2001. 11. 29
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SEMICONDUCTOR
TECHNICAL DATA
KRA307~KRA309
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors
Simplify Circuit Design
Reduce a Quantity of Parts and Manufacturing Process
High Packing Density.
DIM
MILLIMETERS
A
B
D
E
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42 0.10
N
0.10 MIN
+
_
+
_
+
_
+
_
+
_
TYPE NO.
R1(k )
R2(k )
KRA307
10
47
KRA308
22
47
KRA309
47
22
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA307 309
V
O
-50
V
Input Voltage
KRA307
V
I
-30, 6
V
KRA308
-40, 7
KRA309
-40, 15
Output Current
KRA307 309
I
O
-100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRA307
KRA308
KRA309
MARK
PH
PI
PJ
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON(+)
OUT
IN
Type Name
Marking