1999. 6. 24
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD2061
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH VOLTAGE APPLICATION
TV, MONITOR VERTICAL OUTPUT APPLICATION
DRIVER STAGE APPLICATION
COROR TV CLASS B SOUND OUTPUT APPLICATION
FEATURES
High Breakdown Voltage : V
CEO
=180V(Min.)
High Transition Frequency : f
T
=100MHz(Typ.)
High Current : I
C(max)
=2A.
Complementary to KTB1369.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:70 140 , Y:120 240
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
200
V
Collector-Emitter Voltage
V
CEO
180
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
2
A
Base Current
I
B
0.2
A
Collector Power Dissipation (Tc=25 )
P
C
20
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=200V, I
E
=0
-
-
1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
1.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
180
-
-
V
DC Current Gain
h
FE
V
CE
=10V, I
C
=400mA
70
-
240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
-
1.0
V
Base-Emitter Voltage
V
BE
V
CE
=5V, I
C
=500mA
-
-
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=400mA
-
100
-
MHz
1999. 6. 24
2/2
KTD2061
Revision No : 2
COLLECOTR CURRENT I (A)
C
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
COLLECTOR POWER DISSIPATION P (W)
0
C
0
CASE TEMPERATURE Ta ( C)
Pc - Ta
10
DC CURRENT GAIN h
FE
0.3
0.1
0.03
0.01
COLLECTOR CURRENT I (A)
C
h - I
V ,V - I
C
COLLECTOR CURRENT I (A)
BE(sat)
SATURATION VOLTAGE V ,V (V)
COLLECTOR CURRENT I (A)
5
COLLECTOR-EMITTER VOLTAGE V (V)
10
30
100
CE
C
0.1
SAFE OPERATING AREA
FE
C
1
3
10
30
50
100
300
500
1k
V =10V
CE
CE(sat)
BE(sat)
C
CE(sat)
50
300
0.3
0.5
1
3
5
10
NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE
DERATED UNEARLY
WITH INCREASE IN
TEMPERATURE
SINGLE
S/B limitation
*
Thermal l
im
itation
S/B
limit
ation
DC
1mS
*
50
100
150
10
20
30
40
0
0
0.01
0.03
0.1
0.3
0.01
10
20
30
40
50
0.2
0.4
0.6
0.8
1.0
I =8mA
B
I =7mA
B
I =6mA
B
I =5mA
B
I =4mA
B
I =3mA
B
I =2mA
B
I =1mA
B
1
3
10
0.03
0.05
0.1
0.3
0.5
1
3
5
10
V
BE(sat)
CE(sat)
V
I =10I
C
B
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