2003. 3. 11
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SEMICONDUCTOR
TECHNICAL DATA
KTX312T
EPITAXIAL PLANAR PNP TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 1
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
MILLIMETERS
A
B
D
E
TSV
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
B
E
C
L
H
J
J
I
2
3
1
5
4
+
_
+
_
+
_
+
_
+
_
1. D ANODE
2. Q BASE
3. Q EMITTER
4. Q COLLECTOR
5. D CATHODE
1
1
1
1
1
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
25
V
Reverse Voltage
V
R
20
V
Average Forward Current
I
O
1.0
A
Non-Repetitive Peak Surge current
I
FSM
3
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55~125
EQUIVALENT CIRCUIT (TOP VIEW)
1
D1
Q1
2
3
5
4
* Package mounted on a ceramic board (600
0.8 )
Type Name
Marking
Lot No.
CM
1
2
3
5
4
TRANSISTOR Q
1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1.5
A
I
CP
-3
A
Collector Power Dissipation
P
C
*
0.9
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~125
DIODE D
1
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KTX312T
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q
1
DIODE D
1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Forward Voltage
V
F
I
F
=1.0A
-
0.4
0.45
V
Reverse Current
I
R
V
R
=20V
-
-
200
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-12V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A, I
E
=0
-20
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-20
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A, I
C
=0
-5
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-750mA, I
B
=-15mA
-
-120
-180
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-750mA, I
B
=-15mA
-
-0.85
-1.2
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-100mA
200
-
560
Transition Frequency
f
T
V
CE
=-2V, I
C
=-300mA
-
210
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz
-
30
-
pF
Swiitching
Time
Turn-On Time
t
on
I
B1
B2
I
INPUT
OUTPUT
50
220µF
PW=20µs
DC 1%
470µF
R
V
B
R
L
R
BE
V =5V
CC
V =-5V
-20I =20I =I =-750mA
B1
B2 C
<
=
-
50
-
nS
Storage Time
t
stg
-
90
-
Fall Time
t
f
-
15
-
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KTX312T
Revision No : 1
REVERSE CURRENT I (mA)
R
0.1m
0
REVERSE VOLTAGE V (V)
R
I - V
R
R
0.1
0.2
0.3
0.4
0.5
1m
10m
100m
1
FORWARD VOLTAGE V (V)
FORWARD CURRENT I (A)
F
F
I - V
F F
Ta=125 C
Ta=75 C
Ta=25 C Ta=-25 C
0
10
2
0.1µ
1µ
10µ
100µ
10
1
10
20
30
40
Ta=125 C
Ta=75 C
Ta=25 C
Ta=-25 C
D (DIODE)
1
Q (PNP TRANSISTOR)
1
V - I
C
COLLECTOR CURRENT I (A)
C
COLLECTOR CURRENT I (A)
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
0
I - V
C
CE
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-0.2
-0.4
-0.6
-1.0
-0.8
-1.2
-1.4
-1.8
-1.6
-2.0
CE(sat)
C
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (A)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
I =0mA
-2mA
-4mA
-6mA
-8mA
-10mA
-20mA
-50mA
-30mA
-40mA
B
-10
-30
-50
-100
-300
-1K
-500
VOLTAGE V (mV)
-0.01
-0.03
-0.1
-1
-3
-0.3
-0.01
-0.03
-0.1
-1
-3
-0.3
Ta=75 C
I /I =20
C B
I /I =50
C B
Ta=75 C
Ta=25 C
Ta=-25 C
Ta=-25 C
Ta=25 C
30
1K
h - I
FE
C
50
100
300
500
-0.01
-0.03
-0.1
-1
-3
-0.3
Ta=-25 C
V =-2V
CE
Ta=75 C
Ta=25 C
COLLECTOR-EMITTER SATURATION
-5
CE(sat)
COLLECTOR CURRENT I (A)
C
V - I
CE(sat)
C
VOLTAGE V (mV)
-10
-30
-50
-100
-300
-500
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KTX312T
Revision No : 1
C
COLLECTOR CURRENT I (A)
BASE-EMITTER VOLTAGE V (V)
0
BE
0
I - V
C
BE
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0.1
-0.2
-0.3
-0.5
-0.4
-0.6
-0.7
-0.9
-0.8
-1.0
V - I
C
COLLECTOR CURRENT I (A)
BE(sat)
C
BE(sat)
BASE-EMITTER SATURATION
-0.1
-0.3
-0.5
-1
-3
-10
-5
VOLTAGE V (V)
-0.01
-0.03
-0.1
-1
-3
-0.3
I /I =50
Ta=75 C
Ta=25 C
Ta=-25 C
C B
Ta=75
C
Ta=25 C Ta=-25
C
V =-2V
CE
COLLECTOR OUTPUT CAPACITANCE
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
TRANSITION FREQUENCY f (MHz)
T
COLLECTOR CURRENT I (A)
C
C (pF)
C - V
ob
CB
30
1K
f - I
T
C
50
100
300
500
-0.01
-0.03
-0.1
-1
-3
-0.3
V =-2V
f=1MHz
CE
3
100
5
10
30
50
-1
-3
-5
-30
-10
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