1994. 3. 24
1/1
SEMICONDUCTOR
TECHNICAL DATA
KTC3204
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
HIGH CURRENT APPLICATION.
FEATURES
Complementary to KTA1272.
MAXIMUM RATING (Ta=25 )
1
2
3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. EMITTER
2. COLLECTOR
3. BASE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
35
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
800
mA
Emitter Current
I
E
160
mA
Collector Power Dissipation
P
C
400
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
30
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=1V, I
C
=100mA
100
-
320
h
FE
(2)
V
CE
=1V, I
C
=700mA
35
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=-20mA
-
-
0.5
V
Base-Emitter Voltage
V
BE
V
CE
=1V, I
C
=10mA
0.5
-
0.8
V
Transition Frequency
f
T
V
CE
=5V, I
C
=10mA
-
120
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
13
-
pF
Note : h
FE
(1) Classification 0:100 200, Y:160 320
ELECTRICAL CHARACTERISTICS (Ta=25 )
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