LESHAN RADIO COMPANY, LTD.
O41/5
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
2222
2222A
Unit
CollectorEmitter Voltage
V
CEO
30
40
Vdc
CollectorBase Voltage
V
CBO
60
75
Vdc
EmitterBase Voltage
V
EBO
5.0
6.0
Vdc
Collector Current -- Continuous
I
C
600
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25°C
Derate above 25°C
1.8
mW/°C
Thermal Resistance, Junction to Ambient
R
JA
556
°C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4
mW/°C
Thermal Resistance, Junction to Ambient
R
JA
417
°C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°C
DEVICE MARKING
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P;
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
MMBT2222
V
(BR)CEO
30
--
Vdc
(I
C
= 10 mAdc, I
B
= 0)
MMBT2222A
40
CollectorBase Breakdown Voltage
MMBT2222
V
(BR)CBO
60
--
Vdc
(I
C
= 10
µ
Adc, I
E
= 0)
MMBT2222A
75
EmitterBase Breakdown Voltage
MMBT2222
V
(BR)EBO
5.0
--
Vdc
(I
E
= 10
µ
Adc, I
C
= 0)
MMBT2222A
6.0
Collector Cutoff Current
MMBT2222A
I
CEX
--
10
nAdc
( V
CE
= 60 Vdc, I
EB(off)
= 3.0Vdc)
Collector Cutoff Current
I
CBO
µ
Adc
(V
CB
= 50 Vdc, I
E
= 0)
MMBT2222
0.01
(V
CB
= 60 Vdc, I
E
= 0)
MMBT2222A
0.01
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125°C)
MMBT2222
10
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125°C)
MMBT2222A
10
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
MMBT2222A
I
EBO
--
100
nAdc
Base Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
MMBT2222A
I
BL
--
20
nAdc
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
3
2
MMBT2222LT1
MMBT2222ALT1
CASE 31808, STYLE 6
SOT23 (TO236AB)
2
EMITTER
3
COLLECTOR
1
BASE
LESHAN RADIO COMPANY, LTD.
O42/5
MMBT2222LT1
MMBT2222ALT1
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
35
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
50
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
75
--
(I
C
= 10 mAdc, V
CE
= 10 Vdc,T
A
= 55°C )
MMBT2222A only
35
--
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (3)
100
300
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (3)
50
(I
C
= 500 mAdc, V
CE
= 10 Vdc)(3)
MMBT2222
30
MMBT2222A
40
--
CollectorEmitter Saturation Voltage(3)
V
CE(sat)
Vdc
(I
C
= 150 mAdc, I
B
= 15 mAdc)
MMBT2222
0.4
MMBT2222A
0.3
(I
C
= 500mAdc, I
B
= 50 mAdc)
MMBT2222
1.6
MMBT2222A
1.0
BaseEmitter Saturation Voltage
V
BE(sat)
Vdc
(I
C
= 150 mAdc, I
B
= 15 mAdc)
MMBT2222
1.3
MMBT2222A
0.6
1.2
(I
C
= 500 mAdc, I
B
= 50 mAdc)
MMBT2222
2.6
MMBT2222A
2.0
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product(4)
MMBT2222
f
T
250
MHz
(I
C
= 20mAdc, V
CE
= 20Vdc, f = 100MHz)
MMBT2222A
300
Output Capacitance(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
8.0
pF
Input Capacitance
MMBT2222
C
ibo
30
pF
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
MMBT2222A
25
Input Impedance(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz) MMBT2222A
h
ie
2.0
8.0
k
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
MMBT2222A
0.25
1.25
Voltage Feedback Ratio(V
CE
=10 Vdc, I
C
= 1.0mAdc, f =1.0kHz) MMBT2222A
h
re
-
8.0
X 10
4
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
MMBT2222A
--
4.0
SmallSignal Current Gain(V
CE
=10Vdc,I
C
=1.0mAdc, f=1.0kHz) MMBT2222A
h
fe
50
300
--
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
MMBT2222A
75
375
Output Admittance(V
CE
=10 Vdc, I
C
= 1.0 mAdc,f =1.0 kHz) MMBT2222A
h
oe
5.0
35
µ
mhos
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
MMBT2222A
25
200
Curren Base Time Comstant
(V
CB
= 20 Vdc, I
E
= 20 mAdc, f = 31.8 MHz)
MMBT2222A
rb, C
C
150
ps
Noise Figure(V
CE
=10Vdc, I
C
=100
µ
Adc, R
S
=1.0k
, f =1.0kHz) MMBT2222A
NF
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, V
EB(off)
= 0.5 Vdc
t
d
--
10
Rise Time
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
r
--
25
ns
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc
t
s
--
225
ns
Fall Time
I
B1
= I
B2
= 15 mAdc)
t
f
--
60
3. Pulse Test: Pulse Width <300
µ
s, Duty Cycle <2.0%.
4.f
T
is defined as the frequency at which h
fe
extrapolates to unity.
LESHAN RADIO COMPANY, LTD.
O43/5
MMBT2222LT1
MMBT2222ALT1
Figure 1. TurnOn Time
Scope rise time < 4.0ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
1.0 k
+30 V
200
C
S
*< 10 pF
1.0 k
+30 V
200
C
S
* < 10 pF
1N914
+ 16 V
14 V
< 20 ns
<2.0 ns
2.0V
+ 16 V
Figure 2. TurnOff Time
1.0 to 100
µ
s,
DUTY CYCLE ~ 2%
SWITCHING TIME EQUIVALENT TEST CIRCUITS
0
0
1.0 to 100
µ
s,
DUTY CYCLE ~ 2%
4.0 V
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
I
B
, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
h
FE
, DC CURRENT GAIN
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
20
300
500
700
1.0k
1000
700
500
300
200
100
70
50
30
20
10
0.005
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
1.0
0.8
0.6
0.4
0.2
0
V
CE
= 10 V
V
CE
=1.0 V
T
J
= +125°C
+25°C
55°C
T
J
= 25°C
500mA
100mA
10 mA
I
C
=1.0 mA
~
~
LESHAN RADIO COMPANY, LTD.
O44/5
MMBT2222LT1
MMBT2222ALT1
t , TIME (ns)
t , RISE TIME (ns)
V
CC
= 30V
I
C
/ I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
r
@V
CC
= 30V
t
d
@V
EB(off)
= 2.0V
t
d
@V
EB(off)
=0
I
C
/I
B
= 10
T
J
= 25°C
5.0 7.0
10
20
30
50
70
100
200
300
500
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
100
70
50
30
20
10
7.0
5.0
t '
s
= t
s
1/8 t
f
t
f
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Turn - Off Time
I
C
, COLLECTOR CURRENT (mA)
Figure 5. TurnOn Time
NF, NOISE FIGURE (dB)
R
S
, SOURCE RESISTANCE (k
)
Figure 8. Source Resistance Effects
NF, NOISE FIGURE (dB)
f = 1.0 kHz
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0 10
20
50
100
10
8
6
4
2
0
50
100
200
500
1.0k
2.0k
5.0k
10k
20k
50k
100k
f , FREQUENCY (kHz)
Figure 7. Frequency Effects
I
C
=50
µ
A
100
µ
A
500
µ
A
1.0 mA
I
C
= 1.0 mA, R
S
= 150
I
C
= 500
µ
A, R
S
= 200
I
C
= 100
µ
A, R
S
= 2.0 k
I
C
= 50
µ
A, R
S
= 4.0 k
R
S
= OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
10
8
6
4
2
0
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Current Gain Bandwidth Product
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
V
CE
= 20 V
T
J
= 25°C
C
eb
C
cb
1.0
2.0
3.0
5.0
7.0
210
20
30
50
70
100
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
30
20
10
7.0
5.0
3.0
2.0
500
300
200
100
70
50
f
T
,CURRENT GAIN BANDWIDTH PRODUCT (MHz)
CAP
ACIT
ANCE (pF)
5.0 7.0
10
20
30
50
70
100
200
300
500
LESHAN RADIO COMPANY, LTD.
O45/5
MMBT2222LT1
MMBT2222ALT1
I
C
, COLLECTOR CURRENT (mA)
Figure 11. "On" Voltages
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
V
,
VOL
T
AGE ( VOL
TS )
COEFFICIENT (mV/ °C)
T
J
= 25°C
R
VC
for V
CE(sat)
V
BE(sat)
@ I
C
/I
B
=10
V
CE(sat)
@ I
C
/I
B
=10
V
BE(on)
@ V
CE
=10 V
R
VB
for V
BE
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50 100
200
500 1.0k
10
0.8
0.6
0.4
0.2
0
+0.5
0
0.5
1.0
1.5
2.0
2.5
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
500
1.0 V
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