1996. 9. 5
1/5
SEMICONDUCTOR
TECHNICAL DATA
KRA221M~KRA226M
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH CURRENT SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Output Current :-800mA.
1
2
3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. EMITTER
2. COLLECTOR
3. BASE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
TYPE NO.
R1(k )
R2(k )
KRA221M
1
1
KRA222M
2.2
2.2
KRA223M
4.7
4.7
KRA224M
10
10
KRA225M
1
10
KRA226M
2.2
10
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA221M 226M
V
O
-50
V
Input Voltage
KRA221M
V
I
-10, 10
V
KRA222M
-12, 10
KRA223M
-20, 10
KRA224M
-30, 10
KRA225M
-10, 5
KRA226M
-12, 6
Output Current
KRA221M 226M
I
O
-800
mA
Power Dissipation
P
D
400
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
MAXIMUM RATING (Ta=25 )
R1
R2
COMMON(+)
OUT
IN
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