Linear Integrated Systems
· 4042 Clipper Court · Fremont, CA 94538 · Tel: 510 490-9160 · Fax: 510 353-0261
FEATURES
HIGH SWITCHING SPEED
t
ON
= 2.0ns
LOW ON RESISTANCE
r
DS(ON)
= 5
LOW GATE NODE CAPACITANCE
C = 25pF
LOW GATE LEAKAGE CAPACITANCE
I
G(ON)
= 0.05µA
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to +150 °C
Operating Junction Temperature
-55 to +125 °C
Maximum Power Dissipation
Continuous Power Dissipation
2
P
D
= 300mW
Maximum Currents
Pulsed Drain Current
3
I
DS
= 1A
Continuous Drain Current
2
I
DS
= 200mA
Maximum Voltages
V
DSO
Drain to Source
+25V
SST823
+22.5V
SST823 +15V
V
SB
Source to Body
SST824
+25V
V
SDO
Source to Drain
SST824 +20V
V
GB
Gate to Body
+30V
SST823 +22.5V
V
GS
Gate to Source
±22.5V
V
DB
Drain to Body
SST824 +30V
V
GD
Gate to Drain
±22.5V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
Breakdown Voltage
25
I
D
= 10µA, V
GS
= V
BS
= 0
BV
DS
Drain to Source
15
V
I
D
= 100nA, V
GS
= V
BS
= -5V
Breakdown Voltage
SST823
15
BV
SD
Source to Drain
SST824
20
V I
S
= 100nA, V
GD
= V
BD
= -5V
Breakdown Voltage
SST823
22.5
BV
DB
Drain to Body
SST824
25
V I
D
= 100nA, V
GB
= 0, Source Open
Breakdown Voltage
SST823
22.5
BV
SB
Source to Body
SST824
25
V I
S
= 100nA, V
GB
= 0, Drain Open
V
GS(OFF)
Cutoff Voltage Gate to Source
0.1
2
V
V
DS
= V
GS
, V
SB
= 0V, I
D
= 10µA
7.5
V
GS
= 5.0V, I
D
= 50mA, V
SB
= 0
r
DS(ON)
On Resistance Drain to Source
4
5.0
V
GS
= 10V, I
D
= 500mA, V
SB
= 0
g
fs
Forward
Transconductance
4
100
120
mmho V
DS
= 15V, I
D
= 200mA
I
D(OFF)
Leakage Current Drain Node
100
nA
V
GS
= V
BS
= -5V, V
DS
= 15V
I
S(OFF)
Leakage Current Source Node
100
nA
V
GD
= V
BD
= -5V, V
DS
= 15V
I
G(OFF)
Leakage Current Gate Node (OFF)
100
nA
V
GB
= 0V, V
GS
= V
GD
= -22.5V
I
G(ON)
Leakage Current Gate Node (ON)
10
µA
V
GB
= 30V, V
GS
= V
GD
= 22.5V
SST823 SST824
HIGH SPEED N-CHANNEL
LATERAL DMOS SWITCH
ZENER PROTECTED
Linear Integrated Systems
1. Body
2. Source
3. Drain
4.
Gate
Linear Integrated Systems
· 4042 Clipper Court · Fremont, CA 94538 · Tel: 510 490-9160 · Fax: 510 353-0261
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. For SOT143 package only.
3. Pulsed @ 80 µs, 1% duty cycle.
4. See test conditions in Electrical Characteristics section.
5. See
Switching
Characteristics and Test Circuit for detail.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any
infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or
patent rights of Linear Integrated Systems.
ELECTRICAL CHARACTERISTICS CONT.
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
C
(GS+GD+GB)
Capacitance Gate Node
25
30
pF
C
(GD+DB)
Capacitance Drain Node
13
15
pF
C
(GS+SB)
Capacitance Source Node
35
40
pF
C
DG
Capacitance Reverse Transfer
3
5
pF
V
DS
= 10V, V
GS
= V
BS
= -15V, f = 1MHz
t
ON
Turn
On
Time
5
2.0
3.0
ns
V
DD
= 10V, V
G(ON)
= 10V,
t
OFF
Turn
Off
Time
5
3.0
4.0
ns
R
L
= 133, R
G
= 51
SWITCHING CHARACTERISTICS
t
d(ON)
t
r
t
OFF
V
GG
V
DD
R
L
TYP TYP TYP
5V 100 <1ns 1ns 3ns
10V 200 <1ns 1ns 3ns
5V
20V 300 <1ns 1ns 3ns
5V 67 <1ns 1ns 3ns
10V 133 <1ns 1ns 3ns
10V
20V 270 <1ns 1ns 3ns
INPUT PULSE
td, tr < 1ns
Pulse Width = 10ns
Rep Rate = 1MHz
SAMPLING SCOPE
t
r
< 360 ps
R
IN
= 1M
C
IN
= 2.0pF
51
R
L
510
V
IN
V
OUT
TO
SCOPE
V
GG
V
DD
TO SCOPE
TEST CIRCUIT
t
d(on)
90%
50%
10%
90%
50%
10%
t
r
t
OFF
0V
0 V
+ V
DD
V
GG
V
IN
V
OUT
SWITCHING WAVEFORMS
SST823
SST211
1 k
R
B
*
1 k
-15V
-15V
15V
Analog Output
±7.5V
Analog Input
±7.5V
15V
V
C
R
B
* Optional Current
Limiting Resistor
V
C
0
5V
Driver
Switch
DRIVER / SWITCH APPLICATION
PACKAGE OPTION
TO-72 PIN LAYOUT
PDF 
ZIP