1998. 6. 15
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1666
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
FEATURES
Low Saturation Voltage
: V
CE(sat)
=-0.5V(Max.) (I
C
=-1A)
High Speed Switching Time : t
stg
=1.0 S(Typ.)
P
C
=1 2W (Mounted on Ceramic Substrate)
Small Flat Package.
Complementary to KTC4379.
MAXIMUM RATING (Ta=25 )
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
1
2
3
2. COLLECTOR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F
F
D
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1 : Pulse width 300 S, Duty Cycle 2%
Note 2 : h
FE
(1) Classification 0:70 140, Y:120 240
P
C
* : KTA1666 mounted on ceramic substrate (250mm
2
x0.8t)
W
Type Name
h Rank
FE
Lot No.
Marking
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-50
-
-
V
DC Current Gain
h
FE
(1) (Note2)
V
CE
=-2V, I
C
=-0.5A (Note 1)
70
-
240
h
FE
(2)
V
CE
=-2V, I
C
=-1.5A (Note 1)
40
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-1A, I
B
=-0.05A (Note 1)
-
-
-0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-1A, I
B
=-0.05A (Note 1)
-
-
-1.2
V
Transition Frequency
f
T
V
CE
=-2V, I
C
=-0.5A
-
120
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
40
-
pF
Switching
Time
Turn-on Time
t
on
I
B1
30
B1
I
CC
V =-30V
I
B2
I
B2
20
µsec
-I =I =0.05A
1%
B1 B2
OUTPUT
DUTY CYCLE
INPUT
0
<
=
-
0.1
-
S
Storage Time
t
stg
-
1.0
-
Fall Time
t
f
-
0.1
-
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-2
A
Base Current
I
B
-0.4
A
Collector Power Dissipation
P
C
500
mW
P
C
*
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
1998. 6. 15
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KTA1666
Revision No : 2
CE
V (V)
COLLECTOR-EMITTER VOLTAGE
COLLECTOR CURRENT I (A)
C
C
CE
V - I
V - I
C
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER SATURATION
COLLECTOR-EMITTER VOLTAGE
V (V)
COLLECTOR CUIRRENT I (A)
-0.4
CE
0
C
0
V - I
CE
C
-0.4
-0.8
-1.2
-1.6
-2.0
-0.8
-1.2
-1.6
-0.4
COLLECTOR CUIRRENT I (A)
COLLECTOR-EMITTER VOLTAGE
0
0
-1.6
-1.2
-0.8
-0.4
V (V)
CE
-1.6
-0.8
-1.2
C
-2.0
V - I
CE
C
I =-5mA
B
-10
-2
0
-30
-40
COMMON EMITTER
Ta=25 C
I =
-3
mA
B
-5
-10
-20
-30
-40
-50
COMMON EMITTER
Ta=100 C
-0.4
0
0
-1.6
-1.2
-0.8
-0.4
COMMON EMITTER
-1.6
-0.8
-1.2
I =-5mA
B
-10
Ta=-55 C
-2.0
-30
-20
-4
0
-50
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
-10
-30
10
FE
-300
-100
C
h - I
FE
C
-1k
-3k
30
50
100
300
500
1k
COMMON EMITTER
V =-2V
CE
Ta=100 C
Ta=25 C
Ta=-55 C
CE(sat)
C
VOLTAGE V (V)
CE(sat)
-0.3
-1k
Ta=25 C
Ta=-55 C
-0.1
-0.05
-0.03
-0.01
-10
-30
-100
-300
-3k
COMMON EMITTER
Ta=100
C
-0.5
-1
I /I =20
C B
COLLECTOR CURRENT I (mA)
BASE-EMITTER SATURATION
VOLTAGE V (V)
-0.1
-0.3
-0.5
-10
-30
-10
-1
-3
-5
BE(sat)
Ta=100 C
-1k
Ta=-55 C
-100
-300
C
Ta=25 C
-3k
COMMON EMITTER
BE(sat)
V - I
I /I =20
C B
C
1998. 6. 15
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KTA1666
Revision No : 1
COLLECTOR CURRENT I (mA)
C
-1
-3
-1
-0.3
-0.1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
COLLECTOR CURRENT I (A)
0
-0.4
BASE-EMITTER VOLTAGE V (V)
BE
0
I - V
C
BE
C
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-0.8
-1.2
-1.6
-2.0
Ta=100 C
Ta=25
C
Ta=-55
C
-10
-30
-100
-3
-5
-10
-30
-50
-100
-300
-500
-1k
-3k
-5k
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
I MAX(PULSE)
I MAX(CONTI-
NUOUS)
C
C
DC
OPERATIO
N
1s
100mS
10mS 1m
S
V MAX
CEO
COMMON EMITTER
V =-2V
CE
COLLECTOR POWER DISSIPATION P (W)
C
0.2
20
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
40
60
80
100
120
140
160
0
0.4
0.6
0.8
1.0
1.2
1 MOUNTED ON CERAMIC
SUBSTRATE(250mm x0.8t)
2 Ta=25 C
2
1
2
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