FM RADIO BAND TUNING APPLICATION.
FEATURES
High Capacitance Ratio : C
1V
/C
5V
=5.0(Min.)
Excellent C-V Characteristics.
Variations of Capacitance Values is Little.
Small Package.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. ANODE 1
2. ANODE 2
3. CATHODE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
2
1
3
+
_
2002. 6. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV1470
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CLASSIFICATION OF CAPACITANCE RATIO GRADE
Grade
Type Name
Marking
Lot No.
S3
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=10 A
16
-
-
V
Reverse Current
I
R
V
R
=10V
-
-
50
nA
Capacitance
C
1V
V
R
=1V, f=1MHz
65.8
70
74.2
pF
C
2V
V
R
=2V, f=1MHz
-
43
-
C
3V
V
R
=3V, f=1MHz
-
24
-
C
4.5V
V
R
=4.5V, f=1MHz
12.0
13.5
14.8
C
5V
V
R
=5V, f=1MHz
-
12.5
-
Capacitance Ratio
K
C
1V
/C
5V
, f=1MHz
5.0
-
-
Series Resistance
r
S
V
R
=1.5V, f=100MHz
-
0.43
0.5
GRADE
CAPACITANCE (C
1V
)
UNIT
A
65.80 69.25
pF
B
68.27 71.72
C
70.74 74.20
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
16
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
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