2003. 1. 15
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SEMICONDUCTOR
TECHNICAL DATA
KTC3200
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
LOW NOISE AUDIO AMPLIFIER APPLICATION.
FEATURES
The KTC3200 is a transistor for low frequency and low noise applications.
This device is designed to ower noise figure in the region of low signal
source impedance, and to lower the pulse noise.
This is recommended for the first stages of equalizer amplifiers.
Low Noise
: NF=4dB(Typ.), Rg=100 , V
CE
=6V, I
C
=100 A, f=1kHz
: NF=0.5dB(Typ.), Rg=1k , V
CE
=6V, I
C
=100 A, f=1kHz.
Low Pulse Noise : Low 1/f Noise.
High DC Current Gain : h
FE
=200 700.
High Breakdown Voltage : V
CEO
=120V .
Complementary to KTA1268.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification GR:200 400, BL:350 700
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
mA
Emitter Current
I
E
-100
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=120V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
120
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2mA
200
-
700
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
-
0.3
V
Base-Emitter Voltage
V
BE
V
CE
=6V, I
C
=2mA
-
0.65
-
V
Transition Frequency
f
T
V
CE
=6V, I
C
=1mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
3.0
-
pF
Noise Figure
NF
V
CE
=6V, I
C
=100 A, f=10Hz, Rg=10k
-
-
6.0
dB
V
CE
=6V, I
C
=100 A, f=1kHz, Rg=10k
-
-
2.0
V
CE
=6V, I
C
=100 A f=1kHz, Rg=100
-
4.0
-
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KTC3200
Revision No : 1
10
100k
10k
1k
100
10
100
1k
10k
C
g
NF - R , I
SIGNAL SOURCE RESISTANCE R (
)
g
COLLECTOR CURRENT I ( A)
C
COMMON EMITTER
CE
f=10Hz
V =6V
12
10
8
6
4
3
2
NF=1dB
NF=1dB
NF=1dB
NF=1dB
2
2
3
3
4
4
6
6
8
8
10
10
12
12
2
3
4
6
8
10
12
10
DC CURRENT GAIN h
FE
1k
300
100
1
0.1
COLLECTOR CURRENT I (mA)
C
h - I
FE
C
10
3
0.3
30
100
30
50
300
500
COMMON EMITTER
V =6V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
0
ob
1
COLLECTOR OUTPUT CAPACITANCE
ob
CB
C (pF)
10
20
30
40
50
60
70
80
3
5
10
f=1MHz
I =0
Ta=25 C
E
10
h PARAMETER
1
300
200
100
1
0.5
COLLECTOR-EMITTER VOLTAGE V (V)
CE
h PARAMETER - V
CE
3
5
10
30 50
3
5
30
50
COMMON EMITTER
I =-1mA
f=270Hz
Ta=25 C
E
h
fe
ie
h
(
xk)
(
x10 )
h
re
-5
(
xµ )
h
oe
100
COLLECTOR CURRENT I (
µA)
NF - R , I
g
SIGNAL SOURCE RESISTANCE R (
)
C
C
g
10
100
-100
-10
-1k
-10k
1k
10k
100k
EMITTER
COMMON
V =6V
f=1kHz
CE
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