2002. 7. 16
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SEMICONDUCTOR
TECHNICAL DATA
KTC4370/A
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : f
T
=100MHz(Typ.).
Complementary to KTA1659/A.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:70~140, Y:120~240
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
KTC4370
V
CBO
160
V
KTC4370A
180
Collector-Emitter
Voltage
KTC4370
V
CEO
160
V
KTC4370A
180
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
1.5
A
Base Current
I
B
0.15
A
Collector Power Dissipation (Tc=25 )
P
C
20
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=160V, I
E
=0
-
-
1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
1.0
A
Collector-Emitter
Breakdown Voltage
KTC4370
V
(BR)CEO
I
C
=10mA, I
B
=0
160
-
-
V
KTC4370A
180
-
-
DC Current Gain
h
FE
(Note)
V
CE
=5V, I
C
=100mA
70
-
240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
-
1.5
V
Base-Emitter Voltage
V
BE
V
CE
=5V, I
C
=500mA
-
-
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=100mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
25
-
pF
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KTC4370/A
Revision No : 2
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
4
20
2.0
C
0
COLLECTOR CURRENT I (mA)
0.4
h - I
FE
C
C
COLLECTOR CURRENT I (mA)
10
3
FE
DC CURRENT GAIN h
COLLECTOR-EMITTER SATURATION
CE(sat)
0.03
300
100
10
COLLECTOR CURRENT I (mA)
C
C
CE(sat)
V - I
COLLECTOR CURRENT I (mA)
0
C
0.2
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
C
FE
h - I
8
12
16
1.2
1.6
0.8
COMMON EMITTER
Ta=25 C
I =0mA
B
COMMON EMITTER
V =5V
CE
Ta=100
C
Ta
=2
5 C
Ta=0 C
100
30
300
1K 2K
COMMON EMITTER
Ta=25 C
V =2V
CE
VOLTAGE V (V)
5
30
1K
3K
0.05
0.1
0.3
0.5
1.0
COMMON EMITTER
Ta=25 C
I /I =10
C
B
B
C
I /I
=5
1
2
3
5
12
30
80
140
250
100
5
10
30
50
300
500
V =5V
CE
V =10V
CE
COMMON EMITTER
3
5
10
30
100
50
10
100
30
300
300
500
Tc=25 C
1K 2K
V =5V
V =10V
CE
CE
Ta=100 C
Ta=25 C
Ta=0 C
COLLECTOR CURRENT I (mA)
COMMON EMITTER
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATION
5
10
CE(sat)
I /I =10
Ta=100 C
300
100
30
C
1K
3K
V - I
CE(sat)
C
0.1
0.05
0.3
0.5
1.0
3.0
5.0
25
0
C B
0.4
0.6
0.8
1.0
1.2
1.4
200
400
600
800
1K
1.2K
1.4K
1.6K
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KTC4370/A
Revision No : 2
C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
ob
1
COLLECTOR OUTPUT CAPACITANCE
ob
CB
C (pF)
3
5
10
30
50
100
I =0
f=1MHz
Tc=25 C
E
0.5
1
3 5
10
30 50 100
200
f - I
C
COLLECTOR CURRENT I (mA)
T
TRANSITION FREQUENCY f (MHz)
T
C
10
30
50
100
300
500
COMMON EMITTER
Tc=25 C
V =2V
CE
2
5
10
30 50 100
300 500
V
=5V
CE
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
3
5
10
30
0.01
C
COLLECTOR CURRENT I (A)
I MAX(PULSED)
C
*
C
I MAX
V MAX.
CEO
100
300
50
0.03
0.05
0.1
0.3
0.5
1
3
5
SINGLE
NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE
DERATED LINEARLY WITH
INCREASE IN TEMPERATURE
*
(CONTINUOUS)
DC OPERATION
*
500ms
100ms
*
10ms
* *
1ms
THERMAL
LIMITED
S/B LIMITED
V MAX=160V
KTC4370
CEO
V MAX=180V
KTC4370A
CEO
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR POWER DISSIPATION P (W)
0
0
Pc - Ta
20
40
60
80
100
5
10
15
20
140
120
160
C
25
Tc=Ta
INFINITE HEAT SINK
NO HEAT SINK
1
1
2
2
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