2001. 11. 30
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SEMICONDUCTOR
TECHNICAL DATA
KTC4077
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
High Voltage : V
CEO
=120V.
Excellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
High h
FE
: h
FE
=200 700.
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTA2017.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
1. EMITTER
2. BASE
3. COLLECTOR
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42 0.10
N
0.10 MIN
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification GR(6):200 400 BL(8):350 700
h Rank
Type Name
Marking
D
FE
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
mA
Base Current
I
B
20
mA
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=120V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2mA
200
-
700
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
-
0.3
V
Transition Frequency
f
T
V
CE
=6V, I
C
=1mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
4.0
-
pF
Noise Figure
NF
V
CE
=6V, I
C
=0.1mA
f=1kHz, Rg=10k
-
1.0
10
dB
2001. 11. 30
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KTC4077
Revision No : 2
10
100
10k
1k
100
10
1k
10k
100k
COMMON EMITTER
V =6V
f=1kHz
CE
12
10
8
6
4
3
2
NF=1
dB
NF=1dB
2
3
4
6
8
10
12
C
g
NF - R , I
SIGNAL SOURCE RESISTANCE R (
)
g
COLLECTOR CURRENT I (
µA)
C
Ta=-25 C
Ta=25 C
Ta=100 C
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
0.3
10
50
30
100
1
FE
500
300
1k
COMMON EMITTER
100
V =6V
3
10
CE
30
C
400
h - I
FE
C
h PARAMETER
1
500
100
30
1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
h PARAMETER - V
CE
10
3
3
10
30
100
300
COMMON EMITTER
I =-1mA
f=270Hz
Ta=25 C
E
h
fe
ie
h
re
h
oe
h
(
xk
)
(
x10 )
(
x
µ )
-5
C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
0
ob
1
COLLECTOR OUTPUT CAPACITANCE
ob
CB
C (pF)
10
20
30
40
50
60
70
80
3
5
10
30
50
f=1MHz
I =0
Ta=25 C
E
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