1998. 6. 15
1/1
SEMICONDUCTOR
TECHNICAL DATA
KDS187
SILICON EPITAXIAL PLANAR DIODE
Revision No : 1
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : SOT-23.
Low Forward Voltag : V
F
=0.92V(Typ.).
Fast Reverse Recovery Time : t
rr
=1.6ns(Typ.).
Small Total Capacitance : C
T
=2.2pF(Typ.).
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. NC
2. CATHODE
3. ANODE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
2
1
3
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
Lot No.
D3
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.61
-
V
V
F(2)
I
F
=10mA
-
0.74
-
V
F(3)
I
F
=100mA
-
0.92
1.20
Reverse Current
I
R
V
R
=80V
-
-
0.5
A
Total Capacitance
C
T
V
R
=0, f=1MHz
-
2.2
4.0
pF
Reverse Recovery Time
t
rr
I
F
=10mA
-
1.6
4.0
nS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
85
V
Reverse Voltage
V
R
80
V
Maximum (Peak) Forward Current
I
FM
300
mA
Average Forward Current
I
O
100
mA
Surge Current (10ms)
I
FSM
2
A
Power Dissipation
P
D
150
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
PDF 
ZIP