE
= 10
300
250
200
150
100
50
0
2
4
6
8
15 20 40 50 60 70 80 90
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
T
A
= -25
°
C
25
°
C
75
°
C
I
C
/I
B
= 10
75
°
C
25
°
C
T
A
= -25
°
C
V
O
= 5 V
V
O
= 0.2 V
T
A
= -25
°
C
25
°
C
75
°
C
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series9/11
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MUN2236T1
100
1
0.1
0
10
20
30
35
5
100
10
0
5
10
4
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
30
35
40
45
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 22. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0
10
20
30
40
Figure 23. DC Current Gain
0.1
1
100
I
C
, COLLECTOR CURRENT (mA)
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
Figure 26. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
V
CE
= 10 V
1000
100
10
10
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
T
A
= 25
°
C
25
°
C
75
°
C
75
°
C
25
°
C
T
A
= 25
°
C
V
O
= 5 V
V
O
= 0.2 V
T
A
= 25
°
C
25
°
C
75
°
C
V
CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
T
A
= 25
°
C
25
°
C
75
°
C
C
ob
, CAP
ACIT
ANCE (pF)
5
4.5
15
20
25
30
35
40
1
0.1
I
C
, COLLECT
OR CURRENT (mA)
15
25
10
V
in
, INPUT VOL
T
AGE (VOL
TS)
5
15
25
35
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series10/11
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MUN2237T1
100
1
0
10
20
30
40
5
100
10
0
2
4
1.4
1
0.6
0.2
0
0
5
10
15
20
25
30
35
40
45
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 27. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0
10
20
30
40
Figure 28. DC Current Gain
1
100
I
C
, COLLECTOR CURRENT (mA)
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
Figure 31. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
V
CE
= 10 V
1000
100
1
10
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
T
A
= 25
°
C
25
°
C
75
°
C
75
°
C
25
°
C
T
A
= 25
°
C
V
O
= 5 V
V
O
= 0.2 V
T
A
= 25
°
C
25
°
C
75
°
C
V
CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
T
A
= 25
°
C
25
°
C
75
°
C
C
ob
, CAP
ACIT
ANCE (pF)
1.8
6
8
10
12
14
16
1
0.001
I
C
, COLLECT
OR CURRENT (mA)
15
25
10
V
in
, INPUT VOL
T
AGE (VOL
TS)
5
15
25
35
10
1.6
1.2
0.8
0.4
2
0.1
0.01
35
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series11/11
MUN2211T1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
V
CC
ISOLATED
LOAD
FROM
µ
P OR
OTHER LOGIC
+12 V
Figure 33. Open Collector Inverter:
Inverts the Input Signal
Figure 34. Inexpensive, Unregulated Current Source
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