1999. 11. 30
1/3
SEMICONDUCTOR
TECHNICAL DATA
MPS651
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
VOLTAGE REGULATOR, RELAY,
RAMP DRIVER, INDUSTRIAL USE
FEATURES
High Voltage : V
CEO
=60V(Min.).
High Current : I
C
(Max.)=1A.
High Transition Frequency : f
T
=150MHz(Typ.).
Wide Area of Safe Operation.
Complementary to MPS751.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
100
nA
DC Current Gain
h
FE
(1)
V
CE
=2V, I
C
=50mA
100
-
320
h
FE
(2)
V
CE
=2V, I
C
=1A
30
-
-
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
60
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
0.15
0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=500mA, I
B
=50mA
-
0.85
1.2
V
Transition Frequency
f
T
V
CE
=10V, I
C
=50mA
-
150
-
MHz
Collector Output Capacitanc
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
12
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
DC
I
C
1
A
Pulse
I
CP
2
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : h
FE
(1) Classification Y:100 200 , GR:160 320
1999. 11. 30
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MPS651
Revision No : 2
COLLECTOR OUTPUT CAPACITANCE
3
ob
100
1
COLLECTOR-BASE VOLTAGE V (V)
CB
C - V
DC CURRENT GAIN h
FE
1
COLLECTOR CURRENT I (mA)
C
h - I
f - I
C
COLLECTOR CURRENT I (mA)
1
3
10
100
T
TRANSITION FREQUENCY f (MHz)
10
C
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
COLLECTOR-EMITTER SATURATION
CE(sat)
0.01
300
100
10
5
COLLECTOR CURRENT I (mA)
C
V - I
2
4
6
8
10
12
200
400
600
800
1k
10mA
8mA
6mA
4mA
3mA
2mA
1mA
I =0mA
B
B
I =0mA
2mA
4mA
20mA
30m
A
50
mA
1k
800
600
400
200
1.2
1.0
0.8
0.6
0.4
0.2
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
0
COLLECTOR CURRENT I (mA)
C
6mA
10mA
FE
C
3
10
30
100
300
1k
3k
10
30
50
100
300
500
1k
COMMON EMITTER
Ta=25 C
V =2V
CE
ob
CB
C (pF)
3
5
10
30
50
100
5
10
30
50
COMMON EMITTER
f=1MHz
Ta=25 C
T
C
300
30
30
50
100
300
COMMON EMITTER
Ta=25 C
V =10V
CE
CE(sat)
C
VOLTAGE V (V)
1k
3k
30
0.03
0.05
0.1
0.3
0.5
1
3
5
COMMON EMITTER
Ta=25 C
I /I
=10
C B
1999. 11. 30
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MPS651
Revision No : 2
COLLECTOR POWER DISSIPATION
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0.5
1
3
10
0.01
C
COLLECTOR CURRENT I (A)
30
100
5
50
0.005
0.03
0.05
0.1
0.3
0.5
1
3
5
I
CP
C
I MAX.
DC OPERATION
1msec
10m
se
c
100
m
se
c
1sec
P (mW)
20
40
60
80
100
120
140
160
200
400
600
800
1k
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