1999. 11. 16
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SEMICONDUCTOR
TECHNICAL DATA
KTD1047
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 1
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTB817.
Recommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
C
G
L
K
H
A
D
B
E
F
I
d
P
P
T
M
J
Q
1
2
3
A
15.9 MAX
MILLIMETERS
DIM
B
4.8 MAX
C
20.0 0.3
D
2.0 0.3
d
1.0+0.3/-0.25
E
2.0
F
1.0
G
3.3 MAX
H
9.0
I
4.5
J
2.0
K
1.8 MAX
L
20.5 0.5
P
5.45 0.2
Q
3.2 0.2
T
0.6+0.3/-0.1
2.8
M
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification O:60 120, Y:100 200
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
160
V
Collector-Emitter Voltage
V
CEO
140
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
DC
I
C
12
A
Pulse
I
CP
15
Collector Power Dissipation (Tc=25 )
P
C
100
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=80V, I
E
=0
-
-
0.1
mA
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
0.1
mA
DC Current Gain
h
FE
(1) (Note)
V
CE
=5V, I
C
=1A
60
-
200
h
FE
2
V
CE
=5V, I
C
=6A
20
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=5A, I
B
=0.5A
-
-
2.5
V
Base-Emitter Voltage
V
BE(ON)
V
CE
=5V, I
C
=1A
-
-
1.5
V
Transition Frequency
f
T
V
CE
=5V, I
C
=1A
-
15
-
MHz
Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
210
-
pF
Turn On Time
t
on
V
CC
=20V
I
C
=1A=10 I
B1
=-10 I
B2
R
L
=20
-
0.26
-
S
Fall Time
t
f
-
0.68
-
Storage Time
t
stg
-
6.88
-
1999. 11. 16
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KTD1047
Revision No : 1
0
C
BASE-EMITTER VOLTAGE V (V)
I - V
COLLECTOR CURRENT I (A)
BE
0
I - V
C
CE
CE
COLLECTOR EMITTER VOLTAGE V (V)
0
C
0
COLLECTOR CURRENT I (A)
2
V - I
BE(sat)
C
C
COLLECTOR CURRENT I (A)
0.1
0.3
3
1
0.1
BE(sat)
BASE-EMITTER SATURATION
DC CURRENT h
1
FE
3
1
0.3
0.1
COLLECTOR CURRENT I (A)
C
C
FE
h - I
TRANSITION FREQUENCY f (MHz)
1
T
1
3
0.3
0.1
COLLECTOR CURRENT I (A)
C
C
T
f - I
10
20
30
40
50
4
6
8
10
240mA
200mA
160mA
120mA
80mA
40mA
20mA
I =0
B
COLLECTOR CURRENT I (A)
V - I
CE(sat)
C
COLLECTOR-EMITTER VOLTAGE
0.1
0.01
0.3
1
C
10
30
100
3
5
10
30
50
100
300
500
1k
V (V)
3
5
10
0.03
0.05
0.1
0.3
0.5
1
3
5
10
V =5V
CE
I /I =10
C B
CE(sat)
VOLTAGE V (V)
10
0.3
0.5
1
3
5
10
I /I =10
C B
BE
C
0.4
0.8
1.2
1.6
1
2
3
4
5
6
7
8
V =5V
CE
10
3
5
10
30
50
100
V =5V
CE
0.5
0.5
5
0.5
5
1999. 11. 16
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KTD1047
Revision No : 1
COLLECTOR CURRENT I (A)
C
0.1
30
10
3
1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
COLLECTOR-BASE VOLTAGE V (V)
C (pF)
1
ob
10
3
3 0
100
C - V
ob
CB
CB
10
30
50
100
300
500
1k
f=1MHz
100
300
1k
0.3
0.5
1
3
5
10
30
50
100
1mS
10mS
100m
S
DC
COLLECTOR OUTPUT CAPACITANCE
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