2003. 7. 21
1/1
SEMICONDUCTOR
TECHNICAL DATA
MMBTA05
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
DRIVER STAGE AMPLIFIER APPLICATIONS.
VOLTAGE AMPLIFIER APPLICATIONS.
FEATURES
Complementary to MMBTA55.
Driver Stage Application of 20 to 25 Watts Amplifiers.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
CEO
V
CE
=60V, I
B
=0
-
-
100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=5mA, I
B
=0
60
-
-
V
DC Current Gain
h
FE
(1)
V
CE
=1V, I
C
=10mA
100
-
-
h
FE
(2)
V
CE
=1V, I
C
=100mA
100
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
-
-
0.25
V
Base-Emitter Voltage
V
BE
V
CE
=1V, I
C
=100mA
-
-
1.2
V
Transition Frequency
f
T
V
CE
=1V, I
C
=10mA
80
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
10
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
500
mA
Emitter Current
I
E
-500
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature
T
stg
-55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
Type Name
Marking
Lot No.
ACX
PDF 
ZIP