1998. 6. 15
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA107S~KRA109S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM
MILLIMETERS
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
TYPE NO.
R1(k )
R2(k )
KRA107S
10
47
KRA108S
22
47
KRA109S
47
22
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA107S 109S
V
O
-50
V
Input Voltage
KRA107S
V
I
-30, 6
V
KRA108S
-40, 7
KRA109S
-40, 15
Output Current
KRA107S 109S
I
O
-100
mA
Power Dissipation
P
D
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
MAXIMUM RATING (Ta=25 )
R1
R2
COMMON(+)
OUT
IN
TYPE
KRA107S
KRA108S
KRA109S
MARK
PH
PI
PJ
MARK SPEC
Type Name
Marking
Lot No.