1998. 6. 15
1/2
SEMICONDUCTOR
TECHNICAL DATA
MMBTA92/93
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
FEATURES
Complementary to MMBTA42/43.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
MMBTA92
V
CBO
-300
V
MMBTA93
-200
Collector-Emitter
Voltage
MMBTA92
V
CEO
-300
V
MMBTA93
-200
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current
I
C
-500
mA
Emitter Current
I
E
500
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature
T
stg
-55 150
Type Name
Marking
MMBTA92
MMBTA93
Lot No.
YV
Type Name
Lot No.
YW
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base
Breakdown Voltage
MMBTA92
V
(BR)CBO
I
C
=-100 A, I
E
=0
-300
-
-
V
MMBTA93
-200
-
-
Collector-Emitter
Breakdown Voltage
MMBTA92
V
(BE)CEO
I
C
=-1.0mA, I
B
=0
-300
-
-
V
MMBTA93
-200
-
-
DC Current Gain
* h
FE
I
C
=-1.0mA, V
CE
=-10V
25
-
-
I
C
=-10mA, V
CE
=-10V
40
-
-
I
C
=-30mA, V
CE
=-10V
25
-
-
Collector-Emitter Saturation Voltage
* V
CE(sat)
I
C
=-20mA, I
B
=-2.0mA
-
-
-0.5
V
Base-Emitter Saturation Voltage
* V
BE(sat)
I
C
=-20mA, I
B
=-2.0mA
-
-
-0.9
V
Transition Frequency
f
T
V
CE
=-20V, I
C
=-10mA, f=100MHz
50
-
-
MHz
Collector Output
Capacitance
MMBTA92
C
ob
V
CB
=-20V, I
E
=0, f=1MHz
-
-
6.0
pF
MMBTA93
-
-
8.0
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