1998. 6. 15
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SEMICONDUCTOR
TECHNICAL DATA
KTC4372
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 2
HIGH VOLTAGE SWITCHING APPLICATION.
FEATURES
High Voltage : V
CEO
=150V.
High Transition Frequency : f
T
=120MHz(Typ.).
1W (Monunted on Ceramic Substrate).
Small Flat Package.
Complementary to KTA1660.
MAXIMUM RATING (Ta=25 )
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
1
2
3
2. COLLECTOR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F
F
D
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
200
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
50
mA
Base Current
I
B
10
mA
Collector Power Dissipation
P
C
500
mW
P
C
*
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : h
FE
Classification O:70 140, Y:120 240
P
C
* : KTC4372 mounted on ceramic substrate (250mm
2
x0.8t)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=200V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=5V, I
C
=10mA
70
-
240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
-
0.5
V
Base-Emitter Voltage
V
BE
V
CE
=5V, I
C
=30mA
-
-
1.0
V
Transition Frequency
f
T
V
CE
=30V, I
C
=10mA
-
120
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
3.5
5.0
pF
A
Type Name
h Rank
FE
Lot No.
Marking
1998. 6. 15
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KTC4372
Revision No : 2
COLLECTOR CURRENT I (mA)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
10
DC CURRENT GAIN h
FE
500
100
30
1
0.5
COLLECTOR CURRENT I (mA)
C
h - I
V - I
C
COLLECTOR CURRENT I (mA)
0.5
1
30
100
0.05
CE(sat)
COLLECTOR-EMITTER SATURATION
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
h - I
V - I
C
COLLECTOR CURRENT I (mA)
CE(sat)
COLLECTOR-EMITTER SATURATION
2
4
6
8
10
12
10
20
30
40
50
50
40
30
20
10
1.2
1.0
0.8
0.6
0.4
0.2
I - V
C
BE
BE
BASE-EMITTER VOLTAGE V (V)
0
C
0
COLLECTOR CURRENT I (mA)
COMMON EMITTER
Ta=25 C
2m
A
1m
A
I =100
ľA
200
ľA
300
ľA
500
ľA
B
FE
C
V =5V
CE
Ta=100 C
Ta=25 C
CE(sat)
C
VOLTAGE V (V)
10
3
5
50
0.1
0.3
0.5
1
3
Ta=25 C
I /I
=
20
C
B
B
C
I /I
=1
0
I /I
=5
C
B
CE(sat)
C
VOLTAGE V (V)
COMMON EMITTER
I /I =10
C B
Ta=
100 C
Ta=
100
C
Ta=2
5 C
FE
C
10
3
30
50
100
300
COMMON EMITTER
COMMON EMITTER
V =5V
CE
COMMON EMITTER
COMMON EMITTER
Ta=25 C
V
=2
V
CE
V =10V
CE
V =5V
CE
Ta=-25 C
Ta=
25 C
Ta=
-25
C
Ta=
-2
5
C
10
500
100
3
1
0.5
10
30
30
50
100
300
0.5
1
3
100
0.05
10
30
0.1
0.3
0.5
1
3
1998. 6. 15
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KTC4372
Revision No : 2
C
COLLECTOR POWER DISSIPATION P (W)
0
10
COLLECTOR CURRENT I (mA)
1
C
200
500
10
3
1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
SAFE OPERATING AREA
f - I
E
EMITTER CURRENT I (mA)
-0.6 -1
-30
-100
T
TRANSITION FREQUENCY f (MHz)
T
E
-10
-3
10
30
50
100
300
500
COMMON EMITTER
Ta=25 C
V =30V
CE
CE
V =10V
CE
V =2V
100
30
3
5
30
50
100
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX(PULSE)
C
*
C
I MAX(CONTINUOUS)
100mS
*
*
50
0mS
DC O
PER
ATIO
N
20
40
60
80
100
120
140
160
0.2
0.4
0.6
0.8
1.0
1.2
MOUNTED ON CERAMIC
SUBSTRATE
(250mm
x0.8t)
Ta=25 C
2
1
2
1
2
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