1994. 3. 23
1/1
SEMICONDUCTOR
TECHNICAL DATA
KTC3198L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(2)=100(Typ.) at V
CE
=6V, I
C
=150mA
: h
FE
(I
C
=0.1mA)/h
FE
(I
C
=2mA)=0.95(Typ.).
Low Noise : NF=0.2dB(Typ.). f=(1kHz).
Complementary to KTA1266L. (O,Y,GR class)
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification O:70 140, Y:120 240, GR:200 400, BL:300~700
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Emitter Current
I
E
-150
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(1) (Note)
V
CE
=6V, I
C
=2mA
70
-
700
h
FE
(2)
V
CE
=6V, I
C
=150mA
25
100
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
-
0.1
0.25
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=100mA, I
B
=10mA
-
-
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1mA
80
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
2.0
3.0
pF
Base Intrinsic Resistance
rbb'
V
CB
=10V, I
E
=1mA, f=30MHz
-
50
-
Noise Figure
NF(1)
V
CE
=6V, I
C
=0.1mA, f=100Hz, Rg=10k
-
0.5
6.0
dB
NF(2)
V
CE
=6V, I
C
=0.1mA, f=1kHz, Rg=10k
-
0.2
3.0
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