DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
1
2
3
2. COLLECTOR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F
F
D
+
_
+
_
1994. 3. 21
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1001
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-35V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-8V, I
C
=0
-
-
-100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-20
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-1mA, I
C
=0
-8
-
-
V
DC Current Gain
h
FE
(1) (Note2)
V
CE
=-2V, I
C
=-0.5A
100
-
320
h
FE
(2)
V
CE
=-2V, I
C
=-3A
70
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-3A, I
B
=-75mA
-
-
-0.5
V
Base-Emitter Voltage
V
BE
V
CE
=-2V, I
C
=-3A
-
-
-1.5
V
Transition Frequency
f
T
V
CE
=-2V, I
C
=-0.5A
-
170
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
62
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-8
V
Collector Current
DC
I
C
-3
A
Pulse (Note1)
I
CP
-5
A
Base Current
I
B
-0.5
A
Collector Power
Dissipation
Ta=25
P
C
0.5
W
Tc=25
*
1
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note1 : Pulse Test : Pulse width=10ms(Max.)
Duty cycle=30%(Max.)
*Pc : KTA1001 mounted on ceramic substrate(250mm
2
x0.8t)
Note2 : h
FE
(1) Classification 0:100 200, Y:160 320
CAMERA STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
FEATURES
h
FE
=100 320 (V
CE
=-2V, I
C
=-0.5A).
h
FE
=70(Min.) (V
CE
=-2V, I
C
=-3A).
Low Collector Saturation Voltage.
: V
CE(sat)
=-0.5V(Max.) (I
C
=-3A, I
B
=-75mA).
High Power Dissipation.
: P
C
=1W(Tc=25 ), P
C
=0.5W(Ta=25 ).
MAXIMUM RATING (Ta=25 )
K
Type Name
h Rank
FE
Lot No.
Marking
1994. 3. 21
2/2
KTA1001
Revision No : 0
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
-0.8
C
0
COLLECTOR CURRENT I (A)
-1
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
-0.1
-0.03
C
COLLECTOR CURRENT I (A)
COLLECTOR POWER DISSPATION P (W)
C
0.2
20
0
AMBIENT TEMPERATURE Ta ( C)
a
C
P - T
CE
-0.01
COLLECTOR CURRENT I (A)
C
C
CE
V (sat) - I
30
DC CURRENT GAIN h
FE
-0.01
COLLECTOR CURRENT I (A)
C
C
FE
h - I
-1.6
-2.4
-3.2
-4.0
-2
-3
-4
COMMON EMITTER
Ta=25 C
I =-1mA
B
-2mA
-3mA
-5mA
-10mA
-20mA
-50mA
-100mA
VOLTAGE V (sat) (V)
COLLECTOR-EMITTER SATURATION
-0.03
-0.1
-0.3
-1
-3
-10
-0.01
-0.03
-0.05
-0.1
-0.3
-0.5
-1
COMMON EITTER
I /I =40
C B
Ta=100
C
Ta=25
C
Ta=-25 C
-0.03
-0.1
-0.3
-1
-3
-10
50
100
300
500
1k
2k
COMMON EMITTER
V =-1V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
40
60
80
100
120
140
160
0
0.4
0.6
0.8
1.0
1.2
MOUNTED ON CERAMIC
SUBSTRATE
(250mm x0.8t)
Ta=25 C
1
2
1
2
-0.3
-1
-3
-10
-30
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
-10
* SINGLE
NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
I MAX. (PULSED)
C
I MAX. (DC)
C
10ms
100ms
*
*
*
DC
O
PERA
TI
ON
2
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