1998. 6. 15
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC4379
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
FEATURES
Low Saturation Voltage
: V
CE(sat)
=0.5V(Max.) (I
C
=1A)
High Speed Switching Time : t
stg
=1.0 S(Typ.)
P
C
=1 2W (Mounted on Ceramic Substrate)
Small Flat Package.
Complementary to KTA1666.
MAXIMUM RATING (Ta=25 )
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
1
2
3
2. COLLECTOR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F
F
D
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1 : Pulse width 300 S, Duty Cycle 1%
Note 2 : h
FE
(1) Classification 0:70 140, Y:120 240
P
C
* : KTC4379 mounted on ceramic substrate (250mm
2
x0.8t)
U
Type Name
h Rank
FE
Lot No.
Marking
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
50
-
-
V
DC Current Gain
h
FE
(1) (Note2) V
CE
=2V, I
C
=0.5A (Note 1)
70
-
240
h
FE
(2)
V
CE
=2V, I
C
=1.5A (Note 1)
40
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=1A, I
B
=0.05A (Note 1)
-
-
0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=1A, I
B
=0.05A (Note 1)
-
-
1.2
V
Transition Frequency
f
T
V
CE
=2V, I
C
=0.5A
-
120
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
30
-
pF
Switching
Time
Turn-on Time
t
on
I
B1
30
B1
I
30V
I
B2
I
B2
20
µS
I =-I =0.05A
1%
B1
B2
OUTPUT
DUTY CYCLE
INPUT
<
=
-
0.1
-
S
Storage Time
t
stg
-
1.0
-
Fall Time
t
f
-
0.1
-
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
2
A
Base Current
I
B
0.4
A
Collector Power Dissipation
P
C
500
mW
P
C
*
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
1998. 6. 15
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KTC4379
Revision No : 2
CE
0
COLLECTOR-EMITTER VOLTAGE
COLLECTOR-EMITTER VOLTAGE
CE
COLLECTOR CURRENT I (A)
C
C
CE
V - I
10
DC CURRENT GAIN h
FE
300
100
30
10
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR CURRENT I (A)
C
C
CE
V - I
h - I
COLLECTOR CURRENT I (A)
COLLECTOR-EMITTER VOLTAGE
0
0
CE
CE
V - I
C
C
V (V)
0.4
0.8
1.2
1.6
2.0
0.4
0.8
1.2
1.6
COMMON EMITTER
Ta=100 C
I =3mA
B
5
10
20
30
40
50
V (V)
COMMON EMITTER
Ta=25 C
0
0
0.4
0.8
1.2
1.6
0.4
0.8
I =5mA
B
1.2
10
2.0
30
1.6
40
20
V (V)
0.4
0.8
1.2
1.6
2.0
0.4
0.8
1.2
1.6
COMMON EMITTER
Ta=-55 C
I =5mA
B
10
20
30
40
50
FE
C
1k
3k
30
50
100
300
500
1k
COMMON EMITTER
V =2V
CE
Ta=100 C
Ta=25 C
Ta=-55 C
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
0.05
0.03
0.01
0.1
10
30
Ta=-55 C
Ta=25 C
100
300
C
1k
3k
COMMON EMITTER
1
CE(sat)
0.3
0.5
Ta=1
00 C
V - I
CE(sat)
I /I =20
C
C
VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.3
10
0.1
BE(sat)
3
1
0.5
5
10
Ta=25 C
Ta=-55 C
100
30
300
C
1k
3k
C
I /I =20
COMMON EMITTER
BE(sat)
V - I
Ta=100 C
C B
B
1998. 6. 15
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KTC4379
Revision No : 1
COLLECTOR CURRENT I (A)
0
C
0.2
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
COLLECTOR CURRENT I (mA)
1
C
3
1
0.3
0.1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
0.6
0.8
1.0
1.2
1.4
1.6
0.2
0.4
0.6
0.8
1.0
COMMON EMITTER
V =2V
CE
Ta=1
00
C
Ta=25 C
Ta=-55 C
10
30
100
3
5
10
30
50
100
300
500
1k
3k
5k
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINERALY WIHT INCREASE
IN TEMPERATURE
*
I MAX(PULSE)
C
C
I MAX(CONTINUOUS)
*
DC
O
PE
RAT
IO
N
1s
100ms
10m
s
1ms
*
*
*
*
V MAX.
CEO
C
COLLECTOR POWER DISSIPATION P (W)
0
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
20
40
60
80
100
120
140
160
0.2
0.4
0.6
0.8
1.0
1.2
MOUNTED ON CERAMIC
SUBSTRATE
(250mm
x0.8t)
Ta=25 C
2
1
2
1
2
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