2003. 3. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC9014S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(I
C
=0.1mA)/h
FE
(I
C
=2mA)=0.95(Typ.).
Low Noise :NF=1dB(Typ.) at f=1kHz.
Complementary to KTC9015S.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification B:100 300, C:200 600, D:400 1000
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
50
nA
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
100
nA
DC Current Gain
h
FE
(Note)
V
CE
=5V, I
C
=1mA
100
-
1000
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
-
0.1
0.25
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1mA, f=100MHz
60
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
2.0
3.5
pF
Noise Figure
NF
V
CE
=6V, I
C
=0.1mA, Rg=10k , f=1kHz
-
1.0
10
dB
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Emitter Current
I
E
-150
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* P
C
: Package Mounted On 99.5% Alumina (10 8 0.6 )
h Rank
Type Name
Marking
Lot No.
BD
FE
2003. 3. 25
2/2
KTC9014S
Revision No : 1
CE(sat)
COLLECTOR CURRENT I (mA)
V - I
COLLECTOR-EMITTER SATURATION
C
I - V
(LOW VOLTAGE REGION)
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
1
40
C
0
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
FE
500
COLLECTOR CURRENT I (mA)
C
C
FE
h - I
2
3
4
5
6
80
120
160
240
200
I =0.2mA
0
0.5
1.0
6.0
5.0
3.0
2.0
B
COMMON EMITTER
Ta=25 C
0.1
0.3
1
3
10
300
30
100
10
30
50
100
300
COMMON EMITTER
Ta =100 C
Ta =-25 C
Ta =25 C
V =6V
CE
CE
V =1V
CE
V =10V
C
VOLTAGE V (V)
CE(sat)
Ta =100 C
Ta =-2
5 C
Ta
=25 C
Ta =100 C
Ta =-25 C
Ta =25 C
Ta =25 C
TRANSITION FREQUENCY f (MHz)
T
1K
500
EMITTER CURRENT I (mA)
E
E
T
f - I
-0.1
-0.3
-1
-3
-10
-300
-30
-100
10
30
50
100
300
COMMON EMITTER
0.5
0.1
0.3
1
3
10
300
30
100
0.01
0.03
0.05
0.1
0.3
COMMON EMITTER
BASE CURRENT I (
µ
A)
B
BASE-EMITTER VOLTAGE V (V)
BE
I - V
B
BE
COMMON EMITTER
V =6V
CE
I /I =10
C B
COLLECTOR POWER DISSIPATION
Pc (mW)
0
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
25
50
75
100
125
150
175
100
200
300
400
500
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
Ta=25 C
1
2
1
2
0
0.3
1
3
10
30
100
300
1K
2K
0.2
0.4
0.6
0.8
1.0
1.2
PDF 
ZIP