LESHAN RADIO COMPANY, LTD.
G71/2
1
3
2
Dual Series Switching Diode
BAV99LT1
CASE 31808, STYLE 11
SOT23 (TO236AB)
3
CAHODE/ANODE
1
ANODE
2
CATHODE
DEVICE MARKING
BAV99LT1 = A7
MAXIMUM RATINGS
(EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
70
Vdc
Forward Current
I
F
215
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
V
RRM
70
V
Average Rectified Forward Current (1)
I
F(AV)
715
mA
(averaged over any 20 ms period)
Repetitive Peak Forward Current
I
FRM
450
mA
NonRepetitive Peak Forward Current
I
FSM
A
t = 1.0
µ
s
2.0
t = 1.0 ms
1.0
t = 1.0 S
0.5
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
D
225
mW
FR5 Board, (1) T
A
= 25°C
Derate above 25°C
1.8
mW/°C
Thermal Resistance Junction to Ambient
R
JA
556
°C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4
mW/°C
Thermal Resistance Junction to Ambient
R
JA
417
°C/W
Junction and Storage Temperature
T
J
, T
stg
65 to +150
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
(BR)
= 100
µ
A)
V
(BR)
70
--
Vdc
Reverse Voltage Leakage Current (V
R
= 70 Vdc)
I
R
--
2.5
µ
Adc
(V
R
= 25 Vdc, T
J
= 150°C)
30
(V
R
= 70 Vdc, T
J
= 150°C)
50
Diode Capacitance
C
D
--
1.5
pF
(V
R
= 0, f = 1.0 MHz)
Forward Voltage (I
F
= 1.0 mAdc)
V
F
715
mVdc
(I
F
= 10 mAdc)
--
855
(I
F
= 50 mAdc)
1000
(I
F
= 150 mAdc)
1250
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc, R
L
= 100
) (Figure 1)
t
rr
--
6.0
ns
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns)
V
FR
--
1.75
V
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
LESHAN RADIO COMPANY, LTD.
G72/2
BAV99LT1
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F
) of 10mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0
10
20
30
40
50
10
1.0
0.1
0.01
0.001
0
2
4
6
8
0.68
0.64
0.60
0.56
0.52
I
F
, FOR
W
ARD CURRENT (mA)
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
I
R
, REVERSE CURRENT (
µ
A)
C
D
,T
O
T
AL CAP
ACIT
ANCE (pF)
T
A
= 85°C
T
A
= 25°C
T
A
= 40°C
T
A
= 55°C
CURVES APPLICABLE TO EACH DIODE
+10 V
2.0 k
820
100
µ
H
0.1
µ
F
D.U.T.
0.1
µ
F
50
OUTPUT
PULSE
GENERATOR
t
r
50
INPUT
SAMPLING
OSCILLOSCOPE
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
INPUT SIGNAL
I
F
V
R
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